JPS53147473A - Production of mis type semiconductor device - Google Patents

Production of mis type semiconductor device

Info

Publication number
JPS53147473A
JPS53147473A JP6234577A JP6234577A JPS53147473A JP S53147473 A JPS53147473 A JP S53147473A JP 6234577 A JP6234577 A JP 6234577A JP 6234577 A JP6234577 A JP 6234577A JP S53147473 A JPS53147473 A JP S53147473A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
type semiconductor
mis type
wiring layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6234577A
Other languages
Japanese (ja)
Inventor
Yoshihiro Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6234577A priority Critical patent/JPS53147473A/en
Publication of JPS53147473A publication Critical patent/JPS53147473A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To produce MIS devices of small sheet resistace of wiring layers by shallowforming sources, drains and wiring layers through diffusion.
JP6234577A 1977-05-27 1977-05-27 Production of mis type semiconductor device Pending JPS53147473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6234577A JPS53147473A (en) 1977-05-27 1977-05-27 Production of mis type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6234577A JPS53147473A (en) 1977-05-27 1977-05-27 Production of mis type semiconductor device

Publications (1)

Publication Number Publication Date
JPS53147473A true JPS53147473A (en) 1978-12-22

Family

ID=13197433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6234577A Pending JPS53147473A (en) 1977-05-27 1977-05-27 Production of mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS53147473A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157240A (en) * 1979-05-25 1980-12-06 Nec Corp Semiconductor device
US5326713A (en) * 1992-09-04 1994-07-05 Taiwan Semiconductor Manufacturies Company Buried contact process
US5814541A (en) * 1987-12-04 1998-09-29 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010085A (en) * 1973-05-23 1975-02-01
JPS522289A (en) * 1975-06-24 1977-01-08 Hitachi Ltd Method of manufacturing insulation gate-type semiconductor integration circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010085A (en) * 1973-05-23 1975-02-01
JPS522289A (en) * 1975-06-24 1977-01-08 Hitachi Ltd Method of manufacturing insulation gate-type semiconductor integration circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157240A (en) * 1979-05-25 1980-12-06 Nec Corp Semiconductor device
US5814541A (en) * 1987-12-04 1998-09-29 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device
US5326713A (en) * 1992-09-04 1994-07-05 Taiwan Semiconductor Manufacturies Company Buried contact process

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