JPS6473661A - Complementary semiconductor device - Google Patents
Complementary semiconductor deviceInfo
- Publication number
- JPS6473661A JPS6473661A JP62231611A JP23161187A JPS6473661A JP S6473661 A JPS6473661 A JP S6473661A JP 62231611 A JP62231611 A JP 62231611A JP 23161187 A JP23161187 A JP 23161187A JP S6473661 A JPS6473661 A JP S6473661A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- type
- depth
- buried layer
- parasitic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve resistance to a latch-up by a method wherein at least an N<+> type or a P<+> type buried layer is formed selectively at a prescribed depth of a semiconductor substrate and a parasitic resistance value of a parasitic bipolar transistor is reduced. CONSTITUTION:In a CMOS semiconductor device which contains a P-channel MOS transistor formed on an N-type semiconductor substrate 1 composed of silicon and an N-channel MOS transistor formed in a P-well 2 formed in the N-type semiconductor substrate 1, an N<+> type buried layer is formed on the whole part at a prescribed depth of the N-type semiconductor substrate 1 in order to reduce a parasitic resistance value of a base for a parasitic PNP transistor 9. If the depth of the P-well 2 is 4-5mum, it is enough to form the N<+> type buried layer from a depth of 5-6mum with a thickness of about 1mum. For this formation, ions of boron are implanted and a heat-treatment operation is executed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62231611A JPS6473661A (en) | 1987-09-14 | 1987-09-14 | Complementary semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62231611A JPS6473661A (en) | 1987-09-14 | 1987-09-14 | Complementary semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6473661A true JPS6473661A (en) | 1989-03-17 |
Family
ID=16926225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62231611A Pending JPS6473661A (en) | 1987-09-14 | 1987-09-14 | Complementary semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6473661A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0399464A (en) * | 1989-09-12 | 1991-04-24 | Mitsubishi Electric Corp | Complementary mos semiconductor device |
| JP2006165026A (en) * | 2004-12-02 | 2006-06-22 | Mitsubishi Electric Corp | Semiconductor device |
| JP2011018928A (en) * | 2010-09-08 | 2011-01-27 | Mitsubishi Electric Corp | Semiconductor device |
| JP2011018929A (en) * | 2010-09-08 | 2011-01-27 | Mitsubishi Electric Corp | Semiconductor device |
| JP2011023734A (en) * | 2010-09-08 | 2011-02-03 | Mitsubishi Electric Corp | Semiconductor device |
-
1987
- 1987-09-14 JP JP62231611A patent/JPS6473661A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0399464A (en) * | 1989-09-12 | 1991-04-24 | Mitsubishi Electric Corp | Complementary mos semiconductor device |
| JP2006165026A (en) * | 2004-12-02 | 2006-06-22 | Mitsubishi Electric Corp | Semiconductor device |
| JP2011018928A (en) * | 2010-09-08 | 2011-01-27 | Mitsubishi Electric Corp | Semiconductor device |
| JP2011018929A (en) * | 2010-09-08 | 2011-01-27 | Mitsubishi Electric Corp | Semiconductor device |
| JP2011023734A (en) * | 2010-09-08 | 2011-02-03 | Mitsubishi Electric Corp | Semiconductor device |
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