JPS5676580A - Lateral field effect transistor and manufacture thereof - Google Patents
Lateral field effect transistor and manufacture thereofInfo
- Publication number
- JPS5676580A JPS5676580A JP15479779A JP15479779A JPS5676580A JP S5676580 A JPS5676580 A JP S5676580A JP 15479779 A JP15479779 A JP 15479779A JP 15479779 A JP15479779 A JP 15479779A JP S5676580 A JPS5676580 A JP S5676580A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- recesses
- electrode
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To increase the withstand voltage of a drain in a field effect transistor by forming recesses at both sides of a gate electrode formed on a main surface and disposing source and drain electrodes in the recesses. CONSTITUTION:An active layer 2 is formed by epitaxial growth on a semi-insulating GaAs substrate 1, and grooves 8 having oblique surfaces 8a are formed by selective etching process. A gate electrode 5 is formed on the projection interposed between the recesses 8, electron flows from the source electrode 3 and source electrode 3 forming the drain electrode 4 are diffused to the side 4a and bottom 4b of the drain electrode 4 on the bottom of the groove 8, thereby realizing the high withstand voltage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15479779A JPS5676580A (en) | 1979-11-28 | 1979-11-28 | Lateral field effect transistor and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15479779A JPS5676580A (en) | 1979-11-28 | 1979-11-28 | Lateral field effect transistor and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5676580A true JPS5676580A (en) | 1981-06-24 |
Family
ID=15592091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15479779A Pending JPS5676580A (en) | 1979-11-28 | 1979-11-28 | Lateral field effect transistor and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5676580A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129696A (en) * | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
-
1979
- 1979-11-28 JP JP15479779A patent/JPS5676580A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129696A (en) * | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
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