JPS52116082A - Preparation of mos type semiconductor device - Google Patents
Preparation of mos type semiconductor deviceInfo
- Publication number
- JPS52116082A JPS52116082A JP3291476A JP3291476A JPS52116082A JP S52116082 A JPS52116082 A JP S52116082A JP 3291476 A JP3291476 A JP 3291476A JP 3291476 A JP3291476 A JP 3291476A JP S52116082 A JPS52116082 A JP S52116082A
- Authority
- JP
- Japan
- Prior art keywords
- preparation
- semiconductor device
- type semiconductor
- mos type
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce a junction leak by forming a thin N type zone on a P type substrate by self-matching, opening a contact hole in the zone to form deeply a N+ zone through a polysilicon film and forming an aluminium wiring film on the polysilicon film.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3291476A JPS52116082A (en) | 1976-03-25 | 1976-03-25 | Preparation of mos type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3291476A JPS52116082A (en) | 1976-03-25 | 1976-03-25 | Preparation of mos type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52116082A true JPS52116082A (en) | 1977-09-29 |
Family
ID=12372154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3291476A Pending JPS52116082A (en) | 1976-03-25 | 1976-03-25 | Preparation of mos type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52116082A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5559773A (en) * | 1978-10-27 | 1980-05-06 | Hitachi Ltd | Method of fabricating mis semiconductor device |
JPS5635470A (en) * | 1979-08-30 | 1981-04-08 | Nec Corp | Semiconductor device |
JPS5650570A (en) * | 1979-10-01 | 1981-05-07 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5664466A (en) * | 1979-10-31 | 1981-06-01 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5787174A (en) * | 1980-11-20 | 1982-05-31 | Seiko Epson Corp | Semiconductor integrated circuit device |
JPS61181147A (en) * | 1985-02-06 | 1986-08-13 | Nec Corp | Manufacture of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4914792A (en) * | 1972-04-14 | 1974-02-08 | ||
JPS50106588A (en) * | 1974-01-29 | 1975-08-22 |
-
1976
- 1976-03-25 JP JP3291476A patent/JPS52116082A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4914792A (en) * | 1972-04-14 | 1974-02-08 | ||
JPS50106588A (en) * | 1974-01-29 | 1975-08-22 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5559773A (en) * | 1978-10-27 | 1980-05-06 | Hitachi Ltd | Method of fabricating mis semiconductor device |
JPS5635470A (en) * | 1979-08-30 | 1981-04-08 | Nec Corp | Semiconductor device |
JPS5650570A (en) * | 1979-10-01 | 1981-05-07 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5664466A (en) * | 1979-10-31 | 1981-06-01 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5787174A (en) * | 1980-11-20 | 1982-05-31 | Seiko Epson Corp | Semiconductor integrated circuit device |
JPS61181147A (en) * | 1985-02-06 | 1986-08-13 | Nec Corp | Manufacture of semiconductor device |
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