JPS54103671A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS54103671A JPS54103671A JP1094378A JP1094378A JPS54103671A JP S54103671 A JPS54103671 A JP S54103671A JP 1094378 A JP1094378 A JP 1094378A JP 1094378 A JP1094378 A JP 1094378A JP S54103671 A JPS54103671 A JP S54103671A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- gold
- treated
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To providea metal forming single eutectic system with Si on poly-Si and use this as a diffusion source by perfoming heat treatment.
CONSTITUTION: After the oxide film 2 on an n type Si substrate 1 is opened with holes, poly-Si 3 is vapor-grown about 6000 Å and Al 4 is evaporated about 300 Å. When treated for 30 minutes at 400°C in N2 layer, the layer 3 is evenly doped by Al and after the heat treatment, the Al is entirely contained in the layer 3. Next, when treated at about 1000°C in N2, the Al diffuses into the substrate 1, creating a layer 4. In the case of gold, this may be done in exactly the same manner and the gold concentration in Si may be controlled extremely precisely by controlling the gold film thickness. Further if a p or n type impurity is contained in the poly-Si, the simultaneous diffusion of the impurity and metal may be accomplished.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1094378A JPS54103671A (en) | 1978-02-01 | 1978-02-01 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1094378A JPS54103671A (en) | 1978-02-01 | 1978-02-01 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54103671A true JPS54103671A (en) | 1979-08-15 |
Family
ID=11764279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1094378A Pending JPS54103671A (en) | 1978-02-01 | 1978-02-01 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54103671A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01186615A (en) * | 1988-01-14 | 1989-07-26 | Toshiba Corp | Manufacture of semiconductor device |
-
1978
- 1978-02-01 JP JP1094378A patent/JPS54103671A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01186615A (en) * | 1988-01-14 | 1989-07-26 | Toshiba Corp | Manufacture of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5688317A (en) | Manufacture of semiconductor device | |
JPS54103671A (en) | Production of semiconductor device | |
JPS56138920A (en) | Method of selection and diffusion for impurities | |
JPS5420671A (en) | Production of semiconductor devices | |
JPS56100475A (en) | Manufacture of semiconductor device | |
JPS558011A (en) | Semi-conductor device manufacturing method | |
JPS56105652A (en) | Manufacture of semiconductor device | |
JPS52124860A (en) | Electrode formation method for semiconductor devices | |
JPS53129981A (en) | Production of semiconductor device | |
JPS5272162A (en) | Production of semiconductor device | |
JPS5346272A (en) | Impurity diffusion method | |
JPS51120666A (en) | Semiconductor device manufacturing method | |
JPS5354972A (en) | Production of semiconductor device | |
JPS52154344A (en) | Impurity diffusion method | |
JPS54162960A (en) | Manufacture of semiconductor device | |
JPS52141580A (en) | Manufacture of mos-type semiconductor device | |
JPS5354484A (en) | Semiconductor device | |
JPS55110056A (en) | Semiconductor device | |
JPS5275268A (en) | Method of diffusing impurity into semiconductor | |
JPS5559778A (en) | Method of fabricating semiconductor device | |
JPS5326681A (en) | Manufact ure of semiconductor device | |
JPS5676538A (en) | Formation of insulating film on semiconductor substrate | |
JPS5513930A (en) | Manufacturing method for semiconductor device | |
JPS55121635A (en) | Diffusing method for impurity in semiconductor apparatus | |
JPS55105380A (en) | Manufacture of semiconductor device |