JPS6480078A - Vertical field-effect transistor - Google Patents
Vertical field-effect transistorInfo
- Publication number
- JPS6480078A JPS6480078A JP23767687A JP23767687A JPS6480078A JP S6480078 A JPS6480078 A JP S6480078A JP 23767687 A JP23767687 A JP 23767687A JP 23767687 A JP23767687 A JP 23767687A JP S6480078 A JPS6480078 A JP S6480078A
- Authority
- JP
- Japan
- Prior art keywords
- film
- regions
- grown
- resist
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To bring the source electrode into contact with the base regions easily without fail by a method wherein a groove reaching the base region is formed in the source region passing through the source region. CONSTITUTION:An SiO2 film 2 is grown on a substrate 1 and then polycrystalline Si 3 is grown on the SiO2 film 2. First, impurity is ion-implanted in the substrate 1 using the polycrystalline Si 3 as a mask to form base regions 4 and source regions 5. Second, an interlayer insulating film 7 is grown and then the film 7 and the film 2 are anisotropically etched away using a resist 8 coated on the film 7 as a mask. Furthermore, the substrate 1 is anisotropically etched away to form a groove 11 shallower than the regions 4 but deeper than the regions 5. Third, the film 7 and the film 2 are isotropically etched away using the resist 8 as a mask. Finally, the resist 8 is removed to form source electrodes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23767687A JPS6480078A (en) | 1987-09-21 | 1987-09-21 | Vertical field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23767687A JPS6480078A (en) | 1987-09-21 | 1987-09-21 | Vertical field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6480078A true JPS6480078A (en) | 1989-03-24 |
Family
ID=17018856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23767687A Pending JPS6480078A (en) | 1987-09-21 | 1987-09-21 | Vertical field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6480078A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007115734A (en) * | 2005-10-18 | 2007-05-10 | Nec Electronics Corp | Method of manufacturing semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6021571A (en) * | 1983-07-15 | 1985-02-02 | Tdk Corp | Semiconductor device and manufacture thereof |
-
1987
- 1987-09-21 JP JP23767687A patent/JPS6480078A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6021571A (en) * | 1983-07-15 | 1985-02-02 | Tdk Corp | Semiconductor device and manufacture thereof |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007115734A (en) * | 2005-10-18 | 2007-05-10 | Nec Electronics Corp | Method of manufacturing semiconductor device |
US7514307B2 (en) | 2005-10-18 | 2009-04-07 | Nec Electronics Corporation | Method of manufacturing a semiconductor apparatus |
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