JPS56150866A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56150866A JPS56150866A JP5413580A JP5413580A JPS56150866A JP S56150866 A JPS56150866 A JP S56150866A JP 5413580 A JP5413580 A JP 5413580A JP 5413580 A JP5413580 A JP 5413580A JP S56150866 A JPS56150866 A JP S56150866A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- fet
- film
- masks
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To highly integrate an Si gate type FET by forming an insulating film on the side surface of a gate electrode and opening a contacting hole with the insulating film as a substantial mask, thereby preventing the shortcircuit of the electrode. CONSTITUTION:The patterns of the gate electrode 4a and the wire 4b of an FET are formed of nitrided film masks 9, 10 by etching polysilicon so that the nitrided film is overhung. After ions are then injected to source and drain regions, a nitrided film is accumulated, the surface layer is removed by sputtering, and the nitrided film 4 is retained at the side surface of the polysilicon. Subsequently, various steps of expanding the injected layer, accumulating an interlayer film 17, forming a contacting hole 18 with resist masks 19, 19a and forming aluminum electrodes are sequentially performed to form an FET. Since the films 9, 14 becomes masks even if the resist layer 19a is formed inside the gate structure, the electrode 4a is not exposed, thereby preventing the shortcircuit of the aluminum electrode. Accordingly, it can reduce the mask allowance margin, thereby highly integrating the FET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5413580A JPS56150866A (en) | 1980-04-25 | 1980-04-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5413580A JPS56150866A (en) | 1980-04-25 | 1980-04-25 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56150866A true JPS56150866A (en) | 1981-11-21 |
Family
ID=12962128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5413580A Pending JPS56150866A (en) | 1980-04-25 | 1980-04-25 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56150866A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58118272U (en) * | 1982-02-05 | 1983-08-12 | 株式会社明電舎 | Leak-proof water turbine casing |
| JPS5923563A (en) * | 1982-07-30 | 1984-02-07 | Toshiba Corp | Manufacture of semiconductor device |
| JPH0316226A (en) * | 1989-06-14 | 1991-01-24 | Matsushita Electron Corp | Manufacture of mos field-effect transistor |
-
1980
- 1980-04-25 JP JP5413580A patent/JPS56150866A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58118272U (en) * | 1982-02-05 | 1983-08-12 | 株式会社明電舎 | Leak-proof water turbine casing |
| JPS6332369Y2 (en) * | 1982-02-05 | 1988-08-29 | ||
| JPS5923563A (en) * | 1982-07-30 | 1984-02-07 | Toshiba Corp | Manufacture of semiconductor device |
| JPH0316226A (en) * | 1989-06-14 | 1991-01-24 | Matsushita Electron Corp | Manufacture of mos field-effect transistor |
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