JPS5654074A - Manufacture of schottky barrier-type field-effect transistor - Google Patents

Manufacture of schottky barrier-type field-effect transistor

Info

Publication number
JPS5654074A
JPS5654074A JP13064779A JP13064779A JPS5654074A JP S5654074 A JPS5654074 A JP S5654074A JP 13064779 A JP13064779 A JP 13064779A JP 13064779 A JP13064779 A JP 13064779A JP S5654074 A JPS5654074 A JP S5654074A
Authority
JP
Japan
Prior art keywords
concave
opening
layer
film
narrow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13064779A
Other languages
Japanese (ja)
Inventor
Yoshinobu Kadowaki
Takeshi Suzuki
Mutsuyuki Otsubo
Takashi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13064779A priority Critical patent/JPS5654074A/en
Publication of JPS5654074A publication Critical patent/JPS5654074A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a narrow electrode by a method wherein basic bodies are in succession applied etchings and a wider shallow concave at the first step and a narrow deep concave at the second step which is situated in the former are formed, while shifting the opening portions formed on two masks used when a gate electrode is formed. CONSTITUTION:A source electrode 2 and a drain electrode 3 are formed on a semiconductor base 1 composed of an N<-> type GaAs layer 11 having on its surface an N type GaAs epitaxial layer 12, a photo-resisting layer 7 is coated to the whole surface, and an opening 71 with width L is drilled through a gate electrode formation region. Then, by applying the etching, the first concave 121 is formed in the layer 12 within the opening 71, the film 7 being taken off to newly apply coating with a photo-resisting layer 8 to the whole surface, which is also drilled for an opening 81 with the same width L. The positions of the openings 71 and 81 are slid to make the end of the film 8 cover a part of the concave 121. Thereafter, by applying etching thereto, the second concave 122 which is narrow in width and deep is formed in the concave 121 and a gate electrode 4a is placed extending from the concave 122 to the bottom of the concave 121, removing the film 8.
JP13064779A 1979-10-08 1979-10-08 Manufacture of schottky barrier-type field-effect transistor Pending JPS5654074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13064779A JPS5654074A (en) 1979-10-08 1979-10-08 Manufacture of schottky barrier-type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13064779A JPS5654074A (en) 1979-10-08 1979-10-08 Manufacture of schottky barrier-type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5654074A true JPS5654074A (en) 1981-05-13

Family

ID=15039246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13064779A Pending JPS5654074A (en) 1979-10-08 1979-10-08 Manufacture of schottky barrier-type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5654074A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2543365A1 (en) * 1983-03-26 1984-09-28 Mitsubishi Electric Corp Field-effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2543365A1 (en) * 1983-03-26 1984-09-28 Mitsubishi Electric Corp Field-effect transistor

Similar Documents

Publication Publication Date Title
JPS57128071A (en) Field-effect type semiconductor device and manufacture thereof
JPS5636143A (en) Manufacture of semiconductor device
GB1437112A (en) Semiconductor device manufacture
US4782031A (en) Method of making GaAs MOSFET with low source resistance yet having satisfactory leakage current by ion-implantation
JPS5654074A (en) Manufacture of schottky barrier-type field-effect transistor
JPS54146584A (en) Manufacture of semiconductor device
JPS57103364A (en) Preparation of field-effect trasistor
US4104087A (en) Method for fabricating MNOS memory circuits
JPS5627972A (en) Manufacture of compound semiconductor device
JPS5578532A (en) Formation of electrode for semiconductor device
JPS6472567A (en) Manufacture of semiconductor device
JPS5688356A (en) Manufacture of memory cell
JPS57202782A (en) Formation of gate electrode
JPS57204175A (en) Manufacture of semiconductor device
JPS5636170A (en) Manufacture of field-effect semiconductor device
JPS55151370A (en) Field effect transistor and fabricating method of the same
JPS5495186A (en) Production of compound semiconductor device
JPS5673475A (en) Schottky barrier type field-effect transistor
JPS54146974A (en) Production of schottky field effect transistor
JPS5627974A (en) Manufacture of compound semiconductor device
JPS57190364A (en) Manufacture of junction type fet
JPS5553464A (en) Method for producing semiconductor element
JPS57193062A (en) Manufacture of semiconductor device
JPS57177563A (en) Junction type filed effect transistor and manufacture thereof
JPS56147467A (en) Cmos semiconductor device and manufacture thereof