JPS6427273A - Manufacture of vertical field effect transistor - Google Patents

Manufacture of vertical field effect transistor

Info

Publication number
JPS6427273A
JPS6427273A JP62183900A JP18390087A JPS6427273A JP S6427273 A JPS6427273 A JP S6427273A JP 62183900 A JP62183900 A JP 62183900A JP 18390087 A JP18390087 A JP 18390087A JP S6427273 A JPS6427273 A JP S6427273A
Authority
JP
Japan
Prior art keywords
gate electrode
interlayer insulating
insulating film
etching
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62183900A
Other languages
Japanese (ja)
Inventor
Yoshitomo Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62183900A priority Critical patent/JPS6427273A/en
Publication of JPS6427273A publication Critical patent/JPS6427273A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make it possible to constitute a miniaturized cell structure with a reduced distance between a source contact and a gate electrode, by forming on interlayer insulating film between gate end source electrodes in combination with anisotropic etching and isotropic etching. CONSTITUTION:A method comprises the steps or forming an interlayer insulating film 4 between a gate electrode 3 and a source electrode 9 above the gate electrode, etching the interlayer insulating film and the lower gate electrode 3, and forming the interlayer insulating layer 4 between the gate electrode and 8 source electrode (source contact portion) on the side of the gate electrode. It further comprises the steps of selectively (anisotropic) etching a surface of this interlayer insulating film parallel to a wafer and (isotropic) etching for tapering a source contact hole. As a result, a margin for matching a mask alignment is not required and the interlayer insulating film between the side of the gate electrode and the source contact can be thin by control, which has on effect on miniaturization of a cell structure.
JP62183900A 1987-07-22 1987-07-22 Manufacture of vertical field effect transistor Pending JPS6427273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62183900A JPS6427273A (en) 1987-07-22 1987-07-22 Manufacture of vertical field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62183900A JPS6427273A (en) 1987-07-22 1987-07-22 Manufacture of vertical field effect transistor

Publications (1)

Publication Number Publication Date
JPS6427273A true JPS6427273A (en) 1989-01-30

Family

ID=16143774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62183900A Pending JPS6427273A (en) 1987-07-22 1987-07-22 Manufacture of vertical field effect transistor

Country Status (1)

Country Link
JP (1) JPS6427273A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63100288A (en) * 1987-08-28 1988-05-02 Matsushita Electric Ind Co Ltd Manufacture of scroll hydraulic machine
JPH0270988A (en) * 1989-02-03 1990-03-09 Matsushita Electric Ind Co Ltd Scroll fluid machine

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683972A (en) * 1979-12-12 1981-07-08 Fujitsu Ltd Manufacture of semiconductor device
JPS62132366A (en) * 1985-12-04 1987-06-15 Nec Corp Manufacture of vertical field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683972A (en) * 1979-12-12 1981-07-08 Fujitsu Ltd Manufacture of semiconductor device
JPS62132366A (en) * 1985-12-04 1987-06-15 Nec Corp Manufacture of vertical field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63100288A (en) * 1987-08-28 1988-05-02 Matsushita Electric Ind Co Ltd Manufacture of scroll hydraulic machine
JPH0270988A (en) * 1989-02-03 1990-03-09 Matsushita Electric Ind Co Ltd Scroll fluid machine

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