JPS5583261A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5583261A
JPS5583261A JP15730478A JP15730478A JPS5583261A JP S5583261 A JPS5583261 A JP S5583261A JP 15730478 A JP15730478 A JP 15730478A JP 15730478 A JP15730478 A JP 15730478A JP S5583261 A JPS5583261 A JP S5583261A
Authority
JP
Japan
Prior art keywords
region
type
diffused
layer
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15730478A
Other languages
Japanese (ja)
Inventor
Michihiro Inoue
Toyoki Takemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15730478A priority Critical patent/JPS5583261A/en
Publication of JPS5583261A publication Critical patent/JPS5583261A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To provide a high packing density high frequency bipolar IC by selectively forming opposite-conductivity type buried region on a one-conductivity semiconductor substrate, growing the one-conductivity epitaxial layer on the entire surface thereof, and forming the opposite-conductivity type collector region between the epitaxial layer surface and the buried region.
CONSTITUTION: An n+-type buried region 13 is selectively diffused on a p--type silicon substrate 11, a p-type epitaxial layer 12 is grown on the entire surface containing the region 13, and the surface of the region 13 is simultaneously creeped into the layer 12. An n-type collector region 14 reaching the region 13 is diffused in the portion corresponding to the region 13 in the layer 12, a p+-type base region 15 is furthere formed in the region 14, and an n+-type emitter region 16 is formed further in the region 15. In order to preferably lead out an electrode from the region 14, an n+-type region 17 is then diffused at the end of the region 14, a p+-type channel stopper region 18 is formed in the layer 12 to surround the region 14. Thus, there is provided a collector diffused isolation type bipolar semiconductor adapted for high frequency in high packing density.
COPYRIGHT: (C)1980,JPO&Japio
JP15730478A 1978-12-19 1978-12-19 Semiconductor device Pending JPS5583261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15730478A JPS5583261A (en) 1978-12-19 1978-12-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15730478A JPS5583261A (en) 1978-12-19 1978-12-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5583261A true JPS5583261A (en) 1980-06-23

Family

ID=15646730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15730478A Pending JPS5583261A (en) 1978-12-19 1978-12-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5583261A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021349A (en) * 1973-06-27 1975-03-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021349A (en) * 1973-06-27 1975-03-06

Similar Documents

Publication Publication Date Title
JPS54100273A (en) Memory circuit and variable resistance element
JPS57162365A (en) Semiconductor device
JPS57166068A (en) Semiconductor device
JPS5583261A (en) Semiconductor device
JPS56103460A (en) Semiconductor device
JPS5596675A (en) Semiconductor device
JPS55103756A (en) Electrostatic induction transistor integrated circuit
JPS5778171A (en) Thyristor
JPS5687360A (en) Transistor device
JPS5762552A (en) Manufacture of semiconductor device
JPS57134967A (en) Manufacture of semiconductor device
JPS5469079A (en) Manufacture of semiconductor device
JPS6415974A (en) Semiconductor device
JPS54162477A (en) Lateral transistor
JPS5591866A (en) Manufacture of semiconductor device
JPS54128294A (en) Semiconductor device
JPS54158889A (en) Manufacture of semiconductor device
JPS54140484A (en) Semiconductor integrated circuit device
JPS54126478A (en) Transistor
JPS5570043A (en) Fabricating method of semiconductor device having isolating oxide region
JPS6453572A (en) Semiconductor integrated circuit device with bipolar element
JPS5749249A (en) Semiconductor integrated circuit device
JPS5683968A (en) Semiconductor integrated circuit device
JPS5787170A (en) Semiconductor device
JPS5469089A (en) Semiconductor device