JPS55127071A - High-output transistor amplifier circuit - Google Patents

High-output transistor amplifier circuit

Info

Publication number
JPS55127071A
JPS55127071A JP2920979A JP2920979A JPS55127071A JP S55127071 A JPS55127071 A JP S55127071A JP 2920979 A JP2920979 A JP 2920979A JP 2920979 A JP2920979 A JP 2920979A JP S55127071 A JPS55127071 A JP S55127071A
Authority
JP
Japan
Prior art keywords
circuit
stab
fet
output transistor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2920979A
Other languages
Japanese (ja)
Inventor
Junichi Sone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2920979A priority Critical patent/JPS55127071A/en
Publication of JPS55127071A publication Critical patent/JPS55127071A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Abstract

PURPOSE: To improve high frequency characteristic by combining bonding wires for drain or gate of adjacent FET's of those which constitute an MIC amplifier using high-output transistor collectively at the same spot on a matching circuit.
CONSTITUTION: An input matching circuit is constituted by forming a strip line 7, a stepped impedance conversion circuit 14 and a parallel stab 8 on an Al2O3 substrate 6. Next, a plural FET1∼4 of GaAs is fixed between the circuit 14 and the stab 8 to work as a high-output FET device 5 as a whole, and an electrode provided on these FET elements is connected to the circuit 14 and the stab 8. In this case, drain electrode bonding pads 15∼18 of the FET elements 1∼4 are connected to the circuit 14 individually by means of a metallic wire 13, however, gate bonding pads 9∼12 are connected onto the stab 8 by means of the wire 13 together with adjacent ones, thereby avoiding a deterioration in resultant rate of output power.
COPYRIGHT: (C)1980,JPO&Japio
JP2920979A 1979-03-13 1979-03-13 High-output transistor amplifier circuit Pending JPS55127071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2920979A JPS55127071A (en) 1979-03-13 1979-03-13 High-output transistor amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2920979A JPS55127071A (en) 1979-03-13 1979-03-13 High-output transistor amplifier circuit

Publications (1)

Publication Number Publication Date
JPS55127071A true JPS55127071A (en) 1980-10-01

Family

ID=12269796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2920979A Pending JPS55127071A (en) 1979-03-13 1979-03-13 High-output transistor amplifier circuit

Country Status (1)

Country Link
JP (1) JPS55127071A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211755A (en) * 1981-06-24 1982-12-25 Nec Corp Semiconductor device
JPS6361979A (en) * 1986-09-02 1988-03-18 Mitsubishi Electric Corp Radar transponder

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211755A (en) * 1981-06-24 1982-12-25 Nec Corp Semiconductor device
JPS6361979A (en) * 1986-09-02 1988-03-18 Mitsubishi Electric Corp Radar transponder

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