JPS57178373A - Schottky gate field-effect transistor - Google Patents
Schottky gate field-effect transistorInfo
- Publication number
- JPS57178373A JPS57178373A JP6490181A JP6490181A JPS57178373A JP S57178373 A JPS57178373 A JP S57178373A JP 6490181 A JP6490181 A JP 6490181A JP 6490181 A JP6490181 A JP 6490181A JP S57178373 A JPS57178373 A JP S57178373A
- Authority
- JP
- Japan
- Prior art keywords
- resist film
- operating layer
- semi
- heat treatment
- contact resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To form gate, source and drain electrode through the same process by using the same metal by bringing the carrier concentration of an operating layer on a semi-insulating substrate to 10<18>cm<-3> or higher except a channel region. CONSTITUTION:The N type GaAs crystal operating layer 9 is formed onto the semi-insulating GaAs crystal substrate 1. A resist film 10 is shaped onto the operating layer 9, the ions of <28>Si<+> are implanted using the resist film 10 as a mask, the resist film 10 is removed, and N type high impurity layers 7, 8 are formed through annealing. Aluminum is evaporated, and the gate 3, source 4 and drain 5 electrodes are shaped by empolying lithography technique. Heat treatment is executed in order to reduce ohmic contact resistance. When the impurity concentration of the surfaces of the layers 7, 8 is 10<18>cm<-3> or higher, sufficiently low contact resistance can be obtained through heat treatment at a comparatively low temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6490181A JPS57178373A (en) | 1981-04-27 | 1981-04-27 | Schottky gate field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6490181A JPS57178373A (en) | 1981-04-27 | 1981-04-27 | Schottky gate field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57178373A true JPS57178373A (en) | 1982-11-02 |
Family
ID=13271428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6490181A Pending JPS57178373A (en) | 1981-04-27 | 1981-04-27 | Schottky gate field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57178373A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56131965A (en) * | 1980-02-15 | 1981-10-15 | Siemens Ag | Method of producing semiconductor device |
| JPS57178377A (en) * | 1981-04-17 | 1982-11-02 | Ibm | Method of producing field effect transistor |
-
1981
- 1981-04-27 JP JP6490181A patent/JPS57178373A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56131965A (en) * | 1980-02-15 | 1981-10-15 | Siemens Ag | Method of producing semiconductor device |
| JPS57178377A (en) * | 1981-04-17 | 1982-11-02 | Ibm | Method of producing field effect transistor |
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