JPS6429821A - Thin film field effect type transistor element array and its production - Google Patents
Thin film field effect type transistor element array and its productionInfo
- Publication number
- JPS6429821A JPS6429821A JP62185924A JP18592487A JPS6429821A JP S6429821 A JPS6429821 A JP S6429821A JP 62185924 A JP62185924 A JP 62185924A JP 18592487 A JP18592487 A JP 18592487A JP S6429821 A JPS6429821 A JP S6429821A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- line
- film
- drain
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/103—Materials and properties semiconductor a-Si
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To decreases the masks to be used and to simplify stages by laminating a transparent conductive film as a drain electrode line and the laminated films consisting of a 1st metallic film, semiconductor film, insulating film and 2nd metallic film having an island shape on the transparent conductive film. CONSTITUTION:The drain electrode line 17, a display electrode 15 and a source electrode drawn out of the electrode 15 are formed of ITO which is the transparent conductive film on an insulating substrate 11. A gate line 22 is formed to intersect with the drain line 17 and the source electrode. This gate line is made into the three-layered structure consisting successively of I-type amorphous silicon, silicon nitride and aluminum. The island 21 consisting of the laminated films of chromium, N-type amorphous silicon, I-type amorphous silicon, silicon nitride, and aluminum is formed on the drain line 17. The unnecessary parts of the high-concn. doped N-type semiconductor for ohmic formation are also etched, but the metal on the display electrode is exposed and, therefore, this metal is etched. Two sheets of the masks to be used is thereby necessitated and the wiring resistance of the drain electrode is decreased by about one digit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62185924A JPS6429821A (en) | 1987-07-24 | 1987-07-24 | Thin film field effect type transistor element array and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62185924A JPS6429821A (en) | 1987-07-24 | 1987-07-24 | Thin film field effect type transistor element array and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6429821A true JPS6429821A (en) | 1989-01-31 |
Family
ID=16179260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62185924A Pending JPS6429821A (en) | 1987-07-24 | 1987-07-24 | Thin film field effect type transistor element array and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6429821A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6435422A (en) * | 1987-07-30 | 1989-02-06 | Sharp Kk | Thin film transistor array |
EP0414358A2 (en) * | 1989-07-05 | 1991-02-27 | Sharp Kabushiki Kaisha | An active matrix board |
US5728592A (en) * | 1992-10-09 | 1998-03-17 | Fujitsu Ltd. | Method for fabricating a thin film transistor matrix device |
JP2002033331A (en) * | 2000-05-12 | 2002-01-31 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the same |
JP2007500452A (en) * | 2003-05-20 | 2007-01-11 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Field effect transistor configuration and method of manufacturing field effect transistor configuration |
KR100685945B1 (en) * | 2000-12-29 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | Liquid crystal display and manufacturing method of the same |
US8519049B2 (en) | 2005-09-27 | 2013-08-27 | Cemedine Co., Ltd. | Curable composition |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61179486A (en) * | 1985-02-04 | 1986-08-12 | 三菱電機株式会社 | Conductor device |
JPS62500745A (en) * | 1984-10-17 | 1987-03-26 | レタ・フランセ・ルプレザント・パ・ル・ミニストル・デ・ペ・テ・テ・(セントル・ナシヨナル・デチユ−ド・デ・テレコミユニカシオン) | Method of manufacturing active matrix display screen |
-
1987
- 1987-07-24 JP JP62185924A patent/JPS6429821A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62500745A (en) * | 1984-10-17 | 1987-03-26 | レタ・フランセ・ルプレザント・パ・ル・ミニストル・デ・ペ・テ・テ・(セントル・ナシヨナル・デチユ−ド・デ・テレコミユニカシオン) | Method of manufacturing active matrix display screen |
JPS61179486A (en) * | 1985-02-04 | 1986-08-12 | 三菱電機株式会社 | Conductor device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6435422A (en) * | 1987-07-30 | 1989-02-06 | Sharp Kk | Thin film transistor array |
EP0414358A2 (en) * | 1989-07-05 | 1991-02-27 | Sharp Kabushiki Kaisha | An active matrix board |
US5728592A (en) * | 1992-10-09 | 1998-03-17 | Fujitsu Ltd. | Method for fabricating a thin film transistor matrix device |
JP2002033331A (en) * | 2000-05-12 | 2002-01-31 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the same |
KR100685945B1 (en) * | 2000-12-29 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | Liquid crystal display and manufacturing method of the same |
JP2007500452A (en) * | 2003-05-20 | 2007-01-11 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Field effect transistor configuration and method of manufacturing field effect transistor configuration |
US8519049B2 (en) | 2005-09-27 | 2013-08-27 | Cemedine Co., Ltd. | Curable composition |
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