JPS54103671A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS54103671A
JPS54103671A JP1094378A JP1094378A JPS54103671A JP S54103671 A JPS54103671 A JP S54103671A JP 1094378 A JP1094378 A JP 1094378A JP 1094378 A JP1094378 A JP 1094378A JP S54103671 A JPS54103671 A JP S54103671A
Authority
JP
Japan
Prior art keywords
layer
poly
gold
treated
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1094378A
Other languages
Japanese (ja)
Inventor
Kunio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1094378A priority Critical patent/JPS54103671A/en
Publication of JPS54103671A publication Critical patent/JPS54103671A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To providea metal forming single eutectic system with Si on poly-Si and use this as a diffusion source by perfoming heat treatment.
CONSTITUTION: After the oxide film 2 on an n type Si substrate 1 is opened with holes, poly-Si 3 is vapor-grown about 6000 Å and Al 4 is evaporated about 300 Å. When treated for 30 minutes at 400°C in N2 layer, the layer 3 is evenly doped by Al and after the heat treatment, the Al is entirely contained in the layer 3. Next, when treated at about 1000°C in N2, the Al diffuses into the substrate 1, creating a layer 4. In the case of gold, this may be done in exactly the same manner and the gold concentration in Si may be controlled extremely precisely by controlling the gold film thickness. Further if a p or n type impurity is contained in the poly-Si, the simultaneous diffusion of the impurity and metal may be accomplished.
COPYRIGHT: (C)1979,JPO&Japio
JP1094378A 1978-02-01 1978-02-01 Production of semiconductor device Pending JPS54103671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1094378A JPS54103671A (en) 1978-02-01 1978-02-01 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1094378A JPS54103671A (en) 1978-02-01 1978-02-01 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54103671A true JPS54103671A (en) 1979-08-15

Family

ID=11764279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1094378A Pending JPS54103671A (en) 1978-02-01 1978-02-01 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54103671A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01186615A (en) * 1988-01-14 1989-07-26 Toshiba Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01186615A (en) * 1988-01-14 1989-07-26 Toshiba Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS5688317A (en) Manufacture of semiconductor device
JPS54103671A (en) Production of semiconductor device
JPS56138920A (en) Method of selection and diffusion for impurities
JPS5420671A (en) Production of semiconductor devices
JPS56100475A (en) Manufacture of semiconductor device
JPS558011A (en) Semi-conductor device manufacturing method
JPS56105652A (en) Manufacture of semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS53129981A (en) Production of semiconductor device
JPS5272162A (en) Production of semiconductor device
JPS5346272A (en) Impurity diffusion method
JPS51120666A (en) Semiconductor device manufacturing method
JPS5354972A (en) Production of semiconductor device
JPS52154344A (en) Impurity diffusion method
JPS54162960A (en) Manufacture of semiconductor device
JPS52141580A (en) Manufacture of mos-type semiconductor device
JPS5354484A (en) Semiconductor device
JPS55110056A (en) Semiconductor device
JPS5275268A (en) Method of diffusing impurity into semiconductor
JPS5559778A (en) Method of fabricating semiconductor device
JPS5326681A (en) Manufact ure of semiconductor device
JPS5676538A (en) Formation of insulating film on semiconductor substrate
JPS5513930A (en) Manufacturing method for semiconductor device
JPS55121635A (en) Diffusing method for impurity in semiconductor apparatus
JPS55105380A (en) Manufacture of semiconductor device