JPS5553460A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5553460A JPS5553460A JP12700778A JP12700778A JPS5553460A JP S5553460 A JPS5553460 A JP S5553460A JP 12700778 A JP12700778 A JP 12700778A JP 12700778 A JP12700778 A JP 12700778A JP S5553460 A JPS5553460 A JP S5553460A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- window
- substrate
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To provide IC device having high switching speed and high voltage gain by forming the same conductive type high resistance layer and electric conductive layer as channels on a substrate and forming FET of enhancement and depression types. CONSTITUTION:N-type GaAs high resistance layer 2, n-type GaAs electrical conductive layer 3 are stacked on a semi insulative GaAs substrate 1 and the layer 3 is photoetched into mesa form and Au.Ge source, drain electrodes S, D are selectively formed and heat treated to metalize with the layer 3. Window 3E is provided on the layer 3 of gate part and coated with CVDSiO24 and window 3E is again opened and another window 3D is provided on other gate part. Gate film oxide 5E, 5D are formed by plasma oxidation method and the like through the windows 3E, 3D and Al electrodes 6E, 6D are attached. Thus, enhancement type FET as making the layer 2 channel and depression type FET as making the layer 3 channel are formed on a same substrate and a device of E/D system having high ability can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12700778A JPS5553460A (en) | 1978-10-16 | 1978-10-16 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12700778A JPS5553460A (en) | 1978-10-16 | 1978-10-16 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5553460A true JPS5553460A (en) | 1980-04-18 |
Family
ID=14949370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12700778A Pending JPS5553460A (en) | 1978-10-16 | 1978-10-16 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5553460A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5654214A (en) * | 1994-06-29 | 1997-08-05 | U.S. Philips Corporation | Method of manufacturing a semiconductor device having at least two field effect transistors with different pinch-off voltages |
-
1978
- 1978-10-16 JP JP12700778A patent/JPS5553460A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5654214A (en) * | 1994-06-29 | 1997-08-05 | U.S. Philips Corporation | Method of manufacturing a semiconductor device having at least two field effect transistors with different pinch-off voltages |
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