JPS5731177A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5731177A
JPS5731177A JP10575980A JP10575980A JPS5731177A JP S5731177 A JPS5731177 A JP S5731177A JP 10575980 A JP10575980 A JP 10575980A JP 10575980 A JP10575980 A JP 10575980A JP S5731177 A JPS5731177 A JP S5731177A
Authority
JP
Japan
Prior art keywords
layer
region
thickness
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10575980A
Other languages
Japanese (ja)
Inventor
Masamizu Konaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10575980A priority Critical patent/JPS5731177A/en
Publication of JPS5731177A publication Critical patent/JPS5731177A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To optimize triode characteristics of an MOS-FET with SOS construction, by decreasing the ratio of effective channel length between a source and a drain to gate oxide film thickness. CONSTITUTION:A P type Si layer 12 is formed in island shape on a sapphire substrate 11. A gate 14 is formed via a gate insulation film 13 on its surface. N type source and drain domains 15, 16 are formed in the layer 12. An N type high-impurity density layer 17 is formed to prevent leakage at an interface between the layer 12 and the substrate 11 and to suppress punch through. A channel region 18 is formed in a region surrounded by the regions 15 and 16, and the layer 17. In this constitution, impurity density of the region 18 is set below 4X10<15>/cm<3>, and thickness of the region 18 is 0.4mum effectively. The ratio Leff/Tox between thickness Tox of the film 13 and length Leff of the channel is below 10. Good triode characteristics are obtained by satisfying these conditions.
JP10575980A 1980-07-31 1980-07-31 Insulated gate type field effect transistor Pending JPS5731177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10575980A JPS5731177A (en) 1980-07-31 1980-07-31 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10575980A JPS5731177A (en) 1980-07-31 1980-07-31 Insulated gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5731177A true JPS5731177A (en) 1982-02-19

Family

ID=14416142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10575980A Pending JPS5731177A (en) 1980-07-31 1980-07-31 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5731177A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4819043A (en) * 1985-11-29 1989-04-04 Hitachi, Ltd. MOSFET with reduced short channel effect
JPH0430872U (en) * 1990-07-11 1992-03-12
USH1423H (en) * 1992-12-10 1995-04-04 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating a silicon-on-insulator voltage multiplier
US6784492B1 (en) * 1991-03-18 2004-08-31 Canon Kabushiki Kaisha Semiconductor device including a gate-insulated transistor
KR20190113738A (en) 2017-02-03 2019-10-08 세키스이가가쿠 고교가부시키가이샤 Admixture Compositions and Kits for Gypsum Compositions

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4819043A (en) * 1985-11-29 1989-04-04 Hitachi, Ltd. MOSFET with reduced short channel effect
JPH0430872U (en) * 1990-07-11 1992-03-12
US6784492B1 (en) * 1991-03-18 2004-08-31 Canon Kabushiki Kaisha Semiconductor device including a gate-insulated transistor
USH1423H (en) * 1992-12-10 1995-04-04 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating a silicon-on-insulator voltage multiplier
KR20190113738A (en) 2017-02-03 2019-10-08 세키스이가가쿠 고교가부시키가이샤 Admixture Compositions and Kits for Gypsum Compositions

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