JPS6441270A - Manufacture of field effect transistor - Google Patents

Manufacture of field effect transistor

Info

Publication number
JPS6441270A
JPS6441270A JP19749087A JP19749087A JPS6441270A JP S6441270 A JPS6441270 A JP S6441270A JP 19749087 A JP19749087 A JP 19749087A JP 19749087 A JP19749087 A JP 19749087A JP S6441270 A JPS6441270 A JP S6441270A
Authority
JP
Japan
Prior art keywords
mask
high concentration
concentration impurity
type high
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19749087A
Other languages
Japanese (ja)
Other versions
JP2541230B2 (en
Inventor
Takafumi Imamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62197490A priority Critical patent/JP2541230B2/en
Publication of JPS6441270A publication Critical patent/JPS6441270A/en
Application granted granted Critical
Publication of JP2541230B2 publication Critical patent/JP2541230B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To improve the uniformity of saturation drain current and mutual conductance, and reduce the resistance between gate and source, by forming an active layer by ion implantation applying organic metal vapor growth method to the forming of a N-type high concentration impurity layer. CONSTITUTION:An N-type active layer 2 is formed by using an oxide silicon film 4 as a mask, and ion-implanting Si<+> into the surface of a semi-insulative GaAs substrate 1. After contact holes 6a, 6b are formed, and a photoresist mask 5 is eliminated, an Sn doped GaAs layer 100nm long is selectively grown at a growth temperature of 630 deg.C, by organic metal vapor growth method. N<+> type high concentration impurity layers 3a, 3b are formed on both sides of a mask 7. A mask 8, a Ti film 9 and an Al film 10 are formed in order, and a gate electrode 11 is formed. On the N<+> type high concentration impurity layers 3a, 3b, an ohmic metal is vapor-deposited, and a source electrode 12a and a drain electrode 12b are formed.
JP62197490A 1987-08-06 1987-08-06 Method for manufacturing field effect transistor Expired - Lifetime JP2541230B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62197490A JP2541230B2 (en) 1987-08-06 1987-08-06 Method for manufacturing field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62197490A JP2541230B2 (en) 1987-08-06 1987-08-06 Method for manufacturing field effect transistor

Publications (2)

Publication Number Publication Date
JPS6441270A true JPS6441270A (en) 1989-02-13
JP2541230B2 JP2541230B2 (en) 1996-10-09

Family

ID=16375336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62197490A Expired - Lifetime JP2541230B2 (en) 1987-08-06 1987-08-06 Method for manufacturing field effect transistor

Country Status (1)

Country Link
JP (1) JP2541230B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120001854U (en) 2010-07-30 2012-03-12 주식회사 바낙스 Electrically Driven Reel for fishing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236168A (en) * 1985-04-12 1986-10-21 Nec Corp Manufacture of schottky-barrier-gate-type field effect transistor
JPS6260268A (en) * 1985-09-10 1987-03-16 Matsushita Electric Ind Co Ltd Manufacture of field effect transistor
JPS62195178A (en) * 1986-02-21 1987-08-27 Sumitomo Electric Ind Ltd Manufacture of gaas schottky gate field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236168A (en) * 1985-04-12 1986-10-21 Nec Corp Manufacture of schottky-barrier-gate-type field effect transistor
JPS6260268A (en) * 1985-09-10 1987-03-16 Matsushita Electric Ind Co Ltd Manufacture of field effect transistor
JPS62195178A (en) * 1986-02-21 1987-08-27 Sumitomo Electric Ind Ltd Manufacture of gaas schottky gate field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120001854U (en) 2010-07-30 2012-03-12 주식회사 바낙스 Electrically Driven Reel for fishing

Also Published As

Publication number Publication date
JP2541230B2 (en) 1996-10-09

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