JPS6468918A - Vapor growth device using plasma - Google Patents
Vapor growth device using plasmaInfo
- Publication number
- JPS6468918A JPS6468918A JP22573087A JP22573087A JPS6468918A JP S6468918 A JPS6468918 A JP S6468918A JP 22573087 A JP22573087 A JP 22573087A JP 22573087 A JP22573087 A JP 22573087A JP S6468918 A JPS6468918 A JP S6468918A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- temperature
- thermocouple
- susceptor
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To eliminate variation of property and thickness of a film adhering to a semiconductor substrate by providing a thermocouple with which the temperature of the semiconductor substrate on a suspector is directly measured and a circuit in which the temperature control of a heater is performed in accordance with the output of the thermocouple. CONSTITUTION:A thermocouple 2 which comes in contact with a semiconductor substrate 4 on a susceptor 3 and measures the temperature of the substrate 4 is liftingly provided for the susceptor 3 and connected to a temperature compensating circuit 8. The semiconductor substrate 4 is mounted on the rotating susceptor 3 and indirectly heated by a heater 5 on the upper part of an heat equalizing plate 7. At the time at which the semiconductor substrate is completed to transfer, a treating process is begun and degree of vacuum is stabilized, the rotation of the susceptor 3 is stopped for a time, the semiconductor substrate temperature detecting thermocouple 2 is brought into contact with the upper part of the semiconductor substrate 4, and the temperature of semiconductor substrate 4 on the susceptor 3 is detected. At this time the electromotive force of the thermocouple 2 is changed for that of a thermocouple 1 on the heat equalizing plate 7 in the temperature compensating circuit 8 and the output of the heater 5 is controlled by a temperature controller 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22573087A JPS6468918A (en) | 1987-09-09 | 1987-09-09 | Vapor growth device using plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22573087A JPS6468918A (en) | 1987-09-09 | 1987-09-09 | Vapor growth device using plasma |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6468918A true JPS6468918A (en) | 1989-03-15 |
Family
ID=16833924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22573087A Pending JPS6468918A (en) | 1987-09-09 | 1987-09-09 | Vapor growth device using plasma |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6468918A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5232509A (en) * | 1991-07-09 | 1993-08-03 | Korea Institute Of Science And Technology | Apparatus for producing low resistivity tungsten thin film comprising reaction temperature measuring thermocouples |
| JP2004335621A (en) * | 2003-05-02 | 2004-11-25 | Tokyo Electron Ltd | Heat treatment apparatus, temperature control method thereof and heat treatment system |
-
1987
- 1987-09-09 JP JP22573087A patent/JPS6468918A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5232509A (en) * | 1991-07-09 | 1993-08-03 | Korea Institute Of Science And Technology | Apparatus for producing low resistivity tungsten thin film comprising reaction temperature measuring thermocouples |
| JP2004335621A (en) * | 2003-05-02 | 2004-11-25 | Tokyo Electron Ltd | Heat treatment apparatus, temperature control method thereof and heat treatment system |
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