JPS5529133A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5529133A
JPS5529133A JP10194778A JP10194778A JPS5529133A JP S5529133 A JPS5529133 A JP S5529133A JP 10194778 A JP10194778 A JP 10194778A JP 10194778 A JP10194778 A JP 10194778A JP S5529133 A JPS5529133 A JP S5529133A
Authority
JP
Japan
Prior art keywords
ion
interface
base plate
sio
injecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10194778A
Other languages
Japanese (ja)
Inventor
Shigekazu Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP10194778A priority Critical patent/JPS5529133A/en
Publication of JPS5529133A publication Critical patent/JPS5529133A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To stabilize threshold value voltage in such a manner as to decrease surface charge density by injecting only H ion into interface between an Si base plate and an SiO2 using ion injection method.
CONSTITUTION: A window is opened on SiO2 2 on an Si base plate 1 to prepare a drain 4a, and a gate oxide film 5 is provided between the layers 3a and 4a. And then, by injecting H ion 6 into an interface 10, an injection energy is selected so that peak of the H ion distribution becomes the interface 10 between the Si base plate 1 and the gate oxide film 5. Now, the film 5 is provided with a window, an electrode 8 is attached thereto and annealed to complete the process. In this mechanism, since H ion injection method is used, it is possible to accurately stabilize a threshold value voltage without disordering profile of impurities.
COPYRIGHT: (C)1980,JPO&Japio
JP10194778A 1978-08-22 1978-08-22 Manufacturing of semiconductor device Pending JPS5529133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10194778A JPS5529133A (en) 1978-08-22 1978-08-22 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10194778A JPS5529133A (en) 1978-08-22 1978-08-22 Manufacturing of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5529133A true JPS5529133A (en) 1980-03-01

Family

ID=14314084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10194778A Pending JPS5529133A (en) 1978-08-22 1978-08-22 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5529133A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969973A (en) * 1982-10-15 1984-04-20 Nec Corp Semiconductor device
JPS62147773A (en) * 1985-12-20 1987-07-01 Nec Corp Manufacture of semiconductor device
JPS63221632A (en) * 1987-03-10 1988-09-14 Nec Corp Manufacture of semiconductor device
JPH02218132A (en) * 1989-02-20 1990-08-30 Nec Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969973A (en) * 1982-10-15 1984-04-20 Nec Corp Semiconductor device
JPS62147773A (en) * 1985-12-20 1987-07-01 Nec Corp Manufacture of semiconductor device
JPS63221632A (en) * 1987-03-10 1988-09-14 Nec Corp Manufacture of semiconductor device
JPH02218132A (en) * 1989-02-20 1990-08-30 Nec Corp Manufacture of semiconductor device

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