FR2309979A1 - Semiconductor device with switching elements - has connecting points, each with protective coating of silcon dioxide (NL011176) - Google Patents

Semiconductor device with switching elements - has connecting points, each with protective coating of silcon dioxide (NL011176)

Info

Publication number
FR2309979A1
FR2309979A1 FR7612367A FR7612367A FR2309979A1 FR 2309979 A1 FR2309979 A1 FR 2309979A1 FR 7612367 A FR7612367 A FR 7612367A FR 7612367 A FR7612367 A FR 7612367A FR 2309979 A1 FR2309979 A1 FR 2309979A1
Authority
FR
France
Prior art keywords
connecting points
switching elements
protective coating
semiconductor device
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7612367A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
National Cash Register Co
Original Assignee
NCR Corp
National Cash Register Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp, National Cash Register Co filed Critical NCR Corp
Publication of FR2309979A1 publication Critical patent/FR2309979A1/en
Withdrawn legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

The switching elements are formed in, or on, the semiconductor substrate and are connected with outside connecting leads. Each connecting point (322, 320) is coated with a protective layer of silicon dioxide (340), covering the connecting point and the directly adjacent part of the respective lead (331, 332). The protective coating is covered or enclosed by a plastics layer (360). Preferably the leads are of aluminium and the connecting points of aluminium pads. The integrated circuit elements may be coated by a doped silicon dioxide passivating layer not converting the connecting points. The silicon dioxide protective layer (340) may be undoped and may cover the entire passivating layer.
FR7612367A 1975-04-28 1976-04-27 Semiconductor device with switching elements - has connecting points, each with protective coating of silcon dioxide (NL011176) Withdrawn FR2309979A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57257675A 1975-04-28 1975-04-28

Publications (1)

Publication Number Publication Date
FR2309979A1 true FR2309979A1 (en) 1976-11-26

Family

ID=24288458

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7612367A Withdrawn FR2309979A1 (en) 1975-04-28 1976-04-27 Semiconductor device with switching elements - has connecting points, each with protective coating of silcon dioxide (NL011176)

Country Status (5)

Country Link
JP (1) JPS51136283A (en)
DE (1) DE2618026A1 (en)
FR (1) FR2309979A1 (en)
IT (1) IT1063008B (en)
NL (1) NL7604289A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53103375A (en) * 1977-02-22 1978-09-08 Toshiba Corp Semiconductor device
JPS5623759A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Resin-sealed semiconductor device and manufacture thereof
WO1982003727A1 (en) * 1981-04-21 1982-10-28 Seiichiro Aigoo Method of making a semiconductor device having a projecting,plated electrode
JPS6320845A (en) * 1986-07-14 1988-01-28 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit
JPH0499383A (en) * 1990-08-17 1992-03-31 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
IT1063008B (en) 1985-02-11
DE2618026A1 (en) 1976-11-04
NL7604289A (en) 1976-11-01
JPS51136283A (en) 1976-11-25

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