JPS6447071A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6447071A
JPS6447071A JP20547187A JP20547187A JPS6447071A JP S6447071 A JPS6447071 A JP S6447071A JP 20547187 A JP20547187 A JP 20547187A JP 20547187 A JP20547187 A JP 20547187A JP S6447071 A JPS6447071 A JP S6447071A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
base
region
formed
insulating film
parasitic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20547187A
Other versions
JPH0620072B2 (en )
Inventor
Shinichi Miyazaki
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE:To restrict the parasitic base effect of a bipolar transistor substantially by forming a high density impurity diffusion layer for base drawing onto a field insulating film. CONSTITUTION:An opening is provided on a bipolar transistor forming region to laminate a field insulating film 13 on an insulating film 11 for element isolation. In an extension of a signal crystal silicon epitaxial layer on the edge of an opening in the film 13, a P<+> diffusion layer 17 for base drawing is formed with its boundary in contact with a P-type base region 15 and an N-type collector region 16. Because a parasitic base region is not formed outside an intrinsic base region and the diffusion region 17 is formed in an epitaxial layer which is grown on the field insulating film 13, the parasitic capacity and base resistance are substantially reduced in comparison with those formed by the use of a polycrystalline silicon layer or formed directly on a semiconductor layer. The parasitic base effect is thereby restricted substantially.
JP20547187A 1987-08-18 1987-08-18 A method of manufacturing a semiconductor device Expired - Lifetime JPH0620072B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20547187A JPH0620072B2 (en) 1987-08-18 1987-08-18 A method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20547187A JPH0620072B2 (en) 1987-08-18 1987-08-18 A method of manufacturing a semiconductor device

Publications (2)

Publication Number Publication Date
JPS6447071A true true JPS6447071A (en) 1989-02-21
JPH0620072B2 JPH0620072B2 (en) 1994-03-16

Family

ID=16507410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20547187A Expired - Lifetime JPH0620072B2 (en) 1987-08-18 1987-08-18 A method of manufacturing a semiconductor device

Country Status (1)

Country Link
JP (1) JPH0620072B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19901069A1 (en) * 1999-01-14 2000-07-27 Daimler Chrysler Ag Internal combustion engine with controllable charge air Förderleistungseinstelleinheit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643754A (en) * 1979-09-17 1981-04-22 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS61188966A (en) * 1985-02-16 1986-08-22 Fujitsu Ltd Manufacture of high speed semiconductor device
JPS61296767A (en) * 1985-06-26 1986-12-27 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643754A (en) * 1979-09-17 1981-04-22 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS61188966A (en) * 1985-02-16 1986-08-22 Fujitsu Ltd Manufacture of high speed semiconductor device
JPS61296767A (en) * 1985-06-26 1986-12-27 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19901069A1 (en) * 1999-01-14 2000-07-27 Daimler Chrysler Ag Internal combustion engine with controllable charge air Förderleistungseinstelleinheit

Also Published As

Publication number Publication date Type
JPH0620072B2 (en) 1994-03-16 grant

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