JPS5720468A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5720468A JPS5720468A JP9434880A JP9434880A JPS5720468A JP S5720468 A JPS5720468 A JP S5720468A JP 9434880 A JP9434880 A JP 9434880A JP 9434880 A JP9434880 A JP 9434880A JP S5720468 A JPS5720468 A JP S5720468A
- Authority
- JP
- Japan
- Prior art keywords
- base
- emitter
- sio2
- layer
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000009279 wet oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To prevent drop of gain in the high frequency range by attaching a base electrode to a base electrode drawing layer brought into contact with the side of a base layer. CONSTITUTION:An Si3N4 21 is applied on a collector substrate 20 as a mask and it undergoes a wet oxidation to make SiO2 22. After the removal 21, impurities are introduced thereinto to form a base 25 and an emitter 26. The SiO2 22 is etched by a given depth to expose each side of the layers 26 and 25 while the base-collector junction is left covered with the layer 22. It is covered with a conductivity type poly Si 27 identical to the base and the poly Si is removed from the surface of the emitter 26 and the side of base-emitter junction with a mask applied so that it is left only connected to the side of the base 25. A base connection layer 29 is provided by doping at a low temperature and then, a coat of SiO2 is applied and an opening is etched therethrough to provide electrodes 31 and 32 along with an electrode 33 attached to the substrate 20. With such an arrangement, the ratio of cercumferential length of the emitter to the area of the collector can be maximized with limited area of the emitter thereby preventing drop of the gain in the high frequency range.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9434880A JPS5720468A (en) | 1980-07-10 | 1980-07-10 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9434880A JPS5720468A (en) | 1980-07-10 | 1980-07-10 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5720468A true JPS5720468A (en) | 1982-02-02 |
| JPH0130307B2 JPH0130307B2 (en) | 1989-06-19 |
Family
ID=14107773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9434880A Granted JPS5720468A (en) | 1980-07-10 | 1980-07-10 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5720468A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS594165A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Semiconductor device |
| JPS62112279U (en) * | 1985-12-28 | 1987-07-17 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5141317A (en) * | 1974-09-19 | 1976-04-07 | Canon Kk | Jukiginen no seizoho |
| JPS52103971A (en) * | 1976-02-26 | 1977-08-31 | Nec Corp | Semiconductor device |
| JPS5328384A (en) * | 1976-08-27 | 1978-03-16 | Fujitsu Ltd | Production method of semiconductor device |
-
1980
- 1980-07-10 JP JP9434880A patent/JPS5720468A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5141317A (en) * | 1974-09-19 | 1976-04-07 | Canon Kk | Jukiginen no seizoho |
| JPS52103971A (en) * | 1976-02-26 | 1977-08-31 | Nec Corp | Semiconductor device |
| JPS5328384A (en) * | 1976-08-27 | 1978-03-16 | Fujitsu Ltd | Production method of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS594165A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Semiconductor device |
| JPS62112279U (en) * | 1985-12-28 | 1987-07-17 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0130307B2 (en) | 1989-06-19 |
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