JPS5367374A - Manufacture of schottky barrier field effect transistor - Google Patents

Manufacture of schottky barrier field effect transistor

Info

Publication number
JPS5367374A
JPS5367374A JP14259576A JP14259576A JPS5367374A JP S5367374 A JPS5367374 A JP S5367374A JP 14259576 A JP14259576 A JP 14259576A JP 14259576 A JP14259576 A JP 14259576A JP S5367374 A JPS5367374 A JP S5367374A
Authority
JP
Japan
Prior art keywords
schottky barrier
manufacture
field effect
effect transistor
barrier field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14259576A
Other languages
Japanese (ja)
Other versions
JPS6126235B2 (en
Inventor
Masahide Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14259576A priority Critical patent/JPS5367374A/en
Publication of JPS5367374A publication Critical patent/JPS5367374A/en
Publication of JPS6126235B2 publication Critical patent/JPS6126235B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:A chip is directly mounted on the source electrode of a case to eliminate the need for a source bonding line, so that the excellent characteristic Schottky barrier FET can be manufactured easily at high yield without a complex process.
JP14259576A 1976-11-27 1976-11-27 Manufacture of schottky barrier field effect transistor Granted JPS5367374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14259576A JPS5367374A (en) 1976-11-27 1976-11-27 Manufacture of schottky barrier field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14259576A JPS5367374A (en) 1976-11-27 1976-11-27 Manufacture of schottky barrier field effect transistor

Publications (2)

Publication Number Publication Date
JPS5367374A true JPS5367374A (en) 1978-06-15
JPS6126235B2 JPS6126235B2 (en) 1986-06-19

Family

ID=15318948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14259576A Granted JPS5367374A (en) 1976-11-27 1976-11-27 Manufacture of schottky barrier field effect transistor

Country Status (1)

Country Link
JP (1) JPS5367374A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612742A (en) * 1979-07-11 1981-02-07 Fujitsu Ltd Semiconductor device
JPS5678267U (en) * 1979-11-07 1981-06-25
JPS5749252A (en) * 1980-09-09 1982-03-23 Matsushita Electronics Corp Manufacture of semiconductor device
JPS5771185A (en) * 1980-08-22 1982-05-01 Western Electric Co Iii-v group semiconductor device and method of fabricating same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612742A (en) * 1979-07-11 1981-02-07 Fujitsu Ltd Semiconductor device
JPS6217395B2 (en) * 1979-07-11 1987-04-17 Fujitsu Ltd
JPS5678267U (en) * 1979-11-07 1981-06-25
JPS5771185A (en) * 1980-08-22 1982-05-01 Western Electric Co Iii-v group semiconductor device and method of fabricating same
JPH0552058B2 (en) * 1980-08-22 1993-08-04 At & T Technologies Inc
JPS5749252A (en) * 1980-09-09 1982-03-23 Matsushita Electronics Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6126235B2 (en) 1986-06-19

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