JPS5619654A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5619654A JPS5619654A JP9501579A JP9501579A JPS5619654A JP S5619654 A JPS5619654 A JP S5619654A JP 9501579 A JP9501579 A JP 9501579A JP 9501579 A JP9501579 A JP 9501579A JP S5619654 A JPS5619654 A JP S5619654A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate
- changed
- polycrystalline
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To prevent the shortage of capacity of a cell when making a dynamic semiconductor memory by a method wherein the first gate oxidation film is consisted of laminated films of SiO2 and Si3N4, and a gate and a word wire are consisted of a polycrystalline Si. CONSTITUTION:A thick field oxidation film 2 is formed on the surrounding section of a p<1>-type Si substrate 1, the sirst thin gate oxidation film 14 is coated on a memory cell storage region and the whole surface, including the film 14, is coated with an Si2N4 film 15. Then, the first polycrystalline Si layer 4, which has been changed to a conductor, is placed on the area ranging from above the film 2 extending to the section of a storage region, its outer section only is changed to an SiO2 film 16 performing a heat treatment, the films 15 and 14 which have not been covered by the film 16 are removed and the second gate insulating film 6 is coated. Next, the second polycrystalline Si layer is placed on the whole surface, a photo etching is performed and the gate and the word wire 8 are left untouched. Then, using the above as a mask, an n<+>-type gate region 9, to be changed to a data line in the substrate 1, and an n<+>-type 10, to be changed to a part of the storage region, are formed by performing a diffusion and the whole surface is protected with a PSG film 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9501579A JPS5619654A (en) | 1979-07-27 | 1979-07-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9501579A JPS5619654A (en) | 1979-07-27 | 1979-07-27 | Manufacture of semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62024502A Division JPS62188265A (en) | 1987-02-06 | 1987-02-06 | Semiconductor memory and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5619654A true JPS5619654A (en) | 1981-02-24 |
Family
ID=14126164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9501579A Pending JPS5619654A (en) | 1979-07-27 | 1979-07-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5619654A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147072A (en) * | 1981-12-16 | 1983-09-01 | ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド | Method of producing mos semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5363992A (en) * | 1976-11-18 | 1978-06-07 | Fairchild Camera Instr Co | Semiconductor structure |
| JPS54524A (en) * | 1977-06-02 | 1979-01-05 | Nec Corp | Semiconductor memory unit |
| JPS5447488A (en) * | 1977-09-21 | 1979-04-14 | Hitachi Ltd | Production of silicon gate type mis semiconductor device |
-
1979
- 1979-07-27 JP JP9501579A patent/JPS5619654A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5363992A (en) * | 1976-11-18 | 1978-06-07 | Fairchild Camera Instr Co | Semiconductor structure |
| JPS54524A (en) * | 1977-06-02 | 1979-01-05 | Nec Corp | Semiconductor memory unit |
| JPS5447488A (en) * | 1977-09-21 | 1979-04-14 | Hitachi Ltd | Production of silicon gate type mis semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147072A (en) * | 1981-12-16 | 1983-09-01 | ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド | Method of producing mos semiconductor device |
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