JPS57186354A - Semiconductor memory storage and manufacture thereof - Google Patents

Semiconductor memory storage and manufacture thereof

Info

Publication number
JPS57186354A
JPS57186354A JP56070732A JP7073281A JPS57186354A JP S57186354 A JPS57186354 A JP S57186354A JP 56070732 A JP56070732 A JP 56070732A JP 7073281 A JP7073281 A JP 7073281A JP S57186354 A JPS57186354 A JP S57186354A
Authority
JP
Japan
Prior art keywords
capacity
substrate
oxide film
section
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56070732A
Other languages
Japanese (ja)
Inventor
Masamichi Ishihara
Masanori Hiroki
Takeshi Kajimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56070732A priority Critical patent/JPS57186354A/en
Priority to GB8212113A priority patent/GB2098397A/en
Priority to FR8207966A priority patent/FR2506058A1/en
Priority to KR1019820002028A priority patent/KR840000082A/en
Priority to DE19823217896 priority patent/DE3217896A1/en
Priority to IT21211/82A priority patent/IT1152129B/en
Publication of JPS57186354A publication Critical patent/JPS57186354A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To obtain the dynamic RAM having large capacity by each forming dielectric films determining the capacity value of a memory cell shaped onto a Si substrate and a cel for generating a reference level in Si3N4 and SiO2.
CONSTITUTION: The first gate oxide film and a nitride film mask are stacked to the Si substrate 101 and field oxide films 105 are formed, the surface of the substrate is exposed selectively through etching, and the areas of the capacity of a dummy cell (for generating the reference level) X2 and a memory cell section X1 are equalized. The surface is coated with an oxide film 130 and a nitride film 131, an N+ layer 133 is shaped selectively and an opening is formed to the section X2, and the whole surface including peripheral circuit sections X3, X4 is coated with oxide thin-films 109, 135. A poly Si conductor layer is formed onto the sections X1, X2, and only the capacity section of the cell is limitedly oxidized while removing other sections. The surface of the substrate except the capacity section is exposed, the third gate oxide film 10 is shaped, a poly Si electrode 116 is stacked, the surface is coated with an oxide film 115, an N+ layer is formed using poly Si as a mask, a wiring layer is attached according to a predetermined method, and the device is completed.
COPYRIGHT: (C)1982,JPO&Japio
JP56070732A 1981-05-13 1981-05-13 Semiconductor memory storage and manufacture thereof Pending JPS57186354A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP56070732A JPS57186354A (en) 1981-05-13 1981-05-13 Semiconductor memory storage and manufacture thereof
GB8212113A GB2098397A (en) 1981-05-13 1982-04-27 Semiconductor memory device
FR8207966A FR2506058A1 (en) 1981-05-13 1982-05-07 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE
KR1019820002028A KR840000082A (en) 1981-05-13 1982-05-10 Semiconductor Memory and Manufacturing Method
DE19823217896 DE3217896A1 (en) 1981-05-13 1982-05-12 SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR THEIR PRODUCTION
IT21211/82A IT1152129B (en) 1981-05-13 1982-05-12 SEMICONDUCTOR MEMORY DEVICE AND PROCESS FOR ITS MANUFACTURE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56070732A JPS57186354A (en) 1981-05-13 1981-05-13 Semiconductor memory storage and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57186354A true JPS57186354A (en) 1982-11-16

Family

ID=13439994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56070732A Pending JPS57186354A (en) 1981-05-13 1981-05-13 Semiconductor memory storage and manufacture thereof

Country Status (6)

Country Link
JP (1) JPS57186354A (en)
KR (1) KR840000082A (en)
DE (1) DE3217896A1 (en)
FR (1) FR2506058A1 (en)
GB (1) GB2098397A (en)
IT (1) IT1152129B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519461A1 (en) * 1982-01-06 1983-07-08 Hitachi Ltd SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE
JPS58181319A (en) * 1982-04-19 1983-10-24 Hitachi Ltd Timing generating circuit
JPH0612619B2 (en) * 1982-09-22 1994-02-16 株式会社日立製作所 Semiconductor memory device
JPS59172761A (en) * 1983-03-23 1984-09-29 Hitachi Ltd Semiconductor device
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
JPS60206163A (en) * 1984-03-30 1985-10-17 Toshiba Corp Semiconductor memory device
JPS6421788A (en) * 1987-07-16 1989-01-25 Nec Corp Semiconductor memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5255341A (en) * 1975-10-28 1977-05-06 Motorola Inc Memory circuit
JPS53112686A (en) * 1977-03-14 1978-10-02 Oki Electric Ind Co Ltd Manufacture for semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2130908A1 (en) * 1970-06-22 1971-12-30 Cogar Corp Storage cell with metal oxide semiconductor devices with different slopes
DE2633558C2 (en) * 1976-07-26 1978-08-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Memory chip
JPS5559759A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5255341A (en) * 1975-10-28 1977-05-06 Motorola Inc Memory circuit
JPS53112686A (en) * 1977-03-14 1978-10-02 Oki Electric Ind Co Ltd Manufacture for semiconductor device

Also Published As

Publication number Publication date
FR2506058A1 (en) 1982-11-19
DE3217896A1 (en) 1983-05-26
FR2506058B1 (en) 1985-04-12
GB2098397A (en) 1982-11-17
IT8221211A0 (en) 1982-05-12
IT1152129B (en) 1986-12-31
KR840000082A (en) 1984-01-30

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