JPS54155783A - Manufacture of insulating-gate type semiconductor device - Google Patents
Manufacture of insulating-gate type semiconductor deviceInfo
- Publication number
- JPS54155783A JPS54155783A JP6455978A JP6455978A JPS54155783A JP S54155783 A JPS54155783 A JP S54155783A JP 6455978 A JP6455978 A JP 6455978A JP 6455978 A JP6455978 A JP 6455978A JP S54155783 A JPS54155783 A JP S54155783A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- poly
- crystal
- threshold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000013078 crystal Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a high-density device by using an ion-injecting method for the threshold-level control of a MOS transistor and by using a poly-crystal Si film with impurities for a load resistance. CONSTITUTION:Onto P-type Si substrate 11, lamination film 22 of SiO2 and Si3N4 is bonded, an opening is made and in substrate 11, B<+>-ion injected region 23 for the threshold-level control of a field region is formed. On region 23, thick field oxidized film 13 is formed by heating and after film 22 is removed, B<+> or P<+>-ion injected region 24 for the threshold-level control of a MOS transistor is formed in substrate 11 and then covered with gate SiO2 film 25. On film 25, poly-crystal Si gate electrode 27a is fitted and onto films 13 at both the edge, poly-crystal Si wirings 27b and 27c are provided; and P<+> or As<+> ions are injected to form N-type source and drain regions 28a and 28b and wiring region 28c of MOS element 1. The entire surface is covered with SiO2 film 29, an opening is made, and poly-crystal Si film 31 containing impurities is bonded to the entire surface and made into load resistance 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6455978A JPS54155783A (en) | 1978-05-29 | 1978-05-29 | Manufacture of insulating-gate type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6455978A JPS54155783A (en) | 1978-05-29 | 1978-05-29 | Manufacture of insulating-gate type semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60269701A Division JPS61166063A (en) | 1985-11-29 | 1985-11-29 | Manufacture of insulated gate type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54155783A true JPS54155783A (en) | 1979-12-08 |
Family
ID=13261700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6455978A Pending JPS54155783A (en) | 1978-05-29 | 1978-05-29 | Manufacture of insulating-gate type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54155783A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5696850A (en) * | 1979-12-30 | 1981-08-05 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS61166063A (en) * | 1985-11-29 | 1986-07-26 | Matsushita Electric Ind Co Ltd | Manufacture of insulated gate type semiconductor device |
-
1978
- 1978-05-29 JP JP6455978A patent/JPS54155783A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5696850A (en) * | 1979-12-30 | 1981-08-05 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS6243547B2 (en) * | 1979-12-30 | 1987-09-14 | Fujitsu Ltd | |
| JPS61166063A (en) * | 1985-11-29 | 1986-07-26 | Matsushita Electric Ind Co Ltd | Manufacture of insulated gate type semiconductor device |
| JPH0432535B2 (en) * | 1985-11-29 | 1992-05-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5626467A (en) | Semiconductor device and the manufacturing process | |
| JPS5736842A (en) | Semiconductor integrated circuit device | |
| JPS54155783A (en) | Manufacture of insulating-gate type semiconductor device | |
| JPS56125875A (en) | Semiconductor integrated circuit device | |
| JPS56129359A (en) | Preparation of semiconductor device | |
| JPS54127289A (en) | Semiconductor integrated circuit device and its manufacture | |
| JPS5567166A (en) | Preparation of mos type semiconductor device | |
| JPS5721855A (en) | Manufacture of complementary mos semiconductor device | |
| JPS572579A (en) | Manufacture of junction type field effect transistor | |
| JPS5499578A (en) | Field effect transistor | |
| JPS57141966A (en) | Manufacture of semiconductor device | |
| JPS5748248A (en) | Manufacture of semiconductor device | |
| JPS5780733A (en) | Manufacture of semiconductor device | |
| JPS56101758A (en) | Semiconductor device | |
| JPS5740973A (en) | Inverter circuit and manufacture therefor | |
| JPS577153A (en) | Preparation of semiconductor device | |
| JPS56115570A (en) | Manufacture of semiconductor device | |
| JPS5739579A (en) | Mos semiconductor device and manufacture thereof | |
| JPS54134579A (en) | Mis semiconductor device | |
| JPS5678157A (en) | Semiconductor device | |
| JPS54150090A (en) | Manufacture of semiconductor device | |
| JPS55157264A (en) | Manufacturing method for semiconductor device | |
| JPS5552254A (en) | Semiconductor device | |
| JPS5552263A (en) | Semiconductor integrated circuit device | |
| JPS5448182A (en) | Semiconductor integrated circuit device |