JPS5799783A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5799783A
JPS5799783A JP17564080A JP17564080A JPS5799783A JP S5799783 A JPS5799783 A JP S5799783A JP 17564080 A JP17564080 A JP 17564080A JP 17564080 A JP17564080 A JP 17564080A JP S5799783 A JPS5799783 A JP S5799783A
Authority
JP
Japan
Prior art keywords
electrodes
source
drain
buffer layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17564080A
Other languages
Japanese (ja)
Inventor
Kuninori Kitahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17564080A priority Critical patent/JPS5799783A/en
Publication of JPS5799783A publication Critical patent/JPS5799783A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To stabilize potential of high-resistance layer under an active layer particularly, by connecting either source or drain electrode to an electrode which consists of materials for ohmic contact with a semi-insulating substrate of a composite semiconductor or a buffer layer. CONSTITUTION:A P type GaAs buffer layer 9 is provided on a GaAs semi-insulating substrate 8. P type electrodes 11, 12 are formed by accumulating Au-Zn and Au for ohmic contact with it. A part of electrodes terminals 6, 7 derived from source and drain electrodes 3, 4 formed on an N type GaAs active layer 2 is attached to the electrodes 11, 12. A part of electrodes 6, 7 is directly contacted directly on a buffer layer 9 as usual. Accordingly, the buffer layer 9 is always fixed to the potential of source and drain regardless of its dielectric types. It neither floats nor varies in depletion layer width. The current is stabilized between source and drain.
JP17564080A 1980-12-12 1980-12-12 Field effect transistor Pending JPS5799783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17564080A JPS5799783A (en) 1980-12-12 1980-12-12 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17564080A JPS5799783A (en) 1980-12-12 1980-12-12 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS5799783A true JPS5799783A (en) 1982-06-21

Family

ID=15999614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17564080A Pending JPS5799783A (en) 1980-12-12 1980-12-12 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5799783A (en)

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