JPS5529134A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5529134A
JPS5529134A JP10194878A JP10194878A JPS5529134A JP S5529134 A JPS5529134 A JP S5529134A JP 10194878 A JP10194878 A JP 10194878A JP 10194878 A JP10194878 A JP 10194878A JP S5529134 A JPS5529134 A JP S5529134A
Authority
JP
Japan
Prior art keywords
channel
sio
source
ion
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10194878A
Other languages
Japanese (ja)
Inventor
Shigekazu Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP10194878A priority Critical patent/JPS5529134A/en
Publication of JPS5529134A publication Critical patent/JPS5529134A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To control effective channel length below 1 μm with accuracy by using ion injection method for forming a source and a drain and also a channel.
CONSTITUTION: A window is opened on an SiO2 2 on an n type Si base plate 1 and As ion 5 is injected into this at the rate of 150 KeV, 1016/cm2 so that a source 3a and a drain 4a are formed. Then, it is selectively covered with an SiO2 film 6 of 5000Å and B ion 8 is injected into this at the rate of 250 keV, 1013/cm2 so that a channel 7 is formed. The SiO2 is removed from the layer 3a to prepare a gate oxide film 9 of 1000Å on the layers 3a and 4a. By this heat-treatment, impurities of the source 3a and the channel 7 are re-distributed, so that an effective channel length of approximately 0.5 μm is obtained. Finally, a window is selectively opened on the film 9 to prepare an Al electrode 11. By making the ion injection in two phases in this fashion, it is possible to obtain a MOSFET having an accurate and short effective channel.
COPYRIGHT: (C)1980,JPO&Japio
JP10194878A 1978-08-22 1978-08-22 Manufacturing of semiconductor device Pending JPS5529134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10194878A JPS5529134A (en) 1978-08-22 1978-08-22 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10194878A JPS5529134A (en) 1978-08-22 1978-08-22 Manufacturing of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5529134A true JPS5529134A (en) 1980-03-01

Family

ID=14314110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10194878A Pending JPS5529134A (en) 1978-08-22 1978-08-22 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5529134A (en)

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