JPS568850A - Semiconductor device with metal projection - Google Patents

Semiconductor device with metal projection

Info

Publication number
JPS568850A
JPS568850A JP8464279A JP8464279A JPS568850A JP S568850 A JPS568850 A JP S568850A JP 8464279 A JP8464279 A JP 8464279A JP 8464279 A JP8464279 A JP 8464279A JP S568850 A JPS568850 A JP S568850A
Authority
JP
Japan
Prior art keywords
insulation film
terminal
projection
constitution
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8464279A
Other languages
Japanese (ja)
Other versions
JPS5937579B2 (en
Inventor
Kenzo Hatada
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8464279A priority Critical patent/JPS5937579B2/en
Publication of JPS568850A publication Critical patent/JPS568850A/en
Publication of JPS5937579B2 publication Critical patent/JPS5937579B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent an insulation film from cracking through pressuring during connection with an external lead wire by a constitution in which an electrode terminal region is not covered with an insulation film on it. CONSTITUTION:On a semiconductor substrate 21 an insulation film 24 is applied to protect a metal wiring pattern, and over an electrode terminal 23 of the wiring pattern a wider opening than the terminal 23 are formed. Next on this opening a barrier metal layer 26 which is wider than this opening is formed. Next over the layer 26 a metal projection 27 is selectively formed. Because there is not insulating film 24 between the projection 27 and the terminal 23 in this constitution, when connection between an external lead wire and the projection 27 is performed no cracking in the insulation film 24 due to deformation of the terminal 23 occurs.
JP8464279A 1979-07-04 1979-07-04 Semiconductor device with metal protrusions Expired JPS5937579B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8464279A JPS5937579B2 (en) 1979-07-04 1979-07-04 Semiconductor device with metal protrusions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8464279A JPS5937579B2 (en) 1979-07-04 1979-07-04 Semiconductor device with metal protrusions

Publications (2)

Publication Number Publication Date
JPS568850A true JPS568850A (en) 1981-01-29
JPS5937579B2 JPS5937579B2 (en) 1984-09-11

Family

ID=13836338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8464279A Expired JPS5937579B2 (en) 1979-07-04 1979-07-04 Semiconductor device with metal protrusions

Country Status (1)

Country Link
JP (1) JPS5937579B2 (en)

Also Published As

Publication number Publication date
JPS5937579B2 (en) 1984-09-11

Similar Documents

Publication Publication Date Title
JPS5425178A (en) Manufacture for semiconductor device
JPS5756958A (en) Semiconductor device
JPS568850A (en) Semiconductor device with metal projection
JPS56148848A (en) Beam lead type semiconductor device
JPS52143785A (en) Semiconductor device
JPS51114069A (en) Semiconductor device
JPS5267963A (en) Manufacture of semiconductor unit
JPS5368970A (en) Solder electrode structure
JPS5740967A (en) Integrated circuit device
JPS5593268A (en) Manufacture of semiconductor device
JPS5710951A (en) Semiconductor device
JPS56158466A (en) Semiconductor device
JPS5325354A (en) Semiconductor device
JPS5211772A (en) Semiconductor device
JPS54124674A (en) Semiconductor device
JPS5365063A (en) Semiconductor device
JPS546775A (en) Semiconductor device featuring stepped electrode structure
JPS5635470A (en) Semiconductor device
JPS5226167A (en) Connection method of the aluminium wires with the layer conductive
JPS5375763A (en) Manufacture for semiconductor device
EP0115287A3 (en) Semiconductor device including a metal silicide
JPS5418673A (en) Semiconductor device and its manufacture
JPS5211864A (en) Semiconductor device
JPS5630744A (en) Semiconductor device
JPS5399880A (en) Manufacture of circuit element structure