JPS6489361A - Photoelectronic integrated circuit device - Google Patents

Photoelectronic integrated circuit device

Info

Publication number
JPS6489361A
JPS6489361A JP62243619A JP24361987A JPS6489361A JP S6489361 A JPS6489361 A JP S6489361A JP 62243619 A JP62243619 A JP 62243619A JP 24361987 A JP24361987 A JP 24361987A JP S6489361 A JPS6489361 A JP S6489361A
Authority
JP
Japan
Prior art keywords
layer
type
schottky barrier
light absorption
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62243619A
Other languages
Japanese (ja)
Inventor
Hiroyuki Nobuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62243619A priority Critical patent/JPS6489361A/en
Publication of JPS6489361A publication Critical patent/JPS6489361A/en
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To form a sufficiently high Schottky barrier by providing a graded I-type InyGa1-yAs lattice matching layer between an I-type In0.47Ga0.53As light absorption layer and an I-type GaAs or I-type A GaAs Schottky barrier forming layer. CONSTITUTION:An I-type In0.47Ga0.53As light absorption layer 2 is formed on a semi-insulating substrate 1, and a graded I-type InyGa1-yAs (0<=y<=0.47) lattice matching layer 3 is so formed thereon as to reduce a y value toward its surface side. An I-type GaAs Schottky barrier forming layer 4 is formed thereon. An N-type GaAs active layer 5, a source electrode 6, a drain electrode 7, a gale electrode 8 and the electrode 9 of an MSM-PD(metal semiconductor metal photodiode) section for forming an FET is formed thereon. Since the Schottky barrier of the layer 2 having preferable light absorption characteristic is low, the layer 3 is interposed to the layer 4 having high Schottky barrier to match the lattice, and a high Schottky barrier is formed.
JP62243619A 1987-09-30 1987-09-30 Photoelectronic integrated circuit device Pending JPS6489361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62243619A JPS6489361A (en) 1987-09-30 1987-09-30 Photoelectronic integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62243619A JPS6489361A (en) 1987-09-30 1987-09-30 Photoelectronic integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6489361A true JPS6489361A (en) 1989-04-03

Family

ID=17106514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62243619A Pending JPS6489361A (en) 1987-09-30 1987-09-30 Photoelectronic integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6489361A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5115294A (en) * 1989-06-29 1992-05-19 At&T Bell Laboratories Optoelectronic integrated circuit
KR100718756B1 (en) * 2005-04-08 2007-05-15 엘에스전선 주식회사 Optical drop and add module for bi-directional communication
JP2016521457A (en) * 2013-04-18 2016-07-21 フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング High frequency conductor with improved conductivity

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5115294A (en) * 1989-06-29 1992-05-19 At&T Bell Laboratories Optoelectronic integrated circuit
KR100718756B1 (en) * 2005-04-08 2007-05-15 엘에스전선 주식회사 Optical drop and add module for bi-directional communication
JP2016521457A (en) * 2013-04-18 2016-07-21 フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング High frequency conductor with improved conductivity

Similar Documents

Publication Publication Date Title
EP0800219A3 (en) Heterojunction pin photodiode
KR850002178A (en) Photodetector integrated circuit device
GB1527069A (en) Photoelectric elements for a solid state image pickup device
CA1253944A (en) Integrated photodetector-amplifier device
KR100343814B1 (en) Photodetector using high electron mobility transistor
JPS6489361A (en) Photoelectronic integrated circuit device
KR940027201A (en) Optoelectronic integrated circuit
JPS5691477A (en) Semiconductor
JPS5414174A (en) Manufacture for semiconductor device
Boos et al. Planar, fully ion-implanted InP junction FETs with a nitride-registered gate metallization
Mitra et al. Optical effect in InAlAs/InGaAs/InP MODFET
JPS6461068A (en) Field-effect transistor
JPS57208174A (en) Semiconductor device
JPS6439073A (en) Compound semiconductor device
JPS6451666A (en) Semiconductor device and its manufacture
JPS6455878A (en) Photovoltaic type infrared-ray detector
JPS6439072A (en) Compound semiconductor device
JPS57159071A (en) Compound semiconductor device
FR2406895A1 (en) Avalanche photodiode of the homo:junction type - based on gallium indium arsenide phosphide layers on an indium phosphide substrate
JPS5538080A (en) Semiconductor device
TAKESHI et al. Semiconductor integrated circuit
JPS5793579A (en) Compound semiconductor device
Romero et al. A study on the negative photoresponse of AlGaAs/GaAs MODFETs
JPS6482676A (en) Iii-v compound semiconductor field-effect transistor and manufacture thereof
JPS6464373A (en) Semiconductor device for energy conversion use