JPS6089972A - Mis type semiconductor device - Google Patents

Mis type semiconductor device

Info

Publication number
JPS6089972A
JPS6089972A JP19859283A JP19859283A JPS6089972A JP S6089972 A JPS6089972 A JP S6089972A JP 19859283 A JP19859283 A JP 19859283A JP 19859283 A JP19859283 A JP 19859283A JP S6089972 A JPS6089972 A JP S6089972A
Authority
JP
Japan
Prior art keywords
region
substrate
source
film
conductive type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19859283A
Other languages
Japanese (ja)
Inventor
Takashi Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP19859283A priority Critical patent/JPS6089972A/en
Publication of JPS6089972A publication Critical patent/JPS6089972A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation

Abstract

PURPOSE:To obtain a short channel IG FET having small junction capacity by forming a region which has the same conductive type as a semiconductor substrate and high impurity density more deeply than source and drain regions in a channel region disposed between the source and drain regions formed in the surface layer of the substrate. CONSTITUTION:A thick insulator separating field insulating film 8 is formed on the periphery of a semiconductor substrate 3, and a thin gate insulating film 7 is coated on the surface of the substrate 3 surrounded by the film 8. Then, ions are implanted through the film 7 to form source and drain regions 2 of different conductive type from the substrate 3, and a region 1 which has the same conductive type as the substrate 3 and high impurity density is formed more deeply than the region 2 in the region 4 between the regions 2. At this time the region 1 does not penetrate the source and drain junction due to the fact that the impurity density of the region 2 is high. Then, a gate electrode 6 is coated on the film 7 between the regions 2.
JP19859283A 1983-10-24 1983-10-24 Mis type semiconductor device Pending JPS6089972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19859283A JPS6089972A (en) 1983-10-24 1983-10-24 Mis type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19859283A JPS6089972A (en) 1983-10-24 1983-10-24 Mis type semiconductor device

Publications (1)

Publication Number Publication Date
JPS6089972A true JPS6089972A (en) 1985-05-20

Family

ID=16393748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19859283A Pending JPS6089972A (en) 1983-10-24 1983-10-24 Mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS6089972A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62208674A (en) * 1986-03-08 1987-09-12 Agency Of Ind Science & Technol Semiconductor device
JPS63124575A (en) * 1986-11-14 1988-05-28 Nec Corp Semiconductor device
JPS6418263A (en) * 1987-07-14 1989-01-23 Sanyo Electric Co Manufacture of depletion mode metal-oxide semiconductor device
JPS6418262A (en) * 1987-07-14 1989-01-23 Sanyo Electric Co Depletion mode metal-oxide semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134974A (en) * 1979-04-06 1980-10-21 Nec Corp Manufacturing of semiconductor device
JPS5613772A (en) * 1979-07-16 1981-02-10 Fujitsu Ltd Preparation of semiconductor device
JPS5683973A (en) * 1979-12-12 1981-07-08 Fujitsu Ltd Manufacture of mos type transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134974A (en) * 1979-04-06 1980-10-21 Nec Corp Manufacturing of semiconductor device
JPS5613772A (en) * 1979-07-16 1981-02-10 Fujitsu Ltd Preparation of semiconductor device
JPS5683973A (en) * 1979-12-12 1981-07-08 Fujitsu Ltd Manufacture of mos type transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62208674A (en) * 1986-03-08 1987-09-12 Agency Of Ind Science & Technol Semiconductor device
JPS63124575A (en) * 1986-11-14 1988-05-28 Nec Corp Semiconductor device
JPS6418263A (en) * 1987-07-14 1989-01-23 Sanyo Electric Co Manufacture of depletion mode metal-oxide semiconductor device
JPS6418262A (en) * 1987-07-14 1989-01-23 Sanyo Electric Co Depletion mode metal-oxide semiconductor device

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