JPS57193056A - Complementary mos semiconductor device - Google Patents
Complementary mos semiconductor deviceInfo
- Publication number
- JPS57193056A JPS57193056A JP56077607A JP7760781A JPS57193056A JP S57193056 A JPS57193056 A JP S57193056A JP 56077607 A JP56077607 A JP 56077607A JP 7760781 A JP7760781 A JP 7760781A JP S57193056 A JPS57193056 A JP S57193056A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transistors
- type
- transistor
- channel mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000000295 complement effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 230000003321 amplification Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To set the current amplification factor of a parasitic n-p-n type transistor by isolating p-channel and n-channel MOS transistors with a fine buried region made of polycrystalline Si formed vertically in a semicondcutor substrate when the two transistors are formed in the same semiconductor substrate as a C-MOS semiconductor device. CONSTITUTION:A p type well layer 12 is diffused in an n type Si substrate 11, n<+> type source region 19 and a drain region 20 are formed in th layer 12, an insulating film 13 is covered on the overall surface, between th regions 19 and 20, and a gate electrode 18 is formed on the film 13, thereby forming an n- channel MOS transistor 21. An n<+> type source region 15 and a drain region 16 are diffused also in the substrate 11 in which the well layer 12 adjacent to the transistor 21 is presented, a gate electrode 14 is similarly formed as a p-channel MOS transistor 17. In this structure, a fine vertical groove is opened by anisotropic etching in the substrate 11 between the transistors, a polycrystalline Si layer 22 is buried in the groove, thereby isolating both the transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56077607A JPS57193056A (en) | 1981-05-22 | 1981-05-22 | Complementary mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56077607A JPS57193056A (en) | 1981-05-22 | 1981-05-22 | Complementary mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57193056A true JPS57193056A (en) | 1982-11-27 |
Family
ID=13638605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56077607A Pending JPS57193056A (en) | 1981-05-22 | 1981-05-22 | Complementary mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57193056A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63299265A (en) * | 1987-05-29 | 1988-12-06 | Nissan Motor Co Ltd | Semiconductor device |
-
1981
- 1981-05-22 JP JP56077607A patent/JPS57193056A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63299265A (en) * | 1987-05-29 | 1988-12-06 | Nissan Motor Co Ltd | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6442176A (en) | Semiconductor device and manufacture thereof | |
| EP0346632A3 (en) | Integrated trench-transistor structure and fabrication process | |
| EP0877425A3 (en) | Field effect device with polycrystalline silicon channel | |
| JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
| EP0361121A3 (en) | Semiconductor ic device with improved element isolating scheme | |
| EP0414400A3 (en) | Mosfet depletion device | |
| JPS57193056A (en) | Complementary mos semiconductor device | |
| JPS56110264A (en) | High withstand voltage mos transistor | |
| JPS57204171A (en) | Semiconductor device | |
| JPS5723260A (en) | Complementary mos semiconductor device | |
| JPS5723259A (en) | Complementary type mos semiconductor device | |
| JPS55120171A (en) | Semiconductor integrated circuit | |
| JPS6473661A (en) | Complementary semiconductor device | |
| JPS5513944A (en) | C-mos semiconductor device | |
| JPS6431471A (en) | Semiconductor device | |
| JPS6489457A (en) | Manufacture of semiconductor device | |
| JPS5571068A (en) | Mos transistor and its manufacturing method | |
| JPS5632767A (en) | Mos inverter | |
| JPS5664465A (en) | C-mos integrated circuit | |
| JPS56129375A (en) | Mos integrate circuit | |
| JPS57173965A (en) | Semiconductor device | |
| JPS57143855A (en) | Semiconductor integrated circuit device | |
| JPS6428950A (en) | Semiconductor storage device and manufacture thereof | |
| JPS5636165A (en) | Insulated gate type field-effect transistor | |
| JPS5455180A (en) | Semiconductor circuit device |