JPS5787163A - Semiconductor memory storage - Google Patents
Semiconductor memory storageInfo
- Publication number
- JPS5787163A JPS5787163A JP55163931A JP16393180A JPS5787163A JP S5787163 A JPS5787163 A JP S5787163A JP 55163931 A JP55163931 A JP 55163931A JP 16393180 A JP16393180 A JP 16393180A JP S5787163 A JPS5787163 A JP S5787163A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- blanking
- wafting
- gates
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To enable to perform a homopolarized blanking and writing as well as to obtain high degree of integration for EPROM for the subject semiconductor memory storage by a method wherein a wafting gate and a blanking gate are provided in parallel with each other on the insulating film which are pinched between a substrate and a control gate, and these gates are superposed on a field region through the intermediary of the insulating film.
CONSTITUTION: Gate films 12a∼12d are provided in matrix form on the P type substrate, and drain regions 19A and 19B, to be connected to an Al digit wire 31, and a source region 19C to be grounded are formed by diffusion. On the field region 13, the blanking gate 14, consisting of the first layer polycrystalline Si, is provided as a blanking line 33, and wafting gates 15a∼15d are formed with the polycrystaline layer in such a manner that the terminal position of the gates will be superposed on the blanking gates by extending on the wafting gate. Control gates 18A and 18B of the third polycrystalline layer are extended on the wafting gate, and are formed as selective wires 35 and 36. The region surrounded by ABCD constitutes 1 bit, a writing operation is performed by applying positive polarity high voltage to lines 31 and 35, and by injecting hot carrier to the wafting gate, and the blanking is performed by grounding the lines 31 and 35, by applying a positive high voltage pulse to the blanking line 33 and by field-emitting the accumulated electron on the wafting gate to the blanking line 33.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55163931A JPS5787163A (en) | 1980-11-20 | 1980-11-20 | Semiconductor memory storage |
EP81305349A EP0052982B1 (en) | 1980-11-20 | 1981-11-11 | Semiconductor memory device and method for manufacturing the same |
DE8181305349T DE3175125D1 (en) | 1980-11-20 | 1981-11-11 | Semiconductor memory device and method for manufacturing the same |
US06/321,322 US4803529A (en) | 1980-11-20 | 1981-11-13 | Electrically erasable and electrically programmable read only memory |
US07/193,079 US4910565A (en) | 1980-11-20 | 1988-05-12 | Electrically erasable and electrically programmable read-only memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55163931A JPS5787163A (en) | 1980-11-20 | 1980-11-20 | Semiconductor memory storage |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5787163A true JPS5787163A (en) | 1982-05-31 |
JPS6139752B2 JPS6139752B2 (en) | 1986-09-05 |
Family
ID=15783540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55163931A Granted JPS5787163A (en) | 1980-11-20 | 1980-11-20 | Semiconductor memory storage |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5787163A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63266884A (en) * | 1987-04-24 | 1988-11-02 | Toshiba Corp | Nonvolatile semiconductor memory |
US7907451B2 (en) | 2008-12-08 | 2011-03-15 | Empire Technology Development Llc | Semiconductor storage device and method of manufacturing same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52106275A (en) * | 1976-03-03 | 1977-09-06 | Nec Corp | Floating type nonvoltile semiconductor memory element |
JPS5513901A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Fixed memory of semiconductor |
-
1980
- 1980-11-20 JP JP55163931A patent/JPS5787163A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52106275A (en) * | 1976-03-03 | 1977-09-06 | Nec Corp | Floating type nonvoltile semiconductor memory element |
JPS5513901A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Fixed memory of semiconductor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63266884A (en) * | 1987-04-24 | 1988-11-02 | Toshiba Corp | Nonvolatile semiconductor memory |
US7907451B2 (en) | 2008-12-08 | 2011-03-15 | Empire Technology Development Llc | Semiconductor storage device and method of manufacturing same |
Also Published As
Publication number | Publication date |
---|---|
JPS6139752B2 (en) | 1986-09-05 |
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