JPH0529232A - Normal pressure vapor deposition device - Google Patents

Abstract

PURPOSE:To specify the quality of a vapor deposited film by a method wherein the surface temperatures of semiconductor wafers are measured to control the heating temperatures of heaters for maintaining a specific temperature of the semiconductor wafers. CONSTITUTION:The infrared ray temperature measuring instrument 7 for measuring the surface temperature of semiconductor wafers 1 mounted on carrier plates 2 are arranged at least several positions in a reaction furnace 6 so that the heating temperatures of a preheater 3 and a main heater 4 provided beneath the carrier plates 2 may be controlled by the measured surface temperatures of the semiconductor wafers 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an atmospheric pressure vapor deposition apparatus for vapor-depositing a film on a surface of a semiconductor substrate according to a source gas.

[0002]

2. Description of the Related Art In manufacturing a semiconductor device, an atmospheric pressure vapor phase growth apparatus is used in many processes such as formation of a surface protective film and an interlayer insulating film.

FIG. 2 is a schematic sectional view showing an example of a conventional atmospheric pressure vapor phase growth apparatus.

As shown in FIG. 2, the semiconductor substrate 1 is carried on the carrier plate 2 while being heated by the pre-heater 3 and the main heater 4, and is sequentially conveyed into the reaction furnace 6 in a conveyor system to be installed in the reaction furnace 6. A raw material gas is blown onto the surface of the semiconductor wafer 1 from the raw material gas supply port 5 to form a film corresponding to the raw material gas, for example, a surface protective film or an interlayer insulating film.

[0005]

In the conventional atmospheric pressure vapor phase growth apparatus described above, the surface temperature of the semiconductor wafer is adjusted only by keeping the temperatures of the preheater and the main heater constant. There was a problem that the temperature could not be kept constant every time and a film of constant quality could not be formed.

[0006]

The atmospheric pressure vapor phase growth apparatus of the present invention comprises a carrier plate on which a semiconductor wafer is mounted and sequentially carried into a reaction furnace, and a temperature lower than the carrier plate for controlling the temperature of the semiconductor wafer. And an infrared temperature measuring device for measuring and controlling the heating temperature of the heater.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.

FIG. 1 is a schematic sectional view showing an embodiment of the present invention.

As shown in FIG. 1, a carrier plate 2 on which a semiconductor wafer 1 is mounted and sequentially carried into a reaction furnace 6 in a conveyor manner, and a preheater 3 provided below the carrier plate 2 to preheat the semiconductor wafer 1. A main heater 4 provided in the lower part of the carrier plate 2 in the reaction furnace 6 for heating the semiconductor wafer 1, and a semiconductor after the preheating and in the reaction furnace 6 provided in a dispersed manner at several places outside the reaction furnace 6 and inside the reaction furnace 6. An infrared temperature measuring device 7 for measuring the temperature of the wafer 1 and a source gas supply port 5 provided in the reaction furnace 6 are provided, and the infrared temperature measuring device 7 measures the surface temperature of the semiconductor wafer 1.
While controlling the temperatures of the preheater 3 and the main heater 4 to keep the surface temperature of the semiconductor wafer 1 in the reaction furnace 6 at a constant temperature, the raw material gas is blown from the raw material gas supply port 5 onto the surface of the semiconductor wafer 1 to form a film. Form.

[0010]

As described above, the present invention has the effect of keeping the surface temperature of a semiconductor wafer constant and making the reaction conditions the same so that a vapor phase growth film of the same quality can be formed every time.

[Brief description of drawings]

FIG. 1 is a schematic sectional view showing an embodiment of the present invention.

FIG. 2 is a schematic sectional view showing an example of a conventional atmospheric pressure vapor phase growth apparatus.

[Explanation of symbols]

 1 Semiconductor Wafer 2 Transfer Plate 3 Preheater 4 Main Heater 5 Raw Material Gas Supply Port 6 Reactor 7 Infrared Temperature Measuring Instrument

Claims (1)

Claim: What is claimed is: 1. A carrier plate for mounting a semiconductor wafer and sequentially carrying the wafer into the reaction furnace, a heater provided below the carrier plate for heating the semiconductor wafer, and at least the reactor. An atmospheric pressure vapor phase growth apparatus, which is provided in the inside of the apparatus, for measuring the temperature of the semiconductor wafer and controlling the heating temperature of the heater.