JPS5467383A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5467383A
JPS5467383A JP13450977A JP13450977A JPS5467383A JP S5467383 A JPS5467383 A JP S5467383A JP 13450977 A JP13450977 A JP 13450977A JP 13450977 A JP13450977 A JP 13450977A JP S5467383 A JPS5467383 A JP S5467383A
Authority
JP
Japan
Prior art keywords
emitter
base
layer
resistance
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13450977A
Other languages
Japanese (ja)
Inventor
Yuji Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13450977A priority Critical patent/JPS5467383A/en
Publication of JPS5467383A publication Critical patent/JPS5467383A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To expand the safe operating region by making the width of ballast resistance working as parasitic emitter and the base right beneath the ohmic connection part wider than the width right beneath the emitter.
CONSTITUTION: A deep P layer 21 and a P base 2 are selectively formed in an N epitaxial layer 1' on N+ Si substrate 1. N+ emitter layer 3 divided into 24 regions and adjacent ballast resistance 4 are selectively formed. At this time, the base width right beneath ohmic contact part 4' and resistance 4 is made wider than the width right beneath the emitter 3 by way of the P layer 21. The surface of layer 1' is covered with SiO2 9, and electrodes 6, 7 are composed. When operating this device by reversely base-biasing, each emitter is free of current concentration owing to the effect of the resistance, and also in the parasitic element of connection part 4' of the resistance 4 current is not concentrated because the base width is wider twice, so that the safe operating region is sufficiently large.
COPYRIGHT: (C)1979,JPO&Japio
JP13450977A 1977-11-08 1977-11-08 Semiconductor device Pending JPS5467383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13450977A JPS5467383A (en) 1977-11-08 1977-11-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13450977A JPS5467383A (en) 1977-11-08 1977-11-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5467383A true JPS5467383A (en) 1979-05-30

Family

ID=15129977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13450977A Pending JPS5467383A (en) 1977-11-08 1977-11-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5467383A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61294856A (en) * 1985-06-21 1986-12-25 Nec Corp High withstand voltage semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61294856A (en) * 1985-06-21 1986-12-25 Nec Corp High withstand voltage semiconductor device
JPH0466103B2 (en) * 1985-06-21 1992-10-22 Nippon Electric Co

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