JPS55128857A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS55128857A
JPS55128857A JP3547179A JP3547179A JPS55128857A JP S55128857 A JPS55128857 A JP S55128857A JP 3547179 A JP3547179 A JP 3547179A JP 3547179 A JP3547179 A JP 3547179A JP S55128857 A JPS55128857 A JP S55128857A
Authority
JP
Japan
Prior art keywords
layer
type
emitter
transistor
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3547179A
Other languages
Japanese (ja)
Inventor
Kensuke Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3547179A priority Critical patent/JPS55128857A/en
Publication of JPS55128857A publication Critical patent/JPS55128857A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Abstract

PURPOSE:To eliminate current breakage of an integrated circuit device owing to an emitter ground-fault by connecting a current limiter to the collector of a bipolar transistor as an electrostatic breakdown element or sufficiently reducing the hFE of the transistor. CONSTITUTION:N-type layers 14, 16 isolated with a P<+>-type layer are formed on the surface of a P-type silicon substrate, a P-type base, an N<+>-type emitter 20 and an N<+>-type collector connecting layer 22 are formed on the layer 14, and a P-type resistance layer 24 is formed on the layer 16. There are formed on a SiO2 film 26 a conductive layer 28 ohmic contact with one end of the layer 24, a conductive layer 30 connecting the other end of the layer 24 and the layer 22, a conductive layer 32 ohmic contact with the emitter 20, and a conductive layer 34 for shorting between the emitter and the base 18. The layer 28 is connected to an operation potential +Vcc, the layer 32 is connected to an input or output terminal T, and the layer 34 is connected to a circuit 36 to be protected. Even when the terminal T is now grounded, a resistor R1 is selected to eliminate the breakdown of a transistor. Or, it is also effective to alter the flat shape of the emitter 20 to reduce the injection efficiency so as to reduce the hFE of the transistor.
JP3547179A 1979-03-28 1979-03-28 Integrated circuit device Pending JPS55128857A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3547179A JPS55128857A (en) 1979-03-28 1979-03-28 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3547179A JPS55128857A (en) 1979-03-28 1979-03-28 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPS55128857A true JPS55128857A (en) 1980-10-06

Family

ID=12442686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3547179A Pending JPS55128857A (en) 1979-03-28 1979-03-28 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPS55128857A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4543593A (en) * 1982-09-14 1985-09-24 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor protective device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49114380A (en) * 1973-02-28 1974-10-31

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49114380A (en) * 1973-02-28 1974-10-31

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4543593A (en) * 1982-09-14 1985-09-24 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor protective device

Similar Documents

Publication Publication Date Title
JP3342918B2 (en) Diode structure to protect pads against electrostatic discharge in integrated circuits
JPS5574168A (en) Pnpn switch
KR970705836A (en) ELECTROSTATIC DISCHARGE PROTECTION CIRCULT
JPH06196634A (en) Depletion control type separation stage
ATE107440T1 (en) MONOLITHIC INTEGRATED TRANSISTOR CIRCUIT FOR LIMITING POSITIVE OVERVOLTAGE.
JPS54157092A (en) Semiconductor integrated circuit device
EP0103306B1 (en) Semiconductor protective device
KR870003578A (en) MOS transistor circuit
KR890011095A (en) Integrated circuit protection structure
KR830009654A (en) Integrated circuit device protection circuit
JP2505652B2 (en) Low trigger voltage SCR protection device and structure
JPS62183184A (en) Mos integrated circuit
JPS5679463A (en) Semiconductor integrated circuit
JPS55128857A (en) Integrated circuit device
EP0066041B1 (en) Semiconductor device including resistive elements
JPS5580350A (en) Semiconductor integrated circuit
JPS5565453A (en) Semiconductor device
JPS6211787B2 (en)
KR20010080699A (en) Analogue switch
KR100226741B1 (en) Electrostatic discharge protection circuit
JP2656045B2 (en) Electrostatic discharge protection circuit
JPS5591173A (en) Semiconductor integrated circuit device
JPS59111351A (en) Protective circuit for input
KR970018516A (en) Enhanced Bipolar SCR Triggering for Fast Bipolar / BICMOS Circuit ESD Protection
JPS55157240A (en) Semiconductor device