JPS6477178A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6477178A
JPS6477178A JP23413587A JP23413587A JPS6477178A JP S6477178 A JPS6477178 A JP S6477178A JP 23413587 A JP23413587 A JP 23413587A JP 23413587 A JP23413587 A JP 23413587A JP S6477178 A JPS6477178 A JP S6477178A
Authority
JP
Japan
Prior art keywords
electrode
ohmic
circuit element
drain electrode
ohmic electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23413587A
Other languages
Japanese (ja)
Other versions
JPH0680802B2 (en
Inventor
Nobuo Shiga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP23413587A priority Critical patent/JPH0680802B2/en
Publication of JPS6477178A publication Critical patent/JPS6477178A/en
Publication of JPH0680802B2 publication Critical patent/JPH0680802B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To protect a semiconductor device from degraded high frequency characteristics or reduced breakdown strength by a method wherein two ohmic electrodes are respectively provided with symmetrical circuit element sets and the ohmic electrode farther from a gate electrode is made in response to the deviation in the position of a patterning mask to serve as a drain electrode. CONSTITUTION:On the side of a first ohmic electrode 11, a circuit element XD1 for a drain electrode and a circuit element XS2 for a source electrode are provided beforehand, connected in parallel. On the side of a second ohmic electrode 12, a circuit element XS1 for a source electrode and a circuit element XD2 for a drain electrode are provided beforehand, connected in parallel. In a circuit of this design, when, owing to the deviation in the position of a patterning mask, the distance between a gate electrode and to first ohmic electrode 11 is longer than that between the gate electrode and the second ohmic electrode 12, the ohmic electrode 11 will be employed as a drain electrode using the circuit elements XD1 and XS1. This design enables the employment as a drain electrode of an ohmic electrode that is farther from a gate electrode.
JP23413587A 1987-09-18 1987-09-18 Semiconductor device Expired - Lifetime JPH0680802B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23413587A JPH0680802B2 (en) 1987-09-18 1987-09-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23413587A JPH0680802B2 (en) 1987-09-18 1987-09-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6477178A true JPS6477178A (en) 1989-03-23
JPH0680802B2 JPH0680802B2 (en) 1994-10-12

Family

ID=16966184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23413587A Expired - Lifetime JPH0680802B2 (en) 1987-09-18 1987-09-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0680802B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465850B1 (en) 1999-04-12 2002-10-15 Nec Corporation Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465850B1 (en) 1999-04-12 2002-10-15 Nec Corporation Semiconductor device

Also Published As

Publication number Publication date
JPH0680802B2 (en) 1994-10-12

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