JPS56112749A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56112749A JPS56112749A JP1451280A JP1451280A JPS56112749A JP S56112749 A JPS56112749 A JP S56112749A JP 1451280 A JP1451280 A JP 1451280A JP 1451280 A JP1451280 A JP 1451280A JP S56112749 A JPS56112749 A JP S56112749A
- Authority
- JP
- Japan
- Prior art keywords
- type
- epitaxial layer
- improve
- columnar part
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0772—Vertical bipolar transistor in combination with resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the integrity of a semiconductor monolithic integrated circuit by employing an epitaxial layer as it is with resistance elements as vertical structure. CONSTITUTION:An N<+> type buried layer 23 is formed in a P type semiconductor substrate 22, and an N type epitaxial layer 24 is grown thereon. Then, a columnar part 28 with the epitaxial layer is formed by etching, and the side surface thereof is surrounded by insulating films 29, 30. Then, an N<+> type collector leading region 25, a P type base region 26 and an N type emitter region 27 are formed, and aluminum electrodes 32-35 are led from the respective regions and elements. The columnar part 28 is used as the resistance element. The one end of the element 28 is connected directly to the buried layer 23 of the bipolar transistor. Thus, metal wires can be omitted to improve the integral density thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1451280A JPS56112749A (en) | 1980-02-08 | 1980-02-08 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1451280A JPS56112749A (en) | 1980-02-08 | 1980-02-08 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56112749A true JPS56112749A (en) | 1981-09-05 |
Family
ID=11863125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1451280A Pending JPS56112749A (en) | 1980-02-08 | 1980-02-08 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56112749A (en) |
-
1980
- 1980-02-08 JP JP1451280A patent/JPS56112749A/en active Pending
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