JPS5925229A - Method for heating semiconductor substrate - Google Patents

Abstract

PURPOSE:To contrive formation of large diameter wafers as well as to automate the manufacture of wafers by a method wherein a wafer is placed in a metal processing container which has been brought to the degree of vacuum of 10<-2>Torr or less, and the above is heated up by microwaves through a microwave transmitting window. CONSTITUTION:A wafer 4 to be treated is placed in a load-lock chamber 2, and the chamber is evacuated to a vacuum state using a vacuum system V2. A gate valve G2 is opened, and the wafer 4 is carried into a heat treatment chamber 1 by a belt conveyor 5. After the valve G2 has been closed and the heat treatment chamber has been evacuated to the degree of 10<-2>Torr or below, microwaves are applied from a microwaveguide 7 through a transmitting window 6. As a result, the waver 4 itself is heated up and annealed by absorbing microwaves.

Description

[Detailed Description of the Invention] (a) Techniques of the Invention The present invention is directed to a semiconductor device (board (wafer)) that is repeatedly performed in a wafer process when manufacturing a semiconductor device.
The present invention relates to a heating method.

(i)) Conventional technology 1q: r +bn, c17° Semiconductor devices are manufactured using the so-called wafer process (Ku 1 Science and Technology - Tano 1) in which eight elements are formed on the surface of a silicon wafer. This wafer process is a process in which high-temperature heating is repeatedly performed17.In other words, a silicon dioxide (S-IO2) film is created on the surface of the wafer. oxidation treatment, activated VL heat treatment after introducing impurity ions, or impurity expansion 11 (treatment 11, etc.)
Wafer (semiconductor! ) It is necessary to heat the surface to about 100°C for about 100°C, and also to apply the resin film during patterning.
Baking is performed by heating the silicon wafer to ~200°C.

Conventionally, in most cases, these heating methods have been conducted using resistance heating methods in which electricity is added to the antibody to generate heat, and on rare occasions infrared heating has only been used for low temperature heating; It is repeatedly heated in a 7F air room or placed on a heater.

However, due to the development of semiconductors and the production of nails, the diameter of wafers has increased to 5 inches, and processing equipment that automatically processes wafers has become widely used, and large-diameter wafers are now being processed. Not only is the automatic processing equipment including the drive system becoming larger and the production cost is increasing, but the automatic 115. We are in a good position to be able to cope with the increase in size.

(C1 Oaki's To1 tree d light is written down and the wafer dog (-1 diameter and wafer so!] Wafer addition Hl) j, (method IJl (-1 diameter and wafer so!) It is something to sing.

+(]j 471j 471j Light generation purpose υ = 11, the wafer was placed in a vacuum 1i below 1O-2Tc Sho, and placed in a 1+'&N +1111 container, and exposed to the microwave through a microwave transmission window. It is possible to create a heating method in which the wafer is heated to a certain temperature by the waves.

(O) Loss of the invention h(1ΣExample I digit, - real/7(lJ, example), the present invention is explained as r+゛(: ljl[:r< 1Fig.(r↓ Impurity in the wafer After implanting ions, the impurities are removed from the heat treatment chamber 3J. There is one to be processed: i Nihar 4 is placed in the vacuum chamber 2 and j'
IJ is already in the vacuum system V1, 1 [Empty 1 has been evacuated +)], IJ chamber 1 which boundary gate Pulp 02 IC is opened, and wafer 4 is placed in heat treatment chamber 1. .I [Sent by bell 1-5.B/L'+5 is gold 11
S<if! ! ' is 9!斗し（*y'c You may also use other VC knee/bearings to send it in.) Next, gate pulp G2 is closed/After this, heat treatment 1 is 1O-2T.
When the product vacuum becomes below orr, the microwave iff is transmitted through the entire transmission window 6, and the microwave (for example, wavelength 245
(river Z) is applied. Then, the wafer 4, which is a dielectric material, absorbs the microwave, and the wafer itself is heated and annealed (heat treated). The microwave transmission window 6 is made of quartz (main material: lo).

) or ceramic (main A:, A month Δe203) or d, Pyrex glass, etc., which allows microwaves to pass through almost completely. The entire small heat treatment chamber is rust-free 61.
It is made of a metal container using a material such as M, and the anal conduit body is not heated. Currently, I have a microwave machine 500 VTL.
When 1[J is applied, it takes about 4 minutes to heat the wafer to about 1000° C., and FIG. 2 shows a graph of the relationship between the applied time and the wafer heating temperature.

In this way, the activated pulp is heat treated in the heat treatment chamber 1 at the new temperature for the required time. :Transferred to 3・\ru1.

- Apply wafer by microwave like J2N self;
ii'! Then, if Blessing or Descendance rA71 uses normal vl, 621, riff, (moon ('I) between J) can be twisted and processed one by one/...: Me automatic 71'< l This heating method can be said to be the most sophisticated heating method.Moreover, this - Microphone 1. Single-wave heating method d: Only the wafer is heated, so the thermal efficiency is good, the heating temperature can be easily controlled, and (the heating γ7# is also Compared to an electric furnace, the heat treatment equipment can be much easier to use, and the operator's exposure to hot air can also be reduced.

Kizu 11 Akira JL +=, l: l is also inside the processing room.
Air must be extracted to a high vacuum below O"Ton":
But then, 10-2'l"a, Shiri, 11'j
, d under pressure, the plasma generates pressure, and 1 (f
Yoso (sometimes pigeons are given, and during Ida's popularity, Kafushi (1)
, 1: Heat efficiency (1.9 times the entire heat treatment chamber heats up) efficiency is 41.1. i
This is to avoid that. In addition, heat treatment in vacuum can prevent surface oxidation and other defects, resulting in high quality (in an efficient manner).

In addition to the above heat treatment examples, chemical vapor growth (C'J ij
The present invention can also be applied to film formation using methods such as -C1. For example, in the reduced pressure growth method, the degree of vacuum is 10"l'or]4.), so there is no problem. Surface oxidation also causes oxygen to flow in, An S:i02 film can be produced at the same (,)-vacuum degree.It goes without saying that it can be used for other low-temperature heating.

(f゛) The effect of the invention is more acute than that of the present invention. Since it is a direct heating method with
There is an easy-to-use analysis system, and the effect that it can be especially applied to automated flow processes is great, and it is almost like a semi-dedicated system 1? This method is also useful for improving quality.

4. Drawing (D I?!1 jl sib+! Ming 1) Heat treatment apparatus 1 of an embodiment according to Fig. 1!! Cross-sectional view, Fig. 2 shows microwave application time and wafer heating time 1
This is a diagram of the relationship between In the figure, 1 is N) processing chamber, 2. a
tJ: load lock chamber, 4. is wafer, 5 is (Taku Bell l, 6&, l: J Naomado, 7Q', microphone rJi skin waveguide, v 1, V 2, V 3iJ: +'
4 air system, 02. G3 indicates Goo-1-pal).

Figure 1 21st river For Yomoguchi 8I (intermediate)

Claims (1)

[Claims] A method for heating a semiconductor substrate, which comprises placing a semiconductor nail plate in a metal processing container with a force of 10" Torr or less, and heating the semiconductor substrate (H) with microwaves through a microwave transmission window. .