JPS6447071A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6447071A JPS6447071A JP20547187A JP20547187A JPS6447071A JP S6447071 A JPS6447071 A JP S6447071A JP 20547187 A JP20547187 A JP 20547187A JP 20547187 A JP20547187 A JP 20547187A JP S6447071 A JPS6447071 A JP S6447071A
- Authority
- JP
- Japan
- Prior art keywords
- base
- region
- insulating film
- parasitic
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To restrict the parasitic base effect of a bipolar transistor substantially by forming a high density impurity diffusion layer for base drawing onto a field insulating film. CONSTITUTION:An opening is provided on a bipolar transistor forming region to laminate a field insulating film 13 on an insulating film 11 for element isolation. In an extension of a signal crystal silicon epitaxial layer on the edge of an opening in the film 13, a P<+> diffusion layer 17 for base drawing is formed with its boundary in contact with a P-type base region 15 and an N-type collector region 16. Because a parasitic base region is not formed outside an intrinsic base region and the diffusion region 17 is formed in an epitaxial layer which is grown on the field insulating film 13, the parasitic capacity and base resistance are substantially reduced in comparison with those formed by the use of a polycrystalline silicon layer or formed directly on a semiconductor layer. The parasitic base effect is thereby restricted substantially.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62205471A JPH0620072B2 (en) | 1987-08-18 | 1987-08-18 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62205471A JPH0620072B2 (en) | 1987-08-18 | 1987-08-18 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6447071A true JPS6447071A (en) | 1989-02-21 |
| JPH0620072B2 JPH0620072B2 (en) | 1994-03-16 |
Family
ID=16507410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62205471A Expired - Lifetime JPH0620072B2 (en) | 1987-08-18 | 1987-08-18 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0620072B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19901069A1 (en) * | 1999-01-14 | 2000-07-27 | Daimler Chrysler Ag | Internal combustion engine with controllable charge air delivery capacity setting unit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5643754A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS61188966A (en) * | 1985-02-16 | 1986-08-22 | Fujitsu Ltd | Manufacture of high speed semiconductor device |
| JPS61296767A (en) * | 1985-06-26 | 1986-12-27 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-08-18 JP JP62205471A patent/JPH0620072B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5643754A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS61188966A (en) * | 1985-02-16 | 1986-08-22 | Fujitsu Ltd | Manufacture of high speed semiconductor device |
| JPS61296767A (en) * | 1985-06-26 | 1986-12-27 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19901069A1 (en) * | 1999-01-14 | 2000-07-27 | Daimler Chrysler Ag | Internal combustion engine with controllable charge air delivery capacity setting unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0620072B2 (en) | 1994-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5586151A (en) | Manufacture of semiconductor integrated circuit | |
| JPS645070A (en) | Vertical insulated gate field effect transistor | |
| JPS6447071A (en) | Semiconductor device and manufacture thereof | |
| JPS5643754A (en) | Manufacture of semiconductor device | |
| JPS55111171A (en) | Field-effect semiconductor device | |
| JPS5596675A (en) | Semiconductor device | |
| JPS5617071A (en) | Semiconductor device | |
| JPS56108255A (en) | Semiconductor integrated circuit | |
| GB1433667A (en) | Bipolar transistors | |
| JPS55102263A (en) | Semiconductor integrated circuit | |
| JPS6476756A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| JPS55118665A (en) | Semiconductor device | |
| JPS6431452A (en) | Semiconductor integrated circuit containing current mirror | |
| JPS572580A (en) | Semiconductor device | |
| JPS57157567A (en) | Vertical type p-n-p transistor | |
| GB1252293A (en) | ||
| JPS55115361A (en) | Semiconductor device | |
| JPS5698857A (en) | Complex integrated circuit device | |
| JPS6427221A (en) | Manufacture of laminated type semiconductor device | |
| JPH04152533A (en) | Semiconductor device | |
| JPS57143855A (en) | Semiconductor integrated circuit device | |
| JPS5541787A (en) | Semiconductor device | |
| JPS5529175A (en) | Planar type transistor | |
| JPS5617055A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| JPS5632763A (en) | Semiconductor device |