JPS54107272A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS54107272A
JPS54107272A JP1462578A JP1462578A JPS54107272A JP S54107272 A JPS54107272 A JP S54107272A JP 1462578 A JP1462578 A JP 1462578A JP 1462578 A JP1462578 A JP 1462578A JP S54107272 A JPS54107272 A JP S54107272A
Authority
JP
Japan
Prior art keywords
film
thickness
poly
oxide
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1462578A
Other languages
Japanese (ja)
Inventor
Isao Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1462578A priority Critical patent/JPS54107272A/en
Publication of JPS54107272A publication Critical patent/JPS54107272A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain a desired poly-Si film thickness by forming a poly-Si film, which has a thickness over a desired one, previously on the semiconductor device substrate surface by adhesion and oxidizing a part of the poly-Si film by a required thickness to make an oxide Si film and removing oxide Si.
CONSTITUTION: Gate oxide film 2 which insulates the substrate and the electrode from each other is formed on semiconductor substrate 1, and poly-Si 3 is formed over a required thickness on this film 2 by adhesion. Next, relation l2/l1≈0.44 between thickness l1 of the oxide film and thickness l2 of the poly-Si film reduced by oxidation is utilized to etch poly-Si after oxidation, thereby obtaining a desired thickness.
COPYRIGHT: (C)1979,JPO&Japio
JP1462578A 1978-02-09 1978-02-09 Production of semiconductor device Pending JPS54107272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1462578A JPS54107272A (en) 1978-02-09 1978-02-09 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1462578A JPS54107272A (en) 1978-02-09 1978-02-09 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54107272A true JPS54107272A (en) 1979-08-22

Family

ID=11866378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1462578A Pending JPS54107272A (en) 1978-02-09 1978-02-09 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54107272A (en)

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