JPS57133657A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57133657A
JPS57133657A JP2071481A JP2071481A JPS57133657A JP S57133657 A JPS57133657 A JP S57133657A JP 2071481 A JP2071481 A JP 2071481A JP 2071481 A JP2071481 A JP 2071481A JP S57133657 A JPS57133657 A JP S57133657A
Authority
JP
Japan
Prior art keywords
substrate
contact sections
diffusion regions
chip
source line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2071481A
Other languages
Japanese (ja)
Inventor
Hiroshi Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2071481A priority Critical patent/JPS57133657A/en
Publication of JPS57133657A publication Critical patent/JPS57133657A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To protect the device from surge breakdown, and to contract the size of a chip by forming metallic wiring, which shapes a Schottky barrier between itself and a substrate, between a diffusion region connected to an input/output pad and a diffusion region connected to a source line. CONSTITUTION:The input pad 1 and the source line 4 are each connected to the diffusion regions 2, 5 through contact sections 3, 6, and formed onto the Si substrate. The metallic wiring 15 consisting of a metal such as Al, to which the Schottky junction surface A is shaped, is formed onto the substrate between diffusion regions 8, 10 forming the contact sections. When high voltage is applied to the input pad 1, currents flowing between the diffusion regions 8, 10 can largely be decreased because an N<+> layer is not induced on the surface of the substrate between the contact sections 3, 6 and the resistance of the surface is increased. Consequently, the surge breakdown can be prevented, and the size of the chip can be contracted.
JP2071481A 1981-02-12 1981-02-12 Semiconductor device Pending JPS57133657A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2071481A JPS57133657A (en) 1981-02-12 1981-02-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2071481A JPS57133657A (en) 1981-02-12 1981-02-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57133657A true JPS57133657A (en) 1982-08-18

Family

ID=12034817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2071481A Pending JPS57133657A (en) 1981-02-12 1981-02-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57133657A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04343466A (en) * 1991-05-21 1992-11-30 Matsushita Electron Corp Semiconductor integrated circuit device
JP2021522692A (en) * 2018-05-02 2021-08-30 ウニヴェルシテ カトリック ド ルヴァンＵｎｉｖｅｒｓｉｔｅ Ｃａｔｈｏｌｉｑｕｅ Ｄｅ Ｌｏｕｖａｉｎ Integrated circuit devices and their manufacturing methods

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04343466A (en) * 1991-05-21 1992-11-30 Matsushita Electron Corp Semiconductor integrated circuit device
JP2021522692A (en) * 2018-05-02 2021-08-30 ウニヴェルシテ カトリック ド ルヴァンＵｎｉｖｅｒｓｉｔｅ Ｃａｔｈｏｌｉｑｕｅ Ｄｅ Ｌｏｕｖａｉｎ Integrated circuit devices and their manufacturing methods

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