JPS57190353A - Manufacture of solid-state image pick-up device - Google Patents

Manufacture of solid-state image pick-up device

Info

Publication number
JPS57190353A
JPS57190353A JP56076192A JP7619281A JPS57190353A JP S57190353 A JPS57190353 A JP S57190353A JP 56076192 A JP56076192 A JP 56076192A JP 7619281 A JP7619281 A JP 7619281A JP S57190353 A JPS57190353 A JP S57190353A
Authority
JP
Japan
Prior art keywords
layer
gates
equalized
electrodes
electric charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56076192A
Other languages
Japanese (ja)
Other versions
JPH0522395B2 (en
Inventor
Akira Shimohashi
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56076192A priority Critical patent/JPS57190353A/en
Publication of JPS57190353A publication Critical patent/JPS57190353A/en
Publication of JPH0522395B2 publication Critical patent/JPH0522395B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve remarkably quality of the reproduced picture of a solid-state image sensing device by a method wherein blanking gates are formed with the first layer polycrystalline Si layer, storage electrodes are formed with the second layer polycrystalline Si layer, and quantity of electric charge to be discharged respectively from the adjoining storage electrodes are equalized. CONSTITUTION:After the blanking gates 7 are formed with the first layer polycrystalline Si layer on an SiO2 film 10 on an Si substrate 9, oxidation is performed to form SiO2 films 30 on the surfaces thereof, and the storage electrodes 3 are formed with the second layer polycrystalline Si layer on the SiO2 film 10. At this case, the end parts 3a of the electrodes 3 are piled up on the end parts 7a of the blanking gates 7, and a drain 8 for discharge of electric charge being the reverse conductive type with the substrate 9 is formed by self alignment. By this constitution, lateral directional size of the gates 7 on both the sides can be equalized with high precision, and even when the positions of the electrodes 3 are slipped a little in both the directions, lengthes Wr, Wl of channels 20r, 20l being directly under the gates 7 are equalized. Accordingly depthes of wells formed by the channels are equal, and because quantity Qdr of electric charge to be discharged to the drain 8 is equalized to quantity Qdl, the picture of favorable quantity can be obtained.
JP56076192A 1981-05-19 1981-05-19 Manufacture of solid-state image pick-up device Granted JPS57190353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076192A JPS57190353A (en) 1981-05-19 1981-05-19 Manufacture of solid-state image pick-up device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076192A JPS57190353A (en) 1981-05-19 1981-05-19 Manufacture of solid-state image pick-up device

Publications (2)

Publication Number Publication Date
JPS57190353A true JPS57190353A (en) 1982-11-22
JPH0522395B2 JPH0522395B2 (en) 1993-03-29

Family

ID=13598266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076192A Granted JPS57190353A (en) 1981-05-19 1981-05-19 Manufacture of solid-state image pick-up device

Country Status (1)

Country Link
JP (1) JPS57190353A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2578683A1 (en) * 1985-03-08 1986-09-12 Thomson Csf METHOD FOR MANUFACTURING ANTI-GLOWING DIODE ASSOCIATED WITH A SURFACE CHANNEL, AND ANTI-GLOWING SYSTEM OBTAINED THEREBY
JPH04322760A (en) * 1991-04-22 1992-11-12 Koito Mfg Co Ltd Jig for coating

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558581A (en) * 1978-10-26 1980-05-01 Fujitsu Ltd Infrared rays detector
JPS5646571A (en) * 1979-09-26 1981-04-27 Sony Corp Manufacture of solid image pickup element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558581A (en) * 1978-10-26 1980-05-01 Fujitsu Ltd Infrared rays detector
JPS5646571A (en) * 1979-09-26 1981-04-27 Sony Corp Manufacture of solid image pickup element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2578683A1 (en) * 1985-03-08 1986-09-12 Thomson Csf METHOD FOR MANUFACTURING ANTI-GLOWING DIODE ASSOCIATED WITH A SURFACE CHANNEL, AND ANTI-GLOWING SYSTEM OBTAINED THEREBY
US4710234A (en) * 1985-03-08 1987-12-01 Thomson--CSF Process for manufacturing an anti-blooming diode associated with a surface canal
JPH04322760A (en) * 1991-04-22 1992-11-12 Koito Mfg Co Ltd Jig for coating

Also Published As

Publication number Publication date
JPH0522395B2 (en) 1993-03-29

Similar Documents

Publication Publication Date Title
EP0858109A3 (en) Semiconductor memory device and method for manufacturing thereof
JPS61225864A (en) Semiconductor device
EP0948056A3 (en) Solid state image pickup device and manufacturing method therefor
US7713875B2 (en) Variable salicide block for resistance equalization in an array
JPS57190353A (en) Manufacture of solid-state image pick-up device
JPS5690556A (en) Semiconductor memory storage
KR900005664B1 (en) Semiconductor memory device
JPH08167651A (en) Formation method of side contact of semiconductor device
JPS6459960A (en) Nonvolatile semiconductor memory element
JPS5762557A (en) Solid state image pickup device and driving method therefor
JPS57186354A (en) Semiconductor memory storage and manufacture thereof
JPS55157253A (en) Mos semiconductor integrated circuit
JPS5787177A (en) Semiconductor memory device
JPS5651854A (en) Semiconductor memory
JPS56105665A (en) Semiconductor memory device
US8217447B2 (en) Flash memory device with a plurality of source plates
JPS57104264A (en) Semiconductor memory cell
JPS6425458A (en) Manufacture of dynamic ram
JPS5787163A (en) Semiconductor memory storage
JPS56105666A (en) Semiconductor memory device
JPS57103349A (en) Semiconductor memory device
JPS57181276A (en) Solid-state image pickup device
KR100253280B1 (en) Manufacturing method for dram cell
JPS5638865A (en) Manufacture of charge transfer device
JPS54133823A (en) Image sensor