JP2004119707A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with a high yield by always carrying out a heat treatment under stable temperature control even if the state of the detection surface of a radiation thermometer changes. <P>SOLUTION: A substrate holding board 2 is heated with a heater 3 and subsequently a semiconductor 1 placed on a front surface of the substrate holding board 2 is heated. The temperature of the heater 3 is detected with a thermo-couple 11, while that of the semiconductor substrate 1 is detected in non-contact measurement of the substrate holding board 2 by means of the radiation thermometer 12. A difference in temperature ΔT between a temperature Tc in an initial state measured with the radiation thermometer 12 and a temperature Tc' after cleaning measured with the radiation thermometer 12 is calculated. By adding the difference in temperature ΔT to the reference value Tc for temperature compensation, stable control of temperature can be always performed with respect to the substrate holding board 2. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor device, which performs a film forming process such as thin film formation, impurity doping, and surface treatment on a substrate for a semiconductor device, and particularly to performing a heat treatment while controlling the temperature in a furnace of the semiconductor manufacturing device. And a method of manufacturing a semiconductor device for forming a film on a substrate.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, when a film forming process such as thin film formation, impurity doping, and surface treatment is performed on a semiconductor substrate (semiconductor wafer) by a semiconductor manufacturing device such as a diffusion device or a CVD device, the furnace temperature of the semiconductor manufacturing device is high. While maintaining the temperature at an appropriate temperature and performing heat treatment. Therefore, temperature control in the furnace is performed so as to be capable of compensating for a disturbance and to follow a change in the target temperature with high accuracy. Further, such a semiconductor manufacturing apparatus has a substrate holding means for stably holding or uniformly heating a semiconductor substrate, and heats a semiconductor substrate mounted thereon via the substrate holding means. The temperature control is performed while monitoring the temperature of the substrate holding means using a non-contact radiation thermometer, and a series of process processing is performed on the semiconductor substrate.
[0003]
[Problems to be solved by the invention]
However, a radiation thermometer that monitors the temperature of the substrate holding means, unlike a direct thermometer such as a thermocouple that directly contacts the part to be measured and measures the temperature, does not measure the heat energy radiated from the object to be measured. It is detected by contact and converted to a temperature value. Therefore, if the detection part of the radiation thermometer is dirty, the radiation heat energy cannot be detected efficiently, and as a result, an error occurs in the measured temperature, and the accurate temperature cannot be measured. As a result, the semiconductor substrate cannot be heat-treated at a desired temperature, and film formation such as thin film formation, impurity doping, and surface treatment of the semiconductor substrate can be performed stably and with high quality. Disappears. That is, if the detection surface of the radiation thermometer is dirty, it becomes impossible to perform the heat treatment by controlling the temperature at the target temperature, which causes a reduction in the product yield of the semiconductor substrate.
[0004]
The present invention has been made in view of such circumstances, and an object of the present invention is to always perform heat treatment by stable temperature control even when the state of a detection surface of a radiation thermometer changes. It is an object of the present invention to provide a method of manufacturing a semiconductor device capable of manufacturing a semiconductor device having a good product yield.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention includes a method of monitoring a temperature of a substrate holding plate (substrate holding plate) with a radiation thermometer while the substrate is placed on the substrate holding plate. A method of manufacturing a semiconductor device for performing a film forming process by heating to a desired process temperature, wherein a radiation thermometer in an initial state is provided when the temperature of a heating unit is stabilized at a predetermined temperature before a film forming process on a substrate. Monitoring the temperature of the substrate holding plate as an initial measured temperature Tc, and when the temperature of the heating means is stabilized at the predetermined temperature after the substrate processing, the radiation thermometer monitors the temperature of the substrate holding plate during the process. Monitoring as an hourly measured temperature Tc ′, calculating a temperature difference ΔT = Tc−Tc ′ between the process elapsed time measured temperature Tc ′ and the initial measured temperature Tc, and a substrate holding plate measured by the radiation thermometer. The measurement temperature, subjected to temperature correction by adding the temperature difference [Delta] T, characterized in that it comprises the step of controlling the supply power amount of the heating means.
[0006]
Note that the term "after the substrate processing in the above step" refers to, for example, after gas cleaning performed after the substrate processing. Before and after such gas cleaning, the state of the detection surface of the radiation thermometer changes, so that a temperature difference ΔT between the initial measurement temperature Tc and the measurement temperature Tc ′ during the process is remarkable. Therefore, if temperature correction is performed by adding the temperature difference ΔT to the currently measured temperature, even if the state of the detection surface of the radiation thermometer changes due to gas cleaning or the like, the measured temperature is always feedbacked as an accurate temperature. Therefore, the temperature control can be performed with extremely high accuracy.
[0007]
In other words, according to the semiconductor device manufacturing method of the present invention, even if it becomes impossible to accurately measure the furnace temperature or the temperature of the substrate holding plate due to a change in the surface state of the radiation thermometer or other aging, By correcting the temperature by the temperature difference before and after the temperature change of the radiation thermometer and controlling the temperature with the temperature controller, as a result, the radiation thermometer performs accurate temperature detection and performs degree control equivalent to the temperature controlled state be able to. Therefore, even after the process, the heat treatment can be performed with extremely stable temperature control, so that the product yield of the semiconductor device can be improved.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of a method for manufacturing a semiconductor device according to the present invention will be described in detail with reference to the drawings. In the following description, an embodiment in the case of manufacturing a substrate (for example, a semiconductor substrate) will be described.
FIG. 1 is a configuration diagram of a substrate processing chamber when a semiconductor substrate is transported in a semiconductor manufacturing apparatus. FIG. 2 is a configuration diagram of a substrate processing chamber during preheating in a semiconductor manufacturing apparatus. FIG. 3 is a configuration diagram of a substrate processing chamber during semiconductor substrate processing in a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus shown in FIGS. 1, 2 and 3 is a schematic configuration diagram of a thermal CVD thin film forming apparatus. FIG. 1 shows a state in which the on-off valve 9 is lowered (that is, the substrate insertion port 8 is opened) and the semiconductor substrate 1 is carried into the substrate processing chamber 50, and FIG. That is, FIG. 3 shows a state in which the semiconductor substrate 1 is pre-heated (with the substrate insertion port 8 closed), and FIG. 3 shows a state in which the on-off valve 9 is raised (ie, the substrate insertion port 8 is closed). 1 shows a state in which a film formation process is being performed.
[0009]
In FIG. 1, a semiconductor manufacturing apparatus (substrate processing apparatus) 30 is configured to be able to process semiconductor substrates 1 one by one. On one surface of the substrate processing apparatus 30, a substrate insertion port 8 for carrying the semiconductor substrate 1 into the substrate processing chamber 50 and an on-off valve 9 for opening and closing the substrate insertion port 8 are provided. Further, inside the substrate processing chamber 50, substrate support pins 4 made of quartz pins for supporting the loaded semiconductor substrate 1 in parallel with the surface of the substrate holding plate 2 are provided.
[0010]
Further, inside the substrate processing apparatus 30, a heater 3 serving as a heating unit for heating the semiconductor substrate 1 to a desired temperature, the semiconductor substrate 1 for forming a film, and the heat from the heater 3 are held. A heater unit 20 including the substrate holding plate (susceptor) 2 for making the semiconductor substrate 1 uniform and conducting the same to the semiconductor substrate 1 is provided. Further, the heater unit 20 is supported by the elevating mechanism 10 so that the heater unit 20 can be adjusted to different positions in multiple stages according to a state such as when the semiconductor substrate 1 is transported or when a film is formed. Further, a gas supply port 6 for supplying a desired gas species to the substrate processing chamber 50 at a desired gas flow rate and a desired gas ratio is provided at an upper portion of the substrate processing apparatus 30, and the gas is uniformly supplied to the processing surface of the semiconductor substrate 1. A gas distribution plate 5 for supplying is provided. Further, on both side surfaces of the substrate processing apparatus 30, exhaust ports 7 are provided for exhausting gas generated during the non-reaction and during the reaction process. Since the configuration is the same in FIGS. 2 and 3, the description is omitted.
[0011]
Next, a process of performing a film forming process on the semiconductor substrate 1 in the substrate processing apparatus having the above structure will be described with reference to FIGS. First, as shown in FIG. 1, the semiconductor substrate 1 is transferred to the substrate processing chamber 50 by a transfer mechanism provided in a substrate transfer chamber (not shown) which communicates with the outside through the substrate insertion port 8 of the substrate processing chamber 50, and The substrate 2 is placed on a substrate support pin 4 made of quartz so as to be parallel to the surface of the substrate 2 with a space therebetween. After the semiconductor substrate 1 is inserted into the substrate processing chamber 50 and placed on the substrate support pins 4, the substrate insertion port 8 is opened and closed by the on-off valve 9 to isolate the transfer chamber (not shown) from the substrate processing chamber 50. Closed.
[0012]
Next, as shown in FIG. 2, the substrate supporting pins 4 are lowered to bring the semiconductor substrate 1 close to the vicinity of the surface of the substrate holding plate 2, and the semiconductor substrate 1 is preheated. At this time, since the substrate insertion port 8 is closed by the on-off valve 9, the semiconductor substrate 1 is efficiently preheated in a short time.
[0013]
Further, as shown in FIG. 3, the heater unit 20 including the heater 3 and the substrate holding plate (susceptor) 2 and the substrate support pins 4 are lifted by the elevating mechanism 10 to move the semiconductor substrate 1 from the preheating position to the film forming position. To raise. When the heater unit 20 is raised, the distance between the semiconductor substrate 1 and the substrate holding plate 2 on the substrate support pins 4 is further reduced, and the semiconductor substrate 1 is held before the semiconductor substrate 1 reaches the position of the film forming process. It is placed on the plate 2 in close contact. Therefore, the semiconductor substrate 1 is heated by the conduction heat of the substrate holding plate 2 heated by the heater 3.
[0014]
The temperature of the semiconductor substrate 1 during the film forming process shown in FIG. 3 is controlled by controlling the temperature of the substrate holding plate 2 which is a direct heating body of the semiconductor substrate 1, thereby controlling the temperature of the heater 3 spatially separated from the semiconductor substrate 1. Temperature control is performed faster and more accurately than when temperature is controlled. Further, in order to uniformly form a film on the semiconductor substrate 1, the substrate holding plate 2 is rotated by a rotation mechanism (not shown). Therefore, a radiation thermometer (pyrometer) that can measure the temperature in a non-contact manner is used for the temperature monitor of the substrate holding plate 2.
[0015]
Next, as shown in FIG. 3, the gas introduced from the gas supply port 6 in the upper part of the substrate processing apparatus 30 is dispersed by the gas dispersion plate 5 and is evenly diffused on the processing surface of the heated semiconductor substrate 1. You. As a result, the surface layer of the semiconductor substrate 1 is uniformly subjected to film formation processing such as thin film formation, impurity doping, and surface treatment.
[0016]
Here, a method of detecting a temperature when the semiconductor substrate 1 is heat-treated will be described. FIG. 4 is a conceptual diagram of a temperature detecting portion in the semiconductor manufacturing apparatus at the time of processing the semiconductor substrate shown in FIG. As shown in FIG. 4, the substrate holding plate 2 is heated by the heater 3, and the semiconductor substrate 1 placed on the surface of the substrate holding plate 2 is further heated. At this time, the surface temperature of the heater 3 is detected by the plurality of thermocouples 11. The temperature of the semiconductor substrate 1 is detected by the radiation thermometer 12 measuring the temperature of the substrate holding plate 2 in a non-contact manner. The detected temperature information of the thermocouple 11 and the detected temperature information of the radiation thermometer 12 are fed back to a temperature controller of a cascade control loop system (not shown), and the temperature controller controls the amount of electric power supplied to the heater 3 so that the semiconductor substrate 1 Is performed.
[0017]
FIG. 5 is a configuration diagram of a temperature controller using a general cascade control loop system. Normally, in the substrate processing apparatus as shown in FIGS. 1 to 3, temperature control is performed by a temperature controller having a cascade control loop as shown in FIG. The cascade control loop includes a first adder 21 that outputs a deviation between the target temperature Y and a detected temperature from the radiation thermometer 12, and a PID (proportional, integral, and differential) according to the output level of the first adder 21. A) a first PID adjusting unit 22 that calculates and controls the detected temperature from the heater thermocouple 11 to a value to follow; a deviation between the output level of the first PID adjusting unit 22 and the detected temperature from the heater thermocouple 11 , And a second PID adjusting unit 24 that performs PID calculation according to the output level of the second adder 23 and controls the amount of power Z supplied to the heater 3. I have. By controlling the amount of electric power Z supplied to the heater 3 by the temperature controller based on the cascade control loop having such a configuration, the substrate holding plate 3 (that is, the semiconductor substrate 1) accurately follows the target temperature Y. 1 can be temperature controlled with high accuracy.
[0018]
After performing the film forming process on the semiconductor substrate 1 while performing the temperature control and the heat treatment in this manner, the heater unit 20 is again lowered to the transfer position as shown in FIG. When the heater unit 20 is lowered, the substrate support pins 4 push up the semiconductor substrate 1 again, and create a space between the semiconductor substrate 1 and the substrate holding plate 2 for transporting the semiconductor substrate 1. Then, the semiconductor substrate 1 is carried out from the substrate insertion opening 8 to a transfer chamber (not shown) on the left side of the figure by a transfer mechanism.
[0019]
By the way, in the temperature control by the temperature controller as shown in FIG. 5, when the temperature of the heater 3 for setting the semiconductor substrate 1 to a desired temperature is set to Ta, and the temperature is sufficiently stabilized while maintaining the heater 3 at the temperature Ta, The temperature of the substrate holding plate 2 is represented by Tb, and the measured temperature of the substrate holding plate 2 measured by the radiation thermometer 12 is represented by Tc. At this time, if the radiation thermometer 12 can accurately measure the temperature in an ideal state, the temperature Tb of the substrate holding plate 2 is equal to the measurement temperature Tc measured by the radiation thermometer 12, and Tb = Tc.
[0020]
However, the radiation thermometer 12 changes the surface state of the detection surface due to gas cleaning or the like during or after the processing of the semiconductor substrate 1, and the light receiving efficiency of the radiation energy received by the radiation thermometer 12 changes. Therefore, the parameter value for calculating the measured temperature Tc from the radiant energy changes. For this reason, the temperature measurement value monitored by the radiation thermometer 12 also changes, and as a result, the substrate holding plate 2 cannot be measured at an accurate temperature.
[0021]
Here, even when the surface state of the radiation thermometer 12 changes due to gas cleaning or the like, the heater 3 is maintained at the predetermined temperature Ta, and the temperature Tb ′ of the substrate holding plate 2 when the temperature is sufficiently stabilized is reproduced. That is, Tb = Tb 'always holds. However, when the surface state of the radiation thermometer 12 changes due to gas cleaning or the like, the measurement temperature Tc ′ monitored by the radiation thermometer 12 changes, and the substrate holding plate measured by the radiation thermometer 12 before gas cleaning. 2 is different from the measured temperature Tc. That is, Tc ≠ Tc '. Therefore, when the temperature controller as shown in FIG. 5 controls the temperature by feeding back the monitor temperature (measured temperature) Tc before the change of the surface state of the radiation thermometer 12, the error of the temperature difference of Tc−Tc ′ = ΔT is obtained. The temperature control is performed in a state where the error occurs. As a result, the semiconductor substrate 1 is heat-treated while the temperature difference of ΔT with respect to the target temperature Y is generated to form a film, so that the product yield of the semiconductor substrate 1 is reduced and a stable product quality level is maintained. Can not.
[0022]
Therefore, in the method of manufacturing a semiconductor device according to the present invention, if an error occurs in the detected temperature due to a change in the surface state of the radiation thermometer 12 due to cleaning during or after the processing of the semiconductor substrate 1, the error may occur before the cleaning. The temperature of the reference temperature of the substrate holding plate 2 is corrected by taking into account the error of the detected temperature after cleaning. By performing such a temperature correction, a heat treatment with high-precision temperature control can be realized, and the semiconductor substrate 1 with a good product yield can be manufactured. In other words, in the method of manufacturing a semiconductor device according to the present invention, an error in the measured temperature due to a change in the state of the radiation thermometer, which is a temperature control monitor, is detected by measuring a constant temperature, and is corrected based on the detected value. .
[0023]
More specifically, after cleaning and the like are performed in the process of processing the semiconductor substrate 1, the temperature of the heater 3 is maintained at a constant value to be stable. The temperature between the measured temperature Tc ′ of the substrate holding plate 2 measured by the radiation thermometer 12 at this time and the measured temperature Tc of the substrate holding plate 2 measured by the radiation thermometer 12 in an initial state before performing cleaning or the like. The difference, that is, Tc−Tc ′ = ΔT, is obtained. Then, by correcting the temperature corresponding to the temperature difference ΔT by the temperature controller, the radiation thermometer 12 is apparently the same as measuring the accurate temperature regardless of the contamination or the like.
[0024]
Referring to FIG. 5, the temperature difference ΔT between before and after the cleaning is added to the temperature T of the substrate holding plate 2 measured by the radiation thermometer 12 after the process, and the value of (ΔT + T) is set to the temperature controller. Is fed back to the first adder 21, the second PID adjusting unit 24 supplies the heater 3 with an electric energy Z equivalent to the case where the radiation thermometer 12 measures an accurate temperature before the process processing. it can. Therefore, even if the surface state of the radiation thermometer 12 changes due to the process (cleaning, etc.), the temperature controller operates the semiconductor holding plate 2 (that is, the semiconductor substrate) at the measurement temperature before the surface state of the radiation thermometer 12 changes. The temperature of 1) can be controlled. In order to obtain such a configuration, for example, a temperature correction unit 27 may be provided as shown in FIG. 7 and ΔT obtained by the temperature correction unit 27 may be added to the measurement result of the radiation thermometer 12.
[0025]
Next, the flow of automatic correction of the monitor temperature measured by the radiation thermometer 12, which is the operation of the temperature correction unit 27, will be described using a flowchart. FIG. 6 is a flowchart showing a flow of automatic correction of the monitor temperature before and after the radiation thermometer 12 changes state in the method of manufacturing a semiconductor device according to the present invention. First, conditions for automatic correction of the monitor temperature of the radiation thermometer 12 will be described. The temperature of the substrate holding plate 2 heated by the heater 3 is determined by the temperature of the heater 3. Further, if the temperature of the heater 3 is controlled to a constant value, the temperature of the substrate holding plate 2 is constant even if the monitor temperature of the radiation thermometer 12 changes. Furthermore, the heat treatment at the time of the film forming process of the semiconductor substrate 1 is performed by temperature control in which the monitor temperature detected by the radiation thermometer 12 having good response is fed back.
[0026]
The process flow will be described with reference to the flowchart of FIG. 6. First, at the start of the process of processing the semiconductor substrate 1, the temperature of the heater 3 is measured by the thermocouple 11 in step S1. At this time, the temperatures of the central portion, the intermediate portion, and the outer peripheral portion of the heater 3 are measured, and the measured temperatures are Thc1, Thm1, and Thol. Further, the temperature of the substrate holding plate 2 is measured by a radiation thermometer 12 in a non-contact manner. At this time, the temperatures of the central portion, the intermediate portion, and the outer peripheral portion of the substrate holding plate 2 are measured, and the measured temperatures are Tpc, Tpm, and Tpo.
[0027]
Next, in step S2, when the surface state of the radiation thermometer 12 changes due to an event such as cleaning during or after the process, the temperature of the heater 3 is measured by the thermocouple 11 in step S3. No temperature change of 3. That is, the temperatures at the center, the middle, and the outer periphery of the heater 3 are Thc1, Thm1, and Th1, respectively, which are the same as the previously measured values. Further, the temperature of the substrate holding plate 2 is measured by a radiation thermometer 12 in a non-contact manner. At this time, since the state of the detection surface of the radiation thermometer 12 has changed, the measurement temperature of the substrate holding plate 2 changes, and the measurement temperatures of the central portion, the intermediate portion, and the outer peripheral portion of the substrate holding plate 2 are Tpc1. , Tpm1, and Tpo1.
[0028]
Then, in step S4, in order to control the heater 3 to the same temperature as before the event occurrence, the radiation thermometer correction recipe is automatically operated, and the measured temperature of the radiation thermometer 12 before and after the event occurrence is measured. Calculate the temperature difference. Then, in step S5, the central part: ΔTc = Tpc1-Tpc, the middle part: ΔTm = Tpm1-Tpm, and the outer peripheral part: ΔTo = Tpo1-Tpo are obtained as the temperature difference between the measured temperatures before and after the occurrence of the event of the radiation thermometer 12. These temperature differences ΔTc / ΔTm / ΔTo are used as correction values for temperature control.
[0029]
Next, in step S6, the current (that is, after the occurrence of the event) measured value of the radiation thermometer 12 is corrected using the correction value ΔTc / ΔTm / ΔTo of the radiation thermometer 12 obtained earlier. That is, the current measurement value of the radiation thermometer 12 is a value obtained by adding (or subtracting) the correction value calculated in step S5 to the reference temperature measured initially, and the central part is: Tpc ′ = Tpc + ΔTc; Part: Tpm ′ = Tpm + ΔTm, outer peripheral part: Tpo ′ = Tpo + ΔTo. Then, based on the corrected measurement values Tpc '/ Tpm' / Tpo 'after such correction, the temperature controller controls the electric energy Z of the heater 3 to perform temperature control. Thereby, the substrate holding plate 2 (that is, the semiconductor substrate 1) is controlled to the same temperature as before the event occurred. Such a temperature correction is repeatedly performed during the processing of the semiconductor substrate 1.
[0030]
As described above, even if the detection surface of the radiation thermometer 12 becomes dirty or the state changes, the temperature is controlled by correcting the error of the measurement temperature of the radiation thermometer with respect to the reference temperature measured initially. Regardless of the magnitude of the error in the measured temperature of the radiation thermometer 12, temperature control can always be performed based on the temperature accurately.
[0031]
The embodiment described above is an example for describing the present invention, and the present invention is not limited to the above embodiment, and various modifications are possible within the scope of the invention. In the above-described embodiment, an example has been described in which temperature correction is performed for each event such as cleaning after the semiconductor substrate is processed. However, the present invention is not limited to this. The temperature of the radiation thermometer 12 may be corrected by the above method.
[0032]
【The invention's effect】
As described above, according to the present invention, in a semiconductor manufacturing apparatus (substrate processing apparatus) that performs temperature control using a radiation thermometer, the inside of the furnace is changed due to a change in the surface state of the radiation thermometer or other aging. Even if it becomes impossible to accurately measure the temperature or the temperature of the board holding plate, the temperature difference is corrected for the reference temperature by the temperature difference before and after the state change of the radiation thermometer, and the temperature is controlled by the temperature controller. In addition, the temperature control can be performed in a state equivalent to a state in which the radiation thermometer controls the temperature by accurate temperature detection. Therefore, by using such a temperature correction method, temperature control can be performed with good reproducibility before and after cleaning of the semiconductor manufacturing apparatus, so that the product yield of semiconductor substrates can be improved.
[Brief description of the drawings]
FIG. 1 is a configuration diagram of a substrate processing chamber when a semiconductor substrate is transported in a semiconductor manufacturing apparatus (substrate processing apparatus).
FIG. 2 is a configuration diagram of a substrate processing chamber during preheating in a semiconductor manufacturing apparatus (substrate processing apparatus).
FIG. 3 is a configuration diagram of a substrate processing chamber during semiconductor substrate processing in a semiconductor manufacturing apparatus (substrate processing apparatus).
FIG. 4 is a conceptual diagram of a temperature detecting portion in the semiconductor manufacturing apparatus at the time of processing the semiconductor substrate shown in FIG. 3;
FIG. 5 is a configuration diagram of a temperature controller based on a cascade control loop system.
FIG. 6 is a flowchart showing a flow of automatic correction of a monitor temperature before and after a radiation thermometer changes state in the method of manufacturing a semiconductor device according to the present invention.
FIG. 7 is a configuration diagram illustrating an example of a temperature controller according to the present invention.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 semiconductor substrate, 2 substrate holding plate, 3 heater, 4 substrate support pins, 5 gas dispersion plate, 6 gas supply port, 7 exhaust port, 8 substrate insertion port, 9 on / off valve, 10 elevating mechanism, 11 thermocouple, 12 radiation Thermometer, 20 heater unit, 21 first adder, 22 first PID adjuster, 23 second adder, 24 second PID adjuster, 30 substrate processing apparatus, 50 substrate processing chamber.

Claims (1)

A method for manufacturing a semiconductor device in which a substrate is placed on a substrate holding plate, and the substrate is heated to a desired processing temperature while a temperature of the substrate holding plate is monitored by a radiation thermometer to form a film. ,
A step of monitoring the temperature of the substrate holding plate as an initial measurement temperature Tc by an emission thermometer in an initial state when the temperature of the heating unit is kept at a predetermined temperature and stabilized before the film forming process on the substrate;
When the temperature of the heating means is stabilized at the predetermined temperature after the processing of the substrate and stabilized, the radiation thermometer monitors the temperature of the substrate holding plate as a process elapsed measurement temperature Tc ′,
Calculating a temperature difference ΔT = Tc−Tc ′ between the process elapsed measurement temperature Tc ′ and the initial measurement temperature Tc;
A step of performing a temperature correction by adding the temperature difference ΔT to a measured temperature of the substrate holding plate measured by the radiation thermometer, and controlling a power supply amount of the heating unit;
A method for manufacturing a semiconductor device, comprising:

Images