JPS5467383A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5467383A JPS5467383A JP13450977A JP13450977A JPS5467383A JP S5467383 A JPS5467383 A JP S5467383A JP 13450977 A JP13450977 A JP 13450977A JP 13450977 A JP13450977 A JP 13450977A JP S5467383 A JPS5467383 A JP S5467383A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- base
- layer
- resistance
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To expand the safe operating region by making the width of ballast resistance working as parasitic emitter and the base right beneath the ohmic connection part wider than the width right beneath the emitter.
CONSTITUTION: A deep P layer 21 and a P base 2 are selectively formed in an N epitaxial layer 1' on N+ Si substrate 1. N+ emitter layer 3 divided into 24 regions and adjacent ballast resistance 4 are selectively formed. At this time, the base width right beneath ohmic contact part 4' and resistance 4 is made wider than the width right beneath the emitter 3 by way of the P layer 21. The surface of layer 1' is covered with SiO2 9, and electrodes 6, 7 are composed. When operating this device by reversely base-biasing, each emitter is free of current concentration owing to the effect of the resistance, and also in the parasitic element of connection part 4' of the resistance 4 current is not concentrated because the base width is wider twice, so that the safe operating region is sufficiently large.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13450977A JPS5467383A (en) | 1977-11-08 | 1977-11-08 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13450977A JPS5467383A (en) | 1977-11-08 | 1977-11-08 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5467383A true JPS5467383A (en) | 1979-05-30 |
Family
ID=15129977
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13450977A Pending JPS5467383A (en) | 1977-11-08 | 1977-11-08 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5467383A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61294856A (en) * | 1985-06-21 | 1986-12-25 | Nec Corp | High withstand voltage semiconductor device |
-
1977
- 1977-11-08 JP JP13450977A patent/JPS5467383A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61294856A (en) * | 1985-06-21 | 1986-12-25 | Nec Corp | High withstand voltage semiconductor device |
JPH0466103B2 (en) * | 1985-06-21 | 1992-10-22 | Nippon Electric Co |
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