JPS57190359A - Protecting device for semiconductor - Google Patents

Protecting device for semiconductor

Info

Publication number
JPS57190359A
JPS57190359A JP56075152A JP7515281A JPS57190359A JP S57190359 A JPS57190359 A JP S57190359A JP 56075152 A JP56075152 A JP 56075152A JP 7515281 A JP7515281 A JP 7515281A JP S57190359 A JPS57190359 A JP S57190359A
Authority
JP
Japan
Prior art keywords
pad
gate
circuit
diodes
parallelly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56075152A
Other languages
Japanese (ja)
Inventor
Masaru Katagiri
Tetsuo Akisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56075152A priority Critical patent/JPS57190359A/en
Publication of JPS57190359A publication Critical patent/JPS57190359A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To protect P-N junctions from destruction by a method wherein several diffused regions are parallelly provided between a pad and an MOS input circuit gate wherein breakdown voltages are gradually lower toward the gate while time constants for regions are gradually smaller toward the pad. CONSTITUTION:A plurality of diffusion produced resistors R is provided between a bonding signal input pad 1 and the gate of an MOS input circuit 2. That is N<+> type impurity doped regions 41-43 are formed on a P type Si substrate similar in construction to the circut 2, the resultant P-N junctions working to realize equivalence for parallelly grounded circuits of Zener diodes D1-D3. Diodes diffusion depth is smaller toward the circuit while gate insulation resistance is larger toward the circuit. Time constants of the circuits of capacitors CD1-CD3 and resistors R parallelly connected to the diodes are smaller toward the pad 1. This construction enhances the buffer function against surge voltages and helps current dispersion.
JP56075152A 1981-05-19 1981-05-19 Protecting device for semiconductor Pending JPS57190359A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56075152A JPS57190359A (en) 1981-05-19 1981-05-19 Protecting device for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56075152A JPS57190359A (en) 1981-05-19 1981-05-19 Protecting device for semiconductor

Publications (1)

Publication Number Publication Date
JPS57190359A true JPS57190359A (en) 1982-11-22

Family

ID=13567939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56075152A Pending JPS57190359A (en) 1981-05-19 1981-05-19 Protecting device for semiconductor

Country Status (1)

Country Link
JP (1) JPS57190359A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081868A (en) * 1983-10-11 1985-05-09 Nec Corp Semiconductor device
US4720737A (en) * 1983-06-30 1988-01-19 Fujitsu Limited Semiconductor device having a protection circuit with lateral bipolar transistor
JPS63260161A (en) * 1987-04-17 1988-10-27 Nec Corp Semiconductor input protective device
US4893159A (en) * 1985-09-25 1990-01-09 Kabushiki Kaisha Toshiba Protected MOS transistor circuit
US4980741A (en) * 1989-02-10 1990-12-25 General Electric Company MOS protection device
US5281841A (en) * 1990-04-06 1994-01-25 U.S. Philips Corporation ESD protection element for CMOS integrated circuit
EP0621637A1 (en) * 1993-04-22 1994-10-26 Fuji Electric Co. Ltd. Protective diode for transistor
EP1061581A1 (en) * 1999-06-15 2000-12-20 STMicroelectronics S.A. Protection and filtering circuit
US6304126B1 (en) 1997-09-29 2001-10-16 Stmicroelectronics S.A. Protection circuit that can be associated with a filter

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720737A (en) * 1983-06-30 1988-01-19 Fujitsu Limited Semiconductor device having a protection circuit with lateral bipolar transistor
JPS6081868A (en) * 1983-10-11 1985-05-09 Nec Corp Semiconductor device
JPH0510829B2 (en) * 1983-10-11 1993-02-10 Nippon Electric Co
US4893159A (en) * 1985-09-25 1990-01-09 Kabushiki Kaisha Toshiba Protected MOS transistor circuit
JPS63260161A (en) * 1987-04-17 1988-10-27 Nec Corp Semiconductor input protective device
US4980741A (en) * 1989-02-10 1990-12-25 General Electric Company MOS protection device
US5281841A (en) * 1990-04-06 1994-01-25 U.S. Philips Corporation ESD protection element for CMOS integrated circuit
EP0621637A1 (en) * 1993-04-22 1994-10-26 Fuji Electric Co. Ltd. Protective diode for transistor
US5561313A (en) * 1993-04-22 1996-10-01 Fuji Electric Co., Ltd. Protective diode for transistor
US6304126B1 (en) 1997-09-29 2001-10-16 Stmicroelectronics S.A. Protection circuit that can be associated with a filter
EP1061581A1 (en) * 1999-06-15 2000-12-20 STMicroelectronics S.A. Protection and filtering circuit
FR2795237A1 (en) * 1999-06-15 2000-12-22 St Microelectronics Sa PROTECTION AND FILTERING CIRCUIT

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