JPH0397222A - Sheet type cvd equipment - Google Patents
Sheet type cvd equipmentInfo
- Publication number
- JPH0397222A JPH0397222A JP23641889A JP23641889A JPH0397222A JP H0397222 A JPH0397222 A JP H0397222A JP 23641889 A JP23641889 A JP 23641889A JP 23641889 A JP23641889 A JP 23641889A JP H0397222 A JPH0397222 A JP H0397222A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- wafer
- susceptor
- reaction chamber
- heater cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011261 inert gas Substances 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 239000012495 reaction gas Substances 0.000 abstract description 7
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000010408 film Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体薄膜または、絶縁保護膜を形或する枚
葉式のコールドウォール型，高温熱ＣＶＤ装置等の枚葉
式ＣＶＤ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a single-wafer type CVD apparatus, such as a single-wafer type cold wall type and high temperature thermal CVD apparatus, which forms a semiconductor thin film or an insulating protective film.
従来の減圧型枚葉式ＣＶＤ装置には第２図，第３図示の
ような装置がある。第２図示の従来装置は反応室１内で
サセプタ５を載置台８上に載置し、このサセプタ５上に
ウェーハ４を載せ、反応室１の底部を構或する石英板９
の下面にハロゲンランプ１０を並べて設置してなる。１
１ ． １２はそれぞれ反応ガス導入口及び排気口であ
る。Conventional reduced-pressure single-wafer CVD apparatuses include those shown in FIGS. 2 and 3. In the conventional apparatus shown in FIG. 2, a susceptor 5 is placed on a mounting table 8 in a reaction chamber 1, a wafer 4 is placed on the susceptor 5, and a quartz plate 9 constituting the bottom of the reaction chamber 1 is placed on the susceptor 5.
Halogen lamps 10 are arranged and installed on the bottom surface of the lamp. 1
1. 12 are a reaction gas inlet and an exhaust port, respectively.
第３図示の従来装置は反応室ｌ内でシースヒータ１３壱
支持し、このシースヒータ１３上にウェーハ４を載置し
てなる。ｌ４はシースヒータｌ３に給電するための電極
、■５はシースヒータ１３への電力制御を行うための温
度検出用の熱電対で、熱電対１５により検出した温度信
号によりシースヒータ１３が所定温度になるよう電力制
御することになる。In the conventional apparatus shown in FIG. 3, a sheath heater 13 is supported within a reaction chamber 1, and a wafer 4 is placed on this sheath heater 13. 14 is an electrode for supplying power to the sheath heater 13, and 5 is a temperature detection thermocouple for controlling the power to the sheath heater 13. The temperature signal detected by the thermocouple 15 is used to control the power to the sheath heater 13 to a predetermined temperature. It will be controlled.
第２図示の従来装置にあっては、ランプ光透過用の石英
板９にＣＶＤ膜が付着し、ウェーハ４の温度制御が困難
であるばかりでなく、高温（７００℃以上）の均一加熱
ができない等の課題がある。In the conventional apparatus shown in FIG. 2, a CVD film adheres to the quartz plate 9 for transmitting lamp light, which not only makes it difficult to control the temperature of the wafer 4, but also makes it impossible to uniformly heat the wafer 4 at a high temperature (700° C. or higher). There are other issues.
また第３図示の従来装置にあっては、シースヒータ１３
を使用しているため５００℃程度までの加熱しかできな
いという課題がある。Further, in the conventional device shown in FIG. 3, the sheath heater 13
There is a problem in that it can only be heated up to about 500°C.
本発明装置は上記の課題を解決するため、第１図示のよ
うに反応室１内にヒータカパー２を設け、このヒータカ
パー２内に渦巻状のヒータ３を設置し、当該ヒータカバ
ー２上に、ウェーハ４を間接加熱するサセプタ５を載置
してなる構或としたものである。In order to solve the above-mentioned problems, the apparatus of the present invention provides a heater cover 2 in a reaction chamber 1 as shown in the first diagram, a spiral heater 3 is installed in this heater cover 2, and a wafer is placed on the heater cover 2. The structure is such that a susceptor 5 for indirectly heating the susceptor 4 is placed thereon.
このような構或とすることによりヒータ３室と反応室ｌ
がヒータカバー２により仕切られることになり、ヒータ
３からウェーハ４が汚染されることはない。ヒータ３は
サセプタ５のみを加熱し、熱伝導でウェーハ４が加熱さ
れることになり、コールドウォール型反応室が構或され
ることになる。With this structure, three heater chambers and one reaction chamber can be used.
is partitioned off by the heater cover 2, so that the wafer 4 will not be contaminated by the heater 3. The heater 3 heats only the susceptor 5, and the wafer 4 is heated by thermal conduction, thus creating a cold wall type reaction chamber.
ヒータ３室と反応室１をシールするシール材１６は反応
室１の室壁内に収められるため、反応室１内を超高真空
にすることができる。ヒータ３は真空中または不活性ガ
ス中に設置できる構造であるため１２００℃程度の高温
までの加熱が可能となる。Since the sealing material 16 that seals the heater chamber 3 and the reaction chamber 1 is housed within the chamber wall of the reaction chamber 1, the inside of the reaction chamber 1 can be made into an ultra-high vacuum. Since the heater 3 has a structure that can be installed in a vacuum or an inert gas, it is possible to heat up to a high temperature of about 1200°C.
以下図面によって本発明の実施例を説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明装置の一実施例の構戊を示す簡略縦断面
図で、ｌは反応室、１１ ． １２はそれぞれ反応ガス
導入口及び排気口である。２は反応室１の底面に○リン
グｉ６を介して取付けられた石英ヒータカバーで、中心
部に不活性ガスのガス導入路１６が設けられている。FIG. 1 is a simplified vertical cross-sectional view showing the structure of an embodiment of the apparatus of the present invention, where l is a reaction chamber, 11. 12 are a reaction gas inlet and an exhaust port, respectively. 2 is a quartz heater cover attached to the bottom of the reaction chamber 1 via a ring i6, and a gas introduction path 16 for inert gas is provided in the center.
この石英ヒータカバー２内の上部にはヒータケース１７
が支持材１８により支持されており、このヒータケース
１７上には厚さ数ミリの渦巻状の平板形カーボンヒータ
３が設置されている。石英ヒータカパー２上には支持部
１９によりウェーハ４を間接加熱するサセプタ５が設け
られ、このサセプタ５上にはウェーハ４が載置されてお
り、サセプタ５と石英ヒータカパー２との間には不活性
ガス流通部７が形或されている。A heater case 17 is located in the upper part of this quartz heater cover 2.
is supported by a support member 18, and a spiral plate-shaped carbon heater 3 with a thickness of several millimeters is installed on this heater case 17. A susceptor 5 is provided on the quartz heater cover 2 to indirectly heat the wafer 4 using a support part 19. The wafer 4 is placed on the susceptor 5. A gas flow section 7 is formed.
渦巻状の薄板形カーボンヒータ３は２ゾーン以上、本実
施例では内側，中心部及び外側の３ゾーンに電気的に分
割され、各ゾーンは独立に電力制御される。２０は石英
ヒータカパー２内を排気する排気口である。The spiral thin plate carbon heater 3 is electrically divided into two or more zones, in this embodiment three zones: inner, central, and outer, and each zone is electrically controlled independently. 20 is an exhaust port for exhausting the inside of the quartz heater cover 2.
上記の構或において、反応室１内とヒータカパー２内は
それぞれ独立した真空排気系により排気される。反応ガ
ス導入口Ｉ１より反応ガスを反応室１内に導入し排気口
１２より排気する一方、ガス導入路６より不活性ガスを
導入し、ヒータカパー２とサセプタ５間の不活性ガス流
通路７を経て流通させる。In the above structure, the inside of the reaction chamber 1 and the inside of the heater cover 2 are evacuated by independent vacuum exhaust systems. A reaction gas is introduced into the reaction chamber 1 through the reaction gas inlet I1 and exhausted through the exhaust port 12, while an inert gas is introduced through the gas introduction path 6 to open the inert gas flow path 7 between the heater cover 2 and the susceptor 5. After that, it is distributed.
これと同時にヒータ３間の３ゾーンにそれぞれ電極１４
より電力を供給してヒータ３の各ゾーンを加熱し、これ
によってサセプタ５が加熱され、ウ工−ハ４が加熱され
てウェーハ４上にＣＶＤ膜が生或される。この場合、不
活性ガス流通部７に不活性ガスが流通しているので、石
英ヒータカバー２の上部にＣＶＤ膜が付着することはな
く、温度制御性が向上することになる。また、渦巻状の
薄板形カーボンヒータ３の３ゾーンはそれぞれ独立して
電力制御されるので、ウェーハ４の面内温度分布を均一
にでき、均一なＣＶＤ膜をウェーハ４上に生或すること
ができる。At the same time, electrodes 14 are placed in each of the three zones between the heaters 3.
Electric power is supplied to heat each zone of the heater 3, thereby heating the susceptor 5, heating the wafer 4, and forming a CVD film on the wafer 4. In this case, since the inert gas is flowing through the inert gas flow section 7, the CVD film will not adhere to the upper part of the quartz heater cover 2, and temperature controllability will be improved. In addition, since the three zones of the spiral thin plate carbon heater 3 are each independently controlled in power, the in-plane temperature distribution of the wafer 4 can be made uniform, and a uniform CVD film can be formed on the wafer 4. can.
上述のように本発明によれば反応室１内にヒータカバー
２を設け、このヒータカパー２内に渦巻状のヒータ３を
設置し、当該ヒータカバー２上に、ウェーハ４を間接加
熱するサセプタ５を載置してなるので、■．ヒータ３室
と反応室１がヒータカバー２により仕切られているため
、ヒータ３からウェーハ４が汚染されることはない。■
．ヒータ３は、サセプタ５のみを加熱し、熱伝導でウェ
ーハ４が加熱されることになるため、コールドウォール
型反応室を構或することができる。■．ヒータ３室と反
応室■間をシールするシール材１６は、反応室１の室壁
内に収納されるため、反応室１内を超高真空にすること
ができる。■．ヒータ３は不活性ガス中または真空中に
設置できる構造であるため、１２００℃程度の高温まで
加熱することができる。■．サセプタ５とヒータカパー
２を不活性ガスによりパージできるため、カバー２上部
にＣＶＤ膜が付着せず、温度制御性を向上することがで
きる。As described above, according to the present invention, the heater cover 2 is provided in the reaction chamber 1, the spiral heater 3 is installed in the heater cover 2, and the susceptor 5 for indirectly heating the wafer 4 is placed on the heater cover 2. ■. Since the heater 3 chamber and the reaction chamber 1 are partitioned by the heater cover 2, the wafer 4 is not contaminated by the heater 3. ■
．． Since the heater 3 heats only the susceptor 5 and the wafer 4 is heated by thermal conduction, a cold wall type reaction chamber can be constructed. ■． Since the sealing material 16 for sealing between the heater chamber 3 and the reaction chamber 1 is housed within the wall of the reaction chamber 1, the inside of the reaction chamber 1 can be made into an ultra-high vacuum. ■． Since the heater 3 has a structure that can be installed in an inert gas or a vacuum, it can heat up to a high temperature of about 1200°C. ■． Since the susceptor 5 and the heater cover 2 can be purged with an inert gas, no CVD film is attached to the upper part of the cover 2, and temperature controllability can be improved.
第１図は本発明装置の一実施例の構戊を示す簡略縦断面
図、第２図及び第３図はそれぞれ従来装置の構或を示す
簡略縦断面図である。
１・・・・・・反応室、２・・・・・・（石英）ヒータ
カパー３・・・・・・渦巻状の（薄板形カーボン）ヒー
タ、４・・・・・・ウェーハ、５・・・・・・サセプタ
、６・・・・・・ガス導入路、７・・・・・・不活性ガ
ス流通部、８・・・・・・載置台、９・・・・・・石英
板、１０・・・・・・ハロゲンランプ、１１・・・・・
・反応ガス導入口、１２・・・・・・排気口、ｌ３・・
・・・・シースヒータ、１４・・・・・・電極、１５・
・・・・・温度検出用の熱電対、１６・・・・・・シー
ル材（○リンク）、ｌ７・・・・・・ヒータケース、１
８・・・・・・．支持材、１９・・・・・・支持部、２
０・・・・・・排気口。
算１回FIG. 1 is a simplified longitudinal cross-sectional view showing the structure of an embodiment of the apparatus of the present invention, and FIGS. 2 and 3 are simplified longitudinal cross-sectional views showing the structure of a conventional apparatus, respectively. 1... Reaction chamber, 2... (Quartz) heater cover 3... Spiral shaped (thin plate carbon) heater, 4... Wafer, 5... ... Susceptor, 6 ... Gas introduction path, 7 ... Inert gas distribution section, 8 ... Placement table, 9 ... Quartz plate, 10...Halogen lamp, 11...
・Reaction gas inlet, 12...exhaust port, l3...
... Sheath heater, 14 ... Electrode, 15.
...Thermocouple for temperature detection, 16 ... Sealing material (○ link), l7 ... Heater case, 1
8・・・・・・・・・Supporting material, 19...Supporting part, 2
0...Exhaust port. Arithmetic once
Claims (3)
のヒータカバー（２）内に渦巻状のヒータ（３）を設置
し、当該ヒータカバー（２）上に、ウェーハ（４）を間
接加熱するサセプタ（５）を載置してなる枚葉式ＣＶＤ
装置。(1) A heater cover (2) is provided in the reaction chamber (1), a spiral heater (3) is installed in this heater cover (2), and a wafer (4) is placed on the heater cover (2). Single wafer type CVD with a susceptor (5) that indirectly heats
Device.
するガス導入路（６）を設け、サセプタ（５）とヒータ
カバー（２）との間に不活性ガス流通部（７）を形成し
てなる請求項第１項記載の枚葉式ＣＶＤ装置。(2) A gas introduction path (6) for introducing an inert gas is provided in the center of the heater cover (2), and an inert gas flow section (7) is provided between the susceptor (5) and the heater cover (2). 2. A single-wafer CVD apparatus according to claim 1.
各ゾーンの電力制御を行うようにした請求項第１項、第
２項のいずれかに記載の枚葉式ＣＶＤ装置。(3) Divide the spiral heater (3) into two or more zones,
3. The single-wafer CVD apparatus according to claim 1, wherein power control is performed for each zone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23641889A JPH0397222A (en) | 1989-09-11 | 1989-09-11 | Sheet type cvd equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23641889A JPH0397222A (en) | 1989-09-11 | 1989-09-11 | Sheet type cvd equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0397222A true JPH0397222A (en) | 1991-04-23 |
Family
ID=17000460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23641889A Pending JPH0397222A (en) | 1989-09-11 | 1989-09-11 | Sheet type cvd equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0397222A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5958140A (en) * | 1995-07-27 | 1999-09-28 | Tokyo Electron Limited | One-by-one type heat-processing apparatus |
| KR100707907B1 (en) * | 2005-08-08 | 2007-04-18 | 홍기봉 | Advertising device combined with decoration function |
| US8226014B2 (en) | 2005-08-19 | 2012-07-24 | Giesecke & Devrient Gmbh | Card-shaped data carrier |
-
1989
- 1989-09-11 JP JP23641889A patent/JPH0397222A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5958140A (en) * | 1995-07-27 | 1999-09-28 | Tokyo Electron Limited | One-by-one type heat-processing apparatus |
| KR100707907B1 (en) * | 2005-08-08 | 2007-04-18 | 홍기봉 | Advertising device combined with decoration function |
| US8226014B2 (en) | 2005-08-19 | 2012-07-24 | Giesecke & Devrient Gmbh | Card-shaped data carrier |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5892886A (en) | Apparatus for uniform gas and radiant heat dispersion for solid state fabrication processes | |
| KR101046043B1 (en) | Furnace multi-zone heater | |
| JPH03108323A (en) | Heating method for heater assembly and substrate | |
| KR19980018624A (en) | Chemical vapor deposition, plasma enhanced chemical vapor deposition or method and apparatus for treating exhaust gas from plasma etch reactor | |
| JPS63108712A (en) | Method and apparatus for heating semiconductor substrate and for inducing reaction | |
| US6007633A (en) | Single-substrate-processing apparatus in semiconductor processing system | |
| JPH0397222A (en) | Sheet type cvd equipment | |
| JP2579809Y2 (en) | Single wafer CVD system | |
| JPH0930893A (en) | Vapor growth device | |
| JP3641193B2 (en) | Vertical heat treatment apparatus, heat treatment method, and heat insulation unit | |
| JPS63270471A (en) | Plasma cvd device | |
| JPH09306860A (en) | Heat treating furnace | |
| JPH0362923A (en) | Electrode structure for plasma cvd apparatus | |
| JPH08148480A (en) | Semiconductor manufacturing device and method | |
| JPH11147787A (en) | Epitaxial growth furnace | |
| JPH01179309A (en) | Heating | |
| JPH0736386B2 (en) | Vapor phase growth equipment | |
| JPH029446B2 (en) | ||
| TW202405228A (en) | Actively controlled pre-heat ring for process temperature control | |
| JPH0461117A (en) | Single-wafer cvd device | |
| JPH08191049A (en) | Semiconductor manufacturing device | |
| JPH0697094A (en) | Vapor growth system | |
| JPH01154515A (en) | Plasma cvd system | |
| JPH01120812A (en) | Semiconductor wafer placing table | |
| JPS6010617A (en) | Substrate heating method in plasma cvd apparatus |