JPS5715477A - Manufacture of solid state image pickup element - Google Patents
Manufacture of solid state image pickup elementInfo
- Publication number
- JPS5715477A JPS5715477A JP9018680A JP9018680A JPS5715477A JP S5715477 A JPS5715477 A JP S5715477A JP 9018680 A JP9018680 A JP 9018680A JP 9018680 A JP9018680 A JP 9018680A JP S5715477 A JPS5715477 A JP S5715477A
- Authority
- JP
- Japan
- Prior art keywords
- type
- substrate
- regions
- region
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000005121 nitriding Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To improve the resolution of a solid state image pickup element by forming by a self-alignment an overflow drain region, an overflow control gate region and a channel stopper region and integrating picture elements as many as possible in a limited area. CONSTITUTION:An extremely thin SiO2 film 22 and an ordinarily thick photoresist layer 23 are laminated and covered on a P<-> type Si substrate 1, and windows 24, 25 corresponding to an overflow control gate region 4 and a channel stopper region 5 to be formed later are opened. Then, P type impurity ions are injected, P<+> type regions 4, 5 are formed on the surface layer of the substrate 1 exposed in the windows 24, 25, only the layer 23 is removed, with the remaining film 22 as a mask a high temperature nitriding treatment is performed, and thick SiO2 film 26 is formed on the regions 4, 5. Thereafter, the film 22 is modified to an SiO2 film 27, the overall surface is covered with a photoresist layer 28, a window 29 is opened, and an N<+> type overflow drain region 2 is formed in the substrate 1 between the regions 4 and 5 by N type ion injection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9018680A JPS5715477A (en) | 1980-07-02 | 1980-07-02 | Manufacture of solid state image pickup element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9018680A JPS5715477A (en) | 1980-07-02 | 1980-07-02 | Manufacture of solid state image pickup element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5715477A true JPS5715477A (en) | 1982-01-26 |
Family
ID=13991450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9018680A Pending JPS5715477A (en) | 1980-07-02 | 1980-07-02 | Manufacture of solid state image pickup element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5715477A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6603144B2 (en) | 1999-12-15 | 2003-08-05 | Nec Electronics Corporation | Solid-state imaging device and method for fabricating same |
-
1980
- 1980-07-02 JP JP9018680A patent/JPS5715477A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6603144B2 (en) | 1999-12-15 | 2003-08-05 | Nec Electronics Corporation | Solid-state imaging device and method for fabricating same |
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