JPS5612742A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5612742A
JPS5612742A JP8768279A JP8768279A JPS5612742A JP S5612742 A JPS5612742 A JP S5612742A JP 8768279 A JP8768279 A JP 8768279A JP 8768279 A JP8768279 A JP 8768279A JP S5612742 A JPS5612742 A JP S5612742A
Authority
JP
Japan
Prior art keywords
electrode
ground
extended
circuit
solder material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8768279A
Other languages
Japanese (ja)
Other versions
JPS6217395B2 (en
Inventor
Hidetake Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8768279A priority Critical patent/JPS5612742A/en
Publication of JPS5612742A publication Critical patent/JPS5612742A/en
Publication of JPS6217395B2 publication Critical patent/JPS6217395B2/ja
Granted legal-status Critical Current

Links

Classifications

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To prevent the short-circuit of a ground electrode with other electrodes by grounding the electrode with a solder material through a cut step which is provided at the end of the semiconductor pellet to have the electrode extended thereto. CONSTITUTION:On a semi-insulated GaAs substrate 2, the cut step (B) is formed at the pellet end of a GaAs FET which has a mesa active region II through a buffer layer 15 and a section 5b to have the ground electrode (source electrode) 5 extended thereto is formed at the step. The ground electrode is ground connected to a header 4 with the substrate back by the solder material. This eliminates short-circuit between a source electrode and a drain electrode. Extra slack of a wire 9a is not needed thereby reducing harmful inductance component drastically.
JP8768279A 1979-07-11 1979-07-11 Semiconductor device Granted JPS5612742A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8768279A JPS5612742A (en) 1979-07-11 1979-07-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8768279A JPS5612742A (en) 1979-07-11 1979-07-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5612742A true JPS5612742A (en) 1981-02-07
JPS6217395B2 JPS6217395B2 (en) 1987-04-17

Family

ID=13921695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8768279A Granted JPS5612742A (en) 1979-07-11 1979-07-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5612742A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02207894A (en) * 1989-02-08 1990-08-17 Chubu Electric Power Co Inc Method for nitrification by using included and immobilized microorganism

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5341173A (en) * 1976-09-28 1978-04-14 Nec Corp Manufacture of semiconductor device
JPS5367374A (en) * 1976-11-27 1978-06-15 Nec Corp Manufacture of schottky barrier field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5341173A (en) * 1976-09-28 1978-04-14 Nec Corp Manufacture of semiconductor device
JPS5367374A (en) * 1976-11-27 1978-06-15 Nec Corp Manufacture of schottky barrier field effect transistor

Also Published As

Publication number Publication date
JPS6217395B2 (en) 1987-04-17

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