JPS6489361A - Photoelectronic integrated circuit device - Google Patents
Photoelectronic integrated circuit deviceInfo
- Publication number
- JPS6489361A JPS6489361A JP62243619A JP24361987A JPS6489361A JP S6489361 A JPS6489361 A JP S6489361A JP 62243619 A JP62243619 A JP 62243619A JP 24361987 A JP24361987 A JP 24361987A JP S6489361 A JPS6489361 A JP S6489361A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- schottky barrier
- light absorption
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To form a sufficiently high Schottky barrier by providing a graded I-type InyGa1-yAs lattice matching layer between an I-type In0.47Ga0.53As light absorption layer and an I-type GaAs or I-type A GaAs Schottky barrier forming layer. CONSTITUTION:An I-type In0.47Ga0.53As light absorption layer 2 is formed on a semi-insulating substrate 1, and a graded I-type InyGa1-yAs (0<=y<=0.47) lattice matching layer 3 is so formed thereon as to reduce a y value toward its surface side. An I-type GaAs Schottky barrier forming layer 4 is formed thereon. An N-type GaAs active layer 5, a source electrode 6, a drain electrode 7, a gale electrode 8 and the electrode 9 of an MSM-PD(metal semiconductor metal photodiode) section for forming an FET is formed thereon. Since the Schottky barrier of the layer 2 having preferable light absorption characteristic is low, the layer 3 is interposed to the layer 4 having high Schottky barrier to match the lattice, and a high Schottky barrier is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62243619A JPS6489361A (en) | 1987-09-30 | 1987-09-30 | Photoelectronic integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62243619A JPS6489361A (en) | 1987-09-30 | 1987-09-30 | Photoelectronic integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6489361A true JPS6489361A (en) | 1989-04-03 |
Family
ID=17106514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62243619A Pending JPS6489361A (en) | 1987-09-30 | 1987-09-30 | Photoelectronic integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6489361A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5115294A (en) * | 1989-06-29 | 1992-05-19 | At&T Bell Laboratories | Optoelectronic integrated circuit |
KR100718756B1 (en) * | 2005-04-08 | 2007-05-15 | 엘에스전선 주식회사 | Optical drop and add module for bi-directional communication |
JP2016521457A (en) * | 2013-04-18 | 2016-07-21 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | High frequency conductor with improved conductivity |
-
1987
- 1987-09-30 JP JP62243619A patent/JPS6489361A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5115294A (en) * | 1989-06-29 | 1992-05-19 | At&T Bell Laboratories | Optoelectronic integrated circuit |
KR100718756B1 (en) * | 2005-04-08 | 2007-05-15 | 엘에스전선 주식회사 | Optical drop and add module for bi-directional communication |
JP2016521457A (en) * | 2013-04-18 | 2016-07-21 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | High frequency conductor with improved conductivity |
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