IT8221211A0 - SEMICONDUCTOR MEMORY DEVICE AND PROCEDURE FOR ITS MANUFACTURE. - Google Patents

SEMICONDUCTOR MEMORY DEVICE AND PROCEDURE FOR ITS MANUFACTURE.

Info

Publication number
IT8221211A0
IT8221211A0 IT8221211A IT2121182A IT8221211A0 IT 8221211 A0 IT8221211 A0 IT 8221211A0 IT 8221211 A IT8221211 A IT 8221211A IT 2121182 A IT2121182 A IT 2121182A IT 8221211 A0 IT8221211 A0 IT 8221211A0
Authority
IT
Italy
Prior art keywords
procedure
manufacture
memory device
semiconductor memory
semiconductor
Prior art date
Application number
IT8221211A
Other languages
Italian (it)
Other versions
IT1152129B (en
Inventor
Masamichi Ishihara
Masanori Tazunoki
Takeshi Kajimoto
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8221211A0 publication Critical patent/IT8221211A0/en
Application granted granted Critical
Publication of IT1152129B publication Critical patent/IT1152129B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
IT21211/82A 1981-05-13 1982-05-12 SEMICONDUCTOR MEMORY DEVICE AND PROCESS FOR ITS MANUFACTURE IT1152129B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56070732A JPS57186354A (en) 1981-05-13 1981-05-13 Semiconductor memory storage and manufacture thereof

Publications (2)

Publication Number Publication Date
IT8221211A0 true IT8221211A0 (en) 1982-05-12
IT1152129B IT1152129B (en) 1986-12-31

Family

ID=13439994

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21211/82A IT1152129B (en) 1981-05-13 1982-05-12 SEMICONDUCTOR MEMORY DEVICE AND PROCESS FOR ITS MANUFACTURE

Country Status (6)

Country Link
JP (1) JPS57186354A (en)
KR (1) KR840000082A (en)
DE (1) DE3217896A1 (en)
FR (1) FR2506058A1 (en)
GB (1) GB2098397A (en)
IT (1) IT1152129B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519461A1 (en) * 1982-01-06 1983-07-08 Hitachi Ltd SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE
JPS58181319A (en) * 1982-04-19 1983-10-24 Hitachi Ltd Timing generating circuit
JPH0612619B2 (en) * 1982-09-22 1994-02-16 株式会社日立製作所 Semiconductor memory device
JPS59172761A (en) * 1983-03-23 1984-09-29 Hitachi Ltd Semiconductor device
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
JPS60206163A (en) * 1984-03-30 1985-10-17 Toshiba Corp Semiconductor memory device
JPS6421788A (en) * 1987-07-16 1989-01-25 Nec Corp Semiconductor memory device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2130908A1 (en) * 1970-06-22 1971-12-30 Cogar Corp Storage cell with metal oxide semiconductor devices with different slopes
DE2646245A1 (en) * 1975-10-28 1977-05-05 Motorola Inc MEMORY CIRCUIT
DE2633558C2 (en) * 1976-07-26 1978-08-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Memory chip
JPS53112686A (en) * 1977-03-14 1978-10-02 Oki Electric Ind Co Ltd Manufacture for semiconductor device
JPS5559759A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
IT1152129B (en) 1986-12-31
JPS57186354A (en) 1982-11-16
FR2506058B1 (en) 1985-04-12
KR840000082A (en) 1984-01-30
FR2506058A1 (en) 1982-11-19
GB2098397A (en) 1982-11-17
DE3217896A1 (en) 1983-05-26

Similar Documents

Publication Publication Date Title
IT8420481A0 (en) SEMICONDUCTOR MEMORY DEVICE AND PROCEDURE FOR ITS MANUFACTURE.
IT8319413A0 (en) SEMICONDUCTOR DEVICE AND PROCEDURE FOR ITS MANUFACTURE.
IT8221608A0 (en) SEMICONDUCTOR MEMORY DEVICE.
IT8219466A0 (en) SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING PROCEDURE THEREOF.
IT8168603A0 (en) SEMICONDUCTOR DEVICE AND PROCEDURE FOR ITS MANUFACTURE
IT8322777A0 (en) SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROCEDURE FOR ITS MANUFACTURE.
IT8124891A0 (en) SEMICONDUCTOR DEVICE AND PROCEDURE FOR ITS PRODUCTION.
IT7928441A0 (en) SEMICONDUCTOR INTEGRATED CIRCUIT AND PROCEDURE FOR ITS MANUFACTURE.
IT8319579A0 (en) SEMICONDUCTOR MEMORY.
KR860005441A (en) Semiconductor memory device
DE3584799D1 (en) SEMICONDUCTOR DEVICE.
DE3884022D1 (en) Semiconductor memory device.
IT8168266A0 (en) SEMICONDUCTOR DEVICE AND PROCEDURE FOR ITS MANUFACTURE
KR860004478A (en) Semiconductor memory device
DE3581370D1 (en) SEMICONDUCTOR DEVICE.
KR860003606A (en) Semiconductor memory device
IT8322951A0 (en) SEMICONDUCTOR MEMORY DEVICE.
IT8322558A0 (en) SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROCEDURE FOR ITS MANUFACTURE.
KR850008756A (en) Semiconductor memory device
DE3587457D1 (en) SEMICONDUCTOR MEMORY DEVICE.
DE3586568D1 (en) SEMICONDUCTOR DEVICE.
IT8219677A0 (en) SEMICONDUCTOR DEVICE.
IT8221211A0 (en) SEMICONDUCTOR MEMORY DEVICE AND PROCEDURE FOR ITS MANUFACTURE.
IT8222563A0 (en) SEMICONDUCTOR DEVICE AND PROCEDURE FOR ITS MANUFACTURE.
DE3853437D1 (en) Semiconductor memory device.