JPS6476752A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6476752A JPS6476752A JP62233416A JP23341687A JPS6476752A JP S6476752 A JPS6476752 A JP S6476752A JP 62233416 A JP62233416 A JP 62233416A JP 23341687 A JP23341687 A JP 23341687A JP S6476752 A JPS6476752 A JP S6476752A
- Authority
- JP
- Japan
- Prior art keywords
- region
- diffusion layer
- concentration
- low concentration
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Abstract
PURPOSE:To obtain a desired resistance value without elongating an input protecting resistance, and improve dielectric strength of electrostatic charge, by forming the input protecting resistance, of a second conductivity type low concentration diffusion layer, and arranging a second conductivity type diffusion layer of intermediate concentration, between a second conductivity type high concentration diffusion layer of the connecting part with a wiring, and said low concentration diffusion layer. CONSTITUTION:Boron ion is implanted by applying SiO2 formed on the surface of an N-type substrate 1 to a mask, and diffused to formed a P<--> low concentration diffusion layer 2 as a high resistive region. After an oxide film 31 is formed, boron ion is again implanted, a P<-> type diffusion layer 7 of intermediate concentration is formed. Further, boron ion is implanted, and in the same manner as prior arts, a P<+> region 4 is formed at the same time of a source.drain region of a P-channel MOS. By forming the diffusion region 7 of intermediate concentration, between the low concentration region 2 and the high concentration region 4, junction destruction due to current concentration, which occurs at the junction part between P<+> region and P<--> region, in particular, in the vicinity of an oxide film, can be reduced. Since it is not necessary to decrease the resistance of the low concentration P<--> region 2, the area of an input protecting part is not enlarged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62233416A JPS6476752A (en) | 1987-09-17 | 1987-09-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62233416A JPS6476752A (en) | 1987-09-17 | 1987-09-17 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6476752A true JPS6476752A (en) | 1989-03-22 |
Family
ID=16954719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62233416A Pending JPS6476752A (en) | 1987-09-17 | 1987-09-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6476752A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5831317A (en) * | 1993-05-25 | 1998-11-03 | Matsushita Electronics Corporation | Semiconductor device and manufacture thereof |
-
1987
- 1987-09-17 JP JP62233416A patent/JPS6476752A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5831317A (en) * | 1993-05-25 | 1998-11-03 | Matsushita Electronics Corporation | Semiconductor device and manufacture thereof |
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