JPS5529133A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS5529133A JPS5529133A JP10194778A JP10194778A JPS5529133A JP S5529133 A JPS5529133 A JP S5529133A JP 10194778 A JP10194778 A JP 10194778A JP 10194778 A JP10194778 A JP 10194778A JP S5529133 A JPS5529133 A JP S5529133A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- interface
- base plate
- sio
- injecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: To stabilize threshold value voltage in such a manner as to decrease surface charge density by injecting only H ion into interface between an Si base plate and an SiO2 using ion injection method.
CONSTITUTION: A window is opened on SiO2 2 on an Si base plate 1 to prepare a drain 4a, and a gate oxide film 5 is provided between the layers 3a and 4a. And then, by injecting H ion 6 into an interface 10, an injection energy is selected so that peak of the H ion distribution becomes the interface 10 between the Si base plate 1 and the gate oxide film 5. Now, the film 5 is provided with a window, an electrode 8 is attached thereto and annealed to complete the process. In this mechanism, since H ion injection method is used, it is possible to accurately stabilize a threshold value voltage without disordering profile of impurities.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10194778A JPS5529133A (en) | 1978-08-22 | 1978-08-22 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10194778A JPS5529133A (en) | 1978-08-22 | 1978-08-22 | Manufacturing of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5529133A true JPS5529133A (en) | 1980-03-01 |
Family
ID=14314084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10194778A Pending JPS5529133A (en) | 1978-08-22 | 1978-08-22 | Manufacturing of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5529133A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5969973A (en) * | 1982-10-15 | 1984-04-20 | Nec Corp | Semiconductor device |
JPS62147773A (en) * | 1985-12-20 | 1987-07-01 | Nec Corp | Manufacture of semiconductor device |
JPS63221632A (en) * | 1987-03-10 | 1988-09-14 | Nec Corp | Manufacture of semiconductor device |
JPH02218132A (en) * | 1989-02-20 | 1990-08-30 | Nec Corp | Manufacture of semiconductor device |
-
1978
- 1978-08-22 JP JP10194778A patent/JPS5529133A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5969973A (en) * | 1982-10-15 | 1984-04-20 | Nec Corp | Semiconductor device |
JPS62147773A (en) * | 1985-12-20 | 1987-07-01 | Nec Corp | Manufacture of semiconductor device |
JPS63221632A (en) * | 1987-03-10 | 1988-09-14 | Nec Corp | Manufacture of semiconductor device |
JPH02218132A (en) * | 1989-02-20 | 1990-08-30 | Nec Corp | Manufacture of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5735341A (en) | Method of seperating elements of semiconductor device | |
JPS57112078A (en) | Manufacture of electrically rewritable fixed memory | |
JPS5690556A (en) | Semiconductor memory storage | |
JPS5529133A (en) | Manufacturing of semiconductor device | |
JPS5587481A (en) | Mis type semiconductor device | |
JPS5585068A (en) | Preparation of semiconductor device | |
JPS55134974A (en) | Manufacturing of semiconductor device | |
JPS54102982A (en) | Charge transfer type semiconductor device | |
JPS5529134A (en) | Manufacturing of semiconductor device | |
JPS5764965A (en) | Semiconductor device | |
JPS5353980A (en) | Semiconductor device | |
JPS51142278A (en) | Insulated-gate type fet | |
JPS56138951A (en) | Manufacture of semiconductor memory device | |
JPS54131881A (en) | Junction-type field effect transistor | |
JPS5784179A (en) | Semiconductor memory device | |
JPS5526636A (en) | Semiconductor device | |
JPS5577173A (en) | Preparation of insulating gate-type electric field- effective transistor | |
JPS52146567A (en) | Production of semiconductor integrated circuits | |
JPS572579A (en) | Manufacture of junction type field effect transistor | |
JPS558015A (en) | Mos type semiconductor device manufacturing method | |
JPS54143076A (en) | Semiconductor device and its manufacture | |
JPS56110265A (en) | Semiconductor device and its manufacture | |
JPS5491068A (en) | Manufacture of semiconductor device | |
JPS5698832A (en) | Preparation of semiconductor device | |
JPS55110066A (en) | Semiconductor device |