JPH06151322A - Heating device for thin-film manufacturing apparatus - Google Patents

Abstract

PURPOSE:To achieve that a thin film formed on the surface of a substrate is made uniform and to enhance the quality of the thin film by individually controlling a plurality of divided heating-element patterns at the inside and the outside. CONSTITUTION:A heating element 4 formed on the surface of a heat insulating material is divided into, and formed as, a circular heating element pattern 41, at the inner circumferential side, whose center corresponds to the center of a substrate and a heating-element pattern 42, at the outer circumferential side, which is formed in a concentric circle shape at its outer circumference. When the respective heating-element patterns 41, 42 are controlled individually, the heat-generating amount of the heating-element patterns 41, 42 at the inner circumferential part and the outer circumferential part can be set properly according to the heating temperature of the substrate, and the surface of the substrate can be heated nearly uniformly to a desired temperature.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heating device for a thin film manufacturing apparatus used in the field of semiconductor manufacturing, and more particularly to a device for uniformly heating a substrate in a thin film manufacturing apparatus for carrying out a vapor phase growth method.

[0002]

2. Description of the Related Art A vapor deposition method for forming a thin film on a substrate is
A raw material gas is supplied onto a heated substrate (wafer) and the raw material gas is thermally decomposed to form a predetermined thin film on the substrate. In order to form a uniform thin film, the substrate surface is heated to a uniform temperature. There is a need to. For this reason, conventionally, various arrangements have been made to the arrangement of the heating element of the heating device for heating the substrate, for example, the nichrome wire, as described in, for example, Japanese Patent Application Laid-Open No. 4-79182.

[0003]

However, when a heating element such as a nichrome wire is formed in a specific pattern,
A good heating condition could be obtained in a certain temperature range, but the substrate surface could not be heated uniformly at other temperatures. In addition, there is a problem that the manufacturing is troublesome.

In particular, when a large-diameter substrate is heated, it is difficult to form the pattern of the heating element in point symmetry. Therefore, a heating element having a pattern capable of heating the entire surface of the substrate to a uniform temperature is manufactured. I couldn't. Therefore, conventionally, a mechanism such as rotating the substrate is provided to make the substrate temperature uniform. However, in this case, since the rotation mechanism is provided, the device becomes complicated and the cost becomes high.

Therefore, the present invention is not limited to a specific temperature.
To provide a heating device for a thin film manufacturing apparatus capable of uniformly heating a substrate surface in a wide temperature range, and capable of obtaining a uniform heating state without providing a rotating mechanism even when heating a large-diameter substrate. It is an object.

[0006]

In order to achieve the above object, a heating apparatus for a thin film manufacturing apparatus of the present invention is a substrate heating apparatus in a thin film manufacturing apparatus for forming a thin film on the surface of a heated substrate, It is characterized in that a plurality of sets of heating elements for heating are divided into concentric circles centered on the substrate center.

Further, according to the heating apparatus for a thin film manufacturing apparatus of the present invention, a plurality of sets of concentric circles centering on the substrate center are provided between the substrate and the concentric circles corresponding to the heating bodies. It is characterized in that a soaking plate formed by dividing into a plurality of parts is provided.

[0008]

[Operation] As described above, by dividing the heating elements into concentric circles centered on the substrate center and providing a plurality of sets, it becomes possible to individually control each of the divided heating elements. The surface of the substrate can be heated to a desired temperature by appropriately setting the heat generation amounts of the heating elements on the inner and outer peripheral portions according to the temperature.

Further, since the heat equalizing plate is also separately formed corresponding to the heat generating elements, even if the pattern of the heat generating elements is not completely provided in point symmetry, heat is generated by the heat equalizing plate corresponding to each heat generating element. Can be averaged, and the entire surface of the substrate can be heated uniformly.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will now be described in more detail based on an embodiment shown in the drawings. First, FIG. 1 is a front view showing an example of a pattern of a heating element, and FIG. 2 is a vertical sectional view of a heating device using this heating element. As shown in FIG. 2, the heating device according to the present embodiment includes a heat insulating material support 2 supported by a heater unit support 1, a heat insulating material 3 provided on the heat insulating material support 2, and a heat insulating material 3 A heating element 4 formed on the upper surface and a heating element retainer 5 for covering the heating element 4
And a soaking plate 6 provided on the upper surface of the heating element holder 5,
The substrate 8 is constituted by a reflector 7 that surrounds the lower part and the outer peripheral part thereof, and the substrate 8 is placed on the heat equalizing plate 6 via the susceptor 9 and is heated by the heat from the heating element 4.

A heating element 4 formed on the upper surface of the heat insulating material 3.
As shown in FIG. 1, the heating element pattern 41 is formed in a circular shape with its center corresponding to the center of the substrate, and the heating element pattern 42 is provided concentrically on the outer circumference and is formed on the outer circumference side. Both patterns 41 and 42 are formed in a shape that can generate heat as uniformly as possible in each pattern. In addition, both patterns 41 and 42
Are connected to a control device (not shown) via the respective power supply units 43.

3 and 4 show a soaking plate 6 provided between the heating element 4 and the substrate 8. The soaking plate 6 is formed on the heating element pattern 41 on the inner peripheral side. It is composed of a corresponding disk-shaped inner uniform heat distribution plate 61 (FIG. 3) and a ring-shaped outer uniform heat distribution plate 62 (FIG. 4) corresponding to the heat generating element pattern 42 on the outer peripheral side. Also, both heat equalizing plates 61, 6
A plurality of slits 63 are provided at predetermined positions on the plate 2, so that thermal distortion of both heat equalizing plates 61 and 62 is prevented.

Each of the above-mentioned components can be formed of various materials conventionally used. For example, quartz is used for the heat insulating material support 2, the heat insulating material 3, the heating element holder 5, and the susceptor 9. Inconel can be used for the heater unit support 1, the heat equalizing plate 6, and the reflector 7. Further, for the heating element 4, nichrome, platinum, or the like can be used depending on the heating temperature.

FIGS. 5 and 6 show the temperature distribution on the surface of the substrate when the substrate is heated by the heating device having the above structure.
FIG. 5 shows the temperature [° C.] at each point when the soaking plate is provided and FIG. 6 shows when the soaking plate is not provided.

The substrate has a diameter of 8 inches (200 mm).
The heat generating element pattern 41 on the inner peripheral side has an outer diameter of 170 mm, the heat generating element pattern 42 on the outer peripheral side has an inner diameter of 188 mm, and an outer diameter of 250 mm.
Each was platinum with a width of 8 mm. The soaking plate is made of Inconel and has a thickness of 3 mm. The inner soaking plate 61 has an outer diameter of 176 mm, the outer soaking plate 62 has an inner diameter of 180 mm, an outer diameter of 252 mm, and the width of each slit is 1 mm. The slit length of the inner heat equalizing plate 61 is 40 mm (total length is 80 m at the center).
m), and the slit length of the outer heat equalizing plate 62 was 15 mm.

When the soaking plate 6 is provided when the input power cost to the inner heating element and the outer heating element is 1: 1.78, as shown in FIG. A temperature distribution within% was obtained. On the other hand, when the soaking plate 6 is not provided,
The temperature distribution was about ± 3% on the entire surface of the substrate. In addition, in the case where the input power cost to both heating elements is 1: 1, that is, when the heating elements are not divided into the inside and outside, the temperature distribution is high in the central part and low in the outer peripheral side.

Further, even when the target heating temperature of the substrate 8 is different, the temperature difference between the central portion and the outer peripheral portion of the substrate can be reduced by adjusting the input power cost to the inner heating element and the outer heating element. It was possible to heat the entire surface of the substrate substantially uniformly.

As described above, by dividing the heating element 4 into the inside and the outside, it is possible to control each of them individually to obtain a uniform temperature distribution. Further, if the soaking plate 6 is provided, a more uniform temperature distribution can be obtained, and the pattern of the heating element 6 can be simplified.

The number of divisions inside and outside the heating element and the pattern can be set appropriately according to the diameter of the substrate to be heated, the heating temperature, etc. The number of divisions of the heat equalizing plate is also arbitrary.
The number of divided heating elements does not necessarily have to be the same. Furthermore, by providing the above-mentioned slits on the heat equalizing plate, it is possible to prevent warpage of the heat equalizing plate during heating, etc., but it may be formed appropriately according to the heating temperature and the allowable deformation amount, and it is not necessary to provide it. Good. Further, the shape of the substrate is not limited to the circular shape, and even if the shape is a quadrangle or a semicircle, the heat radiation at the end can be compensated, so that the temperature of the substrate surface can be made more uniform than before. it can.

Further, the heating apparatus of the present invention is not limited to the vapor phase growth method of supplying a source gas onto a substrate to form a thin film on the substrate, but also includes chemical beam epitaxy (CBE), sputtering, vacuum deposition and the like. It can be used in various devices for carrying out thin film growth.

[0021]

As described above, according to the heating apparatus for a thin film manufacturing apparatus of the present invention, the inner circumference is controlled in accordance with the substrate heating temperature by individually controlling each of the heating elements divided into the inside and the outside. The amount of heat generated by the heating element in the peripheral portion and the peripheral portion can be appropriately set, and the substrate surface can be heated to a desired temperature substantially uniformly.

Further, by forming the heat equalizing plate separately in correspondence with the heat generating elements, even if the pattern of the heat generating elements is not provided completely in point symmetry, heat is generated by the heat equalizing plate corresponding to each heat generating element. Can be averaged, and the entire surface of the substrate can be heated uniformly.

Therefore, by using the heating device for a thin film manufacturing apparatus of the present invention, the thin film formed on the substrate surface can be made uniform and the quality of the thin film can be improved.

[Brief description of drawings]

FIG. 1 is a front view of a heating element showing an embodiment of the present invention.

FIG. 2 is a vertical sectional view of a heating device.

FIG. 3 is a front view of an inner heat equalizing plate.

FIG. 4 is a front view of an outer heat equalizing plate.

FIG. 5 is a diagram showing a temperature distribution on a substrate surface when a soaking plate is provided.

FIG. 6 is a diagram showing a temperature distribution on a substrate surface when a soaking plate is not provided.

[Explanation of symbols]

4 ... Heating element, 41 ... Inner peripheral side heating element pattern, 42 ... Outer side heating element pattern 6 ... Soaking plate, 61 ... Inner soaking plate, 62 ... Outside soaking plate 8 ... Substrate

Claims (2)

[Claims] 1. A heating device for a substrate in a thin film manufacturing apparatus for forming a thin film on the surface of a heated substrate, wherein a plurality of sets of heating elements for heating the substrate are provided by concentrically dividing the substrate center. A heating device for a thin film manufacturing apparatus, which is characterized in that 2. A soaking plate, which is divided into a plurality of concentric circles corresponding to the heating element, is provided between the substrate and a plurality of concentric heating elements centered on the substrate center. The heating device for a thin film manufacturing apparatus according to claim 1, wherein