JPS5646571A - Manufacture of solid image pickup element - Google Patents
Manufacture of solid image pickup elementInfo
- Publication number
- JPS5646571A JPS5646571A JP12355279A JP12355279A JPS5646571A JP S5646571 A JPS5646571 A JP S5646571A JP 12355279 A JP12355279 A JP 12355279A JP 12355279 A JP12355279 A JP 12355279A JP S5646571 A JPS5646571 A JP S5646571A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- film
- type
- overflow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To obtain a solid image pickup element having high integrity by forming an overflow drain region and an overflow gate region for controlling a blooming by a self-alignment of a selective oxidation technique. CONSTITUTION:An SiO2 film 22 and an Si3N4 film 23 are laminated on a P<-> type semiconductor substrate 1, a photoresist film 24 is covered on the whole surface thereof, and windows 25, 26 are opened corresponding to a channel stopper region 5 and an overflow control gate region 4. Subsequently, P type impurity ions are implanted, P type stopper region 5 and a gate region 4 are formed thereon, and the film 23 exposed thereon is etched and removed. Thereafter, the layer 24 is removed, is selectively oxidized, and thick SiO2 layer 27 is formed on the regions 5, 4, the residual layer 24 is removed, and a resist layer 28 is formed over to the half of the layer 27 from the layer 22 exposed. Then, the layers 28, 27 as masks N type impurity ions are injected thereto, and the portion between the regions 4 and 5 is formed with an N<+> type overflow drain region 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54123552A JPS6031111B2 (en) | 1979-09-26 | 1979-09-26 | Manufacturing method of solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54123552A JPS6031111B2 (en) | 1979-09-26 | 1979-09-26 | Manufacturing method of solid-state image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5646571A true JPS5646571A (en) | 1981-04-27 |
| JPS6031111B2 JPS6031111B2 (en) | 1985-07-20 |
Family
ID=14863419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54123552A Expired JPS6031111B2 (en) | 1979-09-26 | 1979-09-26 | Manufacturing method of solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6031111B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57190353A (en) * | 1981-05-19 | 1982-11-22 | Fujitsu Ltd | Manufacture of solid-state image pick-up device |
| KR100239460B1 (en) * | 1992-02-15 | 2000-01-15 | 김영환 | Method of manufacturing charge coupled device |
-
1979
- 1979-09-26 JP JP54123552A patent/JPS6031111B2/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57190353A (en) * | 1981-05-19 | 1982-11-22 | Fujitsu Ltd | Manufacture of solid-state image pick-up device |
| JPH0522395B2 (en) * | 1981-05-19 | 1993-03-29 | Fujitsu Ltd | |
| KR100239460B1 (en) * | 1992-02-15 | 2000-01-15 | 김영환 | Method of manufacturing charge coupled device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6031111B2 (en) | 1985-07-20 |
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